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| AON3816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON3816/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. AON3816 and AO3816L are electrically identical. -RoHS Compliant -AO3816L is Halogen Free Features VDS (V) = 20V ID = 4A (VGS = 4.5V) RDS(ON) < 22m (VGS = 4.5V) RDS(ON) < 23m (VGS = 4V) RDS(ON) < 28m (VGS = 2.5V) ESD Protected D1 DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 D2 D1 D1 S1 G1 G2 D2 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A F Pulsed Drain Current Power Dissipation A B Symbol VDS VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 10 Sec Steady State Units V V 20 12 4 4 20 2.4 1.5 -55 to 150 1.4 0.9 4 4 A W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t 10s Steady State Steady State RJA RJL Typ 43 80 33 Max 52 90 50 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3816 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250A VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=4A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4V, ID=4A VGS=2.5V, ID=4A gFS VSD IS Forward Transconductance VDS=5V, ID=4A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 12 0.4 20 14 18 15 17 18 23 19 22.5 21 0.75 1 3 1315 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 219 183 2.1 15 VGS=4.5V, VDS=10V, ID=4A 6.7 4.6 1 VGS=5V, VDS=10V, RL=2.5, RGEN=3 2 Min 20 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current 1 5 10 0.75 1.1 22 29 23 28 A A V V A m m m S V A pF pF pF k nC nC nC s s s s DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time 2.8 5.6 5.9 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. The continuous current rating is limited by wire-bonding. Rev 2: Feb 15. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3816 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 4V 20 ID(A) 2.5V ID(A) 10 125C 5 25C 0 0 1 2 3 4 5 VDS(Volts) 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics -40C VGS =2V 15 20 VDS=5V 10 VGS =1.5V c Figure 1: On-Regions Characteristi s 35 30 RDS(ON)(m) 25 20 15 10 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS =4.5V VGS =2.5V VGS =4V Normalize ON-Resistance 1.6 ID=4A 1.4 VGS=2.5V VGS=4V 1.2 VGS=4.5V 1.0 0.8 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 30 ID=4A 1E+01 1E+00 125C 25 RDS(ON)(m) 1E-01 20 125C IS(A) -40C 1E-02 1E-03 15 25C 1E-04 10 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3816 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 VDS=10V 4 VGS(Volts) 3 2 1 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) 2000 1500 1000 500 Crss 0 0 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Ciss 5 ID=4A Coss 100.0 10s Power (W) RDS(ON) limited DC 0.1 TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) 10 100 1ms 10ms 0.1s 1s 10s 100 40 TJ(Max)=150C TA=25C 10.0 ID (Amps) 30 1.0 20 10 0.0 0.01 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 single pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 PD Ton T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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