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HN7G02FE
TOSHIBA Multichip Discrete Device
HN7G02FE
Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
Q1 (transistor): RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent
Unit: mm
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -50 -50 -5 -100 Unit V V V mA
1. 2. 3. 4. 5. 6.
EMITTER BASE DRAIN SOURCE GATE COLLECTOR
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA
JEDEC JEITA TOSHIBA
2-2N1F
Weight:0.003g (typ.)
Q1, Q2 Common Ratings (Ta = 25C)
Characteristic Power dissipation Junction temperature Storage temperature range Symbol P (Note 1) Tj Tstg Rating 100 150 -55~150 Unit mW C C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating
Marking
Equivalent Circuit (top view)
6 5 4
FT
Q1
Q2
1
2
3
1
2007-11-01
HN7G02FE
Q1 (Transistor) Electrical Characteristics (Ta = 25C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Input resistor Symbol ICBO IEBO hFE VCE (sat) R1 Test Condition VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 mA IC = -5 mA, IB = -0.25 mA Min 120 3.29 Typ. -0.1 4.7 Max -100 -100 400 -0.3 6.11 V k Unit nA nA
Q2 (MOSFET) Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 10 V, VDS = 0 ID = 100 A, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min 20 0.7 25 Typ. 50 4 11.0 3.3 9.3 0.16 0.19 Max 1 1 1.3 12 Unit A V A V mS pF pF pF s
Switching Time Test Circuit
(a) Switching time test circuit 2.5 V IN 50 0 10 S VIN RL ID OUT VDD = 3 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common source Ta = 25C 2.5 V (b) VIN VGS 0 VDD (c) VOUT VDS VDS (ON) ton 90% tr toff tf 90% 10% 10%
VDD
2
2007-11-01
HN7G02FE
Q1 (Transistor)
(mA)
(A)
3
2007-11-01
HN7G02FE
Q2 (MOSFET)
4
2007-11-01
HN7G02FE
Q2 (MOSFET)
5
2007-11-01
HN7G02FE
Q1, Q2 Common
P* - Ta
200
(mW) POWER DISSIPATION PC
150
100
50
0 0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Ta (C)
*:Total rating
6
2007-11-01
HN7G02FE
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
7
2007-11-01

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