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GT40Q323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40Q323
Voltage Resonance Inverter Switching Application
* * * * * Enhancement-mode High speed: tf = 0.14 s (typ.) (IC = 40A) FRD included between emitter and collector 4th generation TO-3P (N) (Toshiba package name) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100C @ Tc = 25C @ Tc = 100C @ Tc = 25C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 25 20 39 80 10 80 80 200 150 -55 to 150 Unit V V A A A
JEDEC JEITA TOSHIBA
2-16C1C
W C C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 1.79 Unit C/W C/W
Equivalent Circuit
Collector
Gate Emitter
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GT40Q323
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = -20 A/s Test Condition VGE = 25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 40 A VGG = 15 V, RG = 39 (Note 1) Min 4.0 Typ. 3.0 5550 0.18 0.26 0.14 0.43 0.4 Max 500 5.0 7.0 3.7 0.21 2.1 V s s Unit nA mA V V pF
Note 1: Switching time measurement circuit and input/output waveforms
VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90%
90% 10%
90% 10% tf toff 10% tr ton
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GT40Q323
IC - VCE
80 20 8 10 15 Common emitter Tc = -40 C 80 Common emitter Tc = 25 C
IC - VCE
20 8 10 15
(A)
60
(A) Collector current IC
60
Collector current IC
40
40 7
20
7
20
0 0
VGE = 6 V 2 4 6 8
0 0
VGE = 6 V 2 4 6 8
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
IC - VCE
80 Common emitter Tc = 125 C 20 8 10 15 80 Common emitter VCE = 5 V
IC - VGE
(A)
60
(A)
7
60
Collector current IC
40
Collector current IC
40
Tc = 125C 20 25 -40
20 VGE = 6 V 0 0
2
4
6
8
0 0
2
4
6
8
10
Collector-emitter voltage
VCE (V)
Gate-emitter voltage
VGE (V)
VCE (sat) - Tc
6 Common emitter VGE = 15 V IC = 80 A
Collector-emitter saturation voltage VCE (sat) (V)
5
4
40 20 10
3
2
1
0 -60
-20
20
60
100
140
Case temperature Tc (C)
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GT40Q323
VCE, VGE - QG
400 Common emitter RL = 7.5 Tc = 25C 20 30000 10000
C - VCE
Common emitter VGE = 0 f = 1 MHz Tc = 25C
(V)
VGE (V)
Cies
VCE
Collector-emitter voltage
(pF) Capacitance C
300
15
5000 3000 1000 500 300 100 50 30 10 1 Coes Cres
200 VCE = 300 V 100 200
10
100
5
0 0
80
160
240
0 320
Gate-emitter voltage
10
100
1000
10000
Gate charge QG
(nC)
Collector-emitter voltage
VCE
(V)
Switching time - IC
10 5 3 Common emitter VCC = 600 V RG = 39 VGG = 15 V Tc = 25C toff tf ton 0.1 0.05 0.03 tr 5
Switching time - RG
Common emitter 3 VCC = 600 V IC = 40 A VGG = 15 V Tc = 25C 1 0.5 0.3
toff ton tr tf
Switching time (s)
1 0.5 0.3
Switching time (s)
20 30 40 50
0.1 0.05 0.03
0.01 1
10
0.01 1
10
100
1000
Collector current IC
(A)
Gate resistance
RG
()
Safe operating area
1000 500 300 *Single non-repetitive pulse Tc = 25C Curves must be derated linearly with increases in temperature. 1000 500 300
Reverse bias SOA
Tj 125C VGG = 20 V RG = 10
(A)
Collector current IC
50 30
10 ms* IC max (continuous) 1 ms*
10 s*
Collector current IC
1000 3000
100 IC max (pulsed) *
(A)
100 50 30 10 5 3 1 1
10 5 3 DC operation 100 s*
1 1
3
10
30
100
300
3
10
30
100
300
1000
3000
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
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GT40Q323
101
Rth (t) - tw
Tc = 25C Diode stage
(C/W)
Transient thermal impedance Rth (t)
10
0
IGBT stage
10-1
10-2
10-3 10-5
10-4
10-3
10-2
10-1
100
101
102
Pulse width
tw
(s)
IC max - Tc
40 Common emitter 80 Common collector VGE = 0
IF - VF
-40 25 Tc = 125C
Maximum DC collector current IC max (A)
VGE = 15 V 30
(A) Forward current IF
50 75 100 125 150
60
20
40
10
20
0 25
10 0
1
2
3
4
Case temperature Tc (C)
Forward voltage VF
(V)
trr, lrr - IF
0.8 8 0.5
trr, lrr - di/dt
Common collector IF = 10 A Tc = 25 C trr 40
(A)
(s)
(s)
0.4
32
Reverse recovery current lrr
lrr
0.3
24
0.4
trr
4
0.2
16
0.2 Common collector di/dt = -20 A/s Tc = 25C 0.0 0 10 20 30 40
2
0.1 lrr
8
0 50
0.0 0
40
80
120
160
200
0 240
Forward current IF
(A)
di/dt (A/s)
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Reverse recovery current lrr
0.6
6
trr
Reverse recovery time
Reverse recovery time
trr
(A)
GT40Q323
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-01

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