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GT8G136
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G136
Strobe Flash Applications
* * * Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70(max))/ Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 6 8 150 1.1 0.6 150 -55~150 Unit V V
Collector current Collector power dissipationt10 s Junction temperature Storage temperature range
A W W C C
1,2 3 4 EMITTER EMITTER (Gate drive connection) GATE
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5,6,7,8 COLLECTOR
JEDEC JEITA TOSHIBA Weight: 0.035 g (typ.)

Circuit Configuration 8765
Thermal Characteristics
Characteristics Thermal resistance , junction to ambient (t = 10 s) (Note2a) Thermal resistance , junction to ambient (t = 10 s) (Note2b) Symbol Rth (j-a) (1) Rth (j-a) (2) Rating 114 208 Unit C/W C/W
Marking
(Note 3)
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the Part No. (or abbreviation code) next page.
5 6 7 8
1
2
3
4
8G136
4 3 2 1
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1
2007-04-23
GT8G136
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time tf toff Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = 6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 150 A, VGE = 3 V VCE = 10 V, VGE = 0, f = 1 MHz 3V 0 51 2 Min 0.65 Typ. 1.0 3.5 2500 1.5 1.7 1.6 1.9 Max 10 10 1.35 Unit A A V V pF

300V

s
VIN: tr < 100 ns = tf < 100 ns = < Duty cycle = 1%
Note
Note 1: Please use devices on condition that the junction temperature is below 150C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (unit : mm)
Note 2b : Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit : mm)
for COLLECTOR for EMITTER for GATE
for GATE for COLLECTOR for EMITTER
Note 3: on lower right of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Pb-Free Finish (Only a coating lead terminal) : It is marking about an underline to a week of manufacture mark.
2
2007-04-23
GT8G136
Caution on handling
This device is MOS gate type. Therefore , please care of a protection from ESD in your handling .
Caution in design
You should be design dV/dt value under Icp=150A is below 400 V/s when IGBT turn off under Ta=70 . You should be design to don't flow collector current through terminal number 3 . definition of dv/dt The slope of VCE from 30v to 90v (attached figure.1)
dv/dt = (90V-30V) / (t) = 60V / t
waveform
waveform (expansion)
IC IC(begin) VCE 90V 30V 0V, 0A IC(end) VCE
dv/dt
period
t
Gate drive connection
5,6,7,8
RG
4
RGE
driver
3 1,2
3
2007-04-23
GT8G136
IC - VCE
200 3.5 VGE = 4.0 V 3.0 160 160 200
IC - VCE
VGE = 4.0 V 3.5 3.0
(A)
Collector current IC
120
2.5
Collector current IC
(A)
120
2.5
80
80
40 Common emitter Ta = -10C 0 0 1 2 3 4 5
40 Common emitter Ta = 25C 0 0 1 2 3 4 5
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE (V)
IC - VCE
200 VGE =4.0 V 160 3.5
IC - VGE
Ta = -10C
(A)
(A)
160
3.0
120 25
70
Collector current IC
120
2.5
Collector current IC
80
80
40 Common emitter VCE = 5
40 Common emitter Ta[ = 70C 0 0 1 2 3 4 5
0 0
1
2
3
4
5
Collector-emitter voltage
VCE (V)
Gate-emitter voltage
VGE (V)
C - VCE
10000
VCE, VGE - QG
600 6
VCE (V)
Cies
VGE 400 4
Capacitance C
300
3
100 Cres
Coes
200
100
VCE
Common emitter VCC = 300 V RL = 2.0 Ta = 25C
2
1
10 1
10
100
1000
0 0
10
20
30
40
0 50
Collector-emitter voltage
VCE (V)
Gate charge QG (nC)
4
2007-04-23
Gate-emitter voltage
Common emitter VGE = 0 V f = 1 MHz Ta = 25C
Collector-emitter voltage
1000
VGE (V)
500
5
(pF)
GT8G136
Switching Time - RG
10 Common emitter VCE = 300 V VGE = 3 V IC = 150 A Ta
Switching Time - IC
10
Switching time (s)
ton
Switching time (s)
toff tf 1 ton Common emitter tr VCC = 300 V VGE = 3 V RG = 51 Ta = 25C 50 100 150 200
3 tf toff
tr 1 1 10 100 1000 0.1 0
Gate resistance
RG ()
Collector current IC
(A)
Minimum Gate Drive Area
200 800
Maximum Operating Area
ICP (A)
160
Main capacitance CM (F)
Ta
70
600
Peak collector current
Ta 120
400
80
40
VCM = 350 V 200 Ta < 70C = VGE = 3.0 V < < 33 = RG = 300 0 0 40 80 120 160 200
0 0
2
4
6
8
Gate-emitter voltage
VGE (V)
Peak collector current
ICP
(A)
5
2007-04-23
GT8G136
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2007-04-23

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