 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm * * High DC current gain: hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 40 7 2 0.5 900 150 -55 to 150 Unit V V V A A mW C C JEDEC JEITA TO-92MOD TOSHIBA 2-5J1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SC3225 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 40 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCB = 2 V, IC = 100 mA VCB = 10 V, IB = 0, f = 1 MHz Output 100 Min 40 500 Typ. 0.3 220 20 1.0 Max 10 1 0.5 1.1 V V MHz pF Unit A A V 20 s Input IB2 IB1 IB2 Switching time Storage time tstg 3.0 s VCC = 30 V Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% 1.2 Marking C3225 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3225 IC - VCE 2.4 20 10 5 2 1.2 1 0.8 0.5 IB = 0.2 mA 0 1 2 3 4 5 6 7 Common emitter 1.2 Ta = 25C VCE - IC Common emitter Ta = 25C 1.0 IB = 1 mA 0.8 5 10 20 30 2.0 Collector current IC 1.6 Collector-emitter voltage VCE (V) (A) 0.6 0.4 50 0.4 0.2 0 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector-emitter voltage VCE (V) Collector current IC (A) VCE - IC 1.0 IB = 1 mA 0.8 5 10 20 30 Common emitter Ta = 100C 1.0 IB = 1 mA 0.8 5 VCE - IC Common emitter 10 20 Ta = -55C VCE (V) VCE (V) 30 Collector-emitter voltage 0.6 Collector-emitter voltage 50 0.6 0.4 0.4 50 0.2 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector current IC (A) Collector current IC (A) hFE - IC 5000 3000 Ta = 100C VCE = 1 V VCE (sat) - IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter 5 3 Common emitter IC/IB = 300 DC current gain hFE 1000 500 300 25 -55 1 0.5 0.3 Ta = 100C 0.1 0.05 0.03 0.01 0.03 0.1 0.3 1 3 25 -55 100 50 30 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) 3 2006-11-09 2SC3225 VBE (sat) - IC 5 IC - VBE Common emitter IC/IB = 300 2.0 Common emitter VCE = 1 V Base-emitter saturation voltage VBE (sat) (V) 3 (A) Collector current IC 1 0.5 0.3 Ta = -55C 25 100 1.6 1.2 0.8 0.1 0.01 0.03 0.1 0.3 1 0.4 Ta = 100C 25 -55 Collector current IC (mA) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) PC - Ta 1000 5 3 800 Safe Operating Area IC max (pulsed)* IC max (continuous) 100 ms* 1 s* 10 ms* 1 ms* (mW) Collector power dissipation PC (A) 1 0.5 0.3 DC operation Ta = 25C 600 400 Collector current IC 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. VCEO max 3 10 30 200 0 0 40 80 120 160 200 0.01 0.1 0.3 1 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) 4 2006-11-09 2SC3225 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09 |
Price & Availability of 2SC322506
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |