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IMAGE SENSOR
CCD area image sensor
S8984, S8985-02
Front-illuminated FFT-CCDs for X-ray imaging
S8984 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8984 has about 2 mega (1700 x 1200) pixels each of which is 20 x 20 m. The fiber optic plate (FOP) used as an input window is as thin as 1.5 mm but highly resistant to X-ray irradiation, making S8984 very reliable even over a long-term operation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high resolution (20 Lp/mm). S8985-02 is an easy-to-use X-ray imaging module using S8984, with added functions such as a cable assembly and X-ray trigger circuit. S898502 is pin compatible with S8981-02 (number of pixels is increased). S8985-02 is advanced type of S8985 and adapted both AC and DC X-ray sources.
Features
Applications
For use under 100,000 shots (60 kVp, 30 mR X-ray irradiation) l Resolution: 20 Lp/mm l 1700 (H) x 1200 (V) pixel format l Pixel size: 20 x 20 m l Coupled with FOS for X-ray imaging l 100 % fill factor l Low dark signal l Low readout noise l MPP operation l AC/DC X-ray source adapted
l Sensor has X-ray monitoring photodiode l Compactness 5.1 mm thickness excluding I/O connector part l High dynamic range: 12 bit l Long-term stability
l General X-ray imaging l Non-destructive inspection l Intra-oral X-ray imaging in dental diagnosis
s Selection guide
Type No. S8984 S8985-02 Cooling Non-cooled Number of total pixels 1708 x 1202 Number of active pixels 1700 x 1200 Active area [mm (H) x mm (V)] 34 x 24
s General ratings
Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Dimensional outline Reliability Window Other S8985-02 Full frame transfer 100 % 1700 (H) x 1200 (V) 20 (H) x 20 (V) m 34 (H) x 24 (V) mm 2 phase 2 phase Emitter follower without load resistance 39.5 (H) x 27.5 (V) mm 42.6 (H) x 30.6 (V) mm 100,000 shots at 60 kVp, 30 m Roentgen Scintillator on 1.5 mm FOP MPP mode (low dark current operation), module (S8985-02) S8984
1
CCD area image sensor
s Absolute maximum ratings (Ta=25 C)
Parameter Storage temperature Operating temperature OD voltage RD voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Vcc voltage Symbol Tstg Topr VOD VRD VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Vcc Min. -20 0 -0.5 -0.5 -15 -15 -15 -15 -15 -15 0 Typ. -
S8984, S8985-02
Max. +70 +40 +20 +18 +15 +15 +15 +15 +15 +15 +7 Unit C C V V V V V V V V V
s Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage +5 V power supply voltage Symbol VOD VRD VOG Vss VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VsGH VsGL VRGH VRGL VTGH VTGL Vcc Min. 12 12 -0.5 0 -9 0 -9 0 -9 0 -9 0 -9 4.75 Typ. 15 13 2 0 3 -8 3 -8 3 -8 3 -8 3 -8 5 Max. 14 5 6 -7 6 -7 6 -7 6 -7 6 -7 5.25 Unit V V V V V V V V V V V V V V V
High Low High Low High Low High Low High Low
s Electrical characteristics (Ta=25 C)
Parameter Symbol Remark Min. Typ. Max. Signal output frequency fc *1 1 5 Vertical shift register capacitance CP1v, CP2v 70,000 S8984 400 Horizontal shift CP1H, CP2H register capacitance 600 S8985-02 S8984 20 Summing gate capacitance CsG S8985-02 220 S8984 20 Reset gate capacitance CRG S8985-02 220 S8984 250 Transfer gate capacitance CTG S8985-02 450 Charge transfer efficiency CTE *2 0.99995 0.99998 DC output level VOut *3 5 8 11 Output impedance Zo *3 500 Power dissipation P *3 *4 75 S8984 1 +5 V power supply current Icc S8985-02 2 *1: S8984 only. In case of S8985-02, maximum frequency is strongly depend on peripheral circuit and cable length. *2: Measured at half of the full well capacity. CTE is defined per pixel. *3: VOD=15 V *4: Power dissipation of the on-chip amplifier. Unit MHz pF pF pF pF pF V mW mA
2
CCD area image sensor
S8984, S8985-02
Unit keV/ee /pixel/s e-rms %
-
s Electrical and optical characteristics (Ta=25 C, unless otherwise noted, VOD=15 V)
Parameter Symbol Remark Min. Typ. Max. Vertical 100 200 Full well capacity Horizontal Fw 300 Summing 600 CCD node sensitivity Sv *5 1.0 1.4 Dark current (MPP mode) DS *6 250 2,500 Readout noise Nr *7 60 Dynamic range DR *8 3,333 X-ray response non-uniformity XRNU *9, *10 10 30 White spots 20 Point defects *12 Black spots 20 11 Blemish * Cluster defects *13 3 Column defects *14 1 X-ray resolution *9 15 20 R *5: VOD=15 V, RL(load resistance of emitter follower)=1 k. *6: Dark signal doubles for every 5 to 7 C. *7: -40 C, operating frequency is 1 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity. *10: XRNU (%) = Noise / Signal x 100 Noise: Fixed pattern noise (peak to peak) In the range that excludes 5 pixels from edges to the center at every position. *11: Refer to "Characteristics and use of FFT-CCD area image sensor" of technical information. *12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *13: continuous 2 to 9 point defects. *14: continuous > 10 point defects.
Lp/mm
s Device structure
1 2 3 ...... 1198 1199 1200 2 3
P1V' P2V' TG' SS
OS OD RD RG' OG SG' P1H' P2H'
......
D1 D2 S1 S2 S3 S4 S5 S6
......
PD
KMPDC0220EA
s Pixel format
Blank 2 Optical black 2 Left Horizontal Direction Effective 1700 Right Optical black 0 Blank 2 Isolation 1 Isolation 1
S1699 1696 1697 S1700 1698 S1701 S1702 1699 1700 S1703 S1704 D3 VS1 VS2 VS3 VS4 D4
X-RAY IRRADIATION MONITORING PHOTODIODE
Top Vertical direction Bottom Isolation Effective Isolation 1 1200 1
VS1199 VS1201 VS1200 VS1202
3
CCD area image sensor
s On-board circuit
OD 51 k 2.2
S8984, S8985-02
7.5 k 10 P1V 10 P2V 10 TG 10 P1H 10 P2H 10 SG 100 RG GND RG' SS PD Trigger A (S8984) SG' P2H' OS Vcc TG' CCD CHIP P1H' 2.2 P2V' RD OD P1V' OG
0.1
RD molex 52745-1417 Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V 1 2 3 4 5 6 7 8 9 10 11 12 13 14
KMPDC0216EB
10 k
OUT
Trigger B (S8985-02)
s Timing chart
PRE-INTEGRATION PERIOD AC X-RAY EXPOSURE (Trigger A) *15 DC X-RAY EXPOSURE (Trigger A) *15 Trigger B (S8985-02) *16 P1V VD1 INTEGRATION PERIOD READOUT PERIOD
Tpwv VD: VERTICAL DUMMY 1 2, 3, ... , 1199, 1200, VD2
P2V, TG *
17
P1H P2H, SG RG OUT Tovr P2V, TG Tpwh, Tpws ENLARGED VIEW
P1H P2H, SG RG OUT D1 D2 S2, S3, S4, ... , S1702, S1703, S1704 S1 D3 D4 Tpwr
*15: Trigger A (S8984) is the same as AC/DC X-ray exposure form. *16: Low active trigger pulse *17: TG terminal can be short-circuited to P2V terminal.
KMPDC0217EA
KMPDC0217EA
Parameter Symbol Remark Pulse width tpwv *18 P1V, P2V, TG Rise and fall time tprv, tpfv Pulse width tpwh P1H, P2H Rise and fall time tprh, tpfh *18 Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1H Overlap time tovr *18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
Min. 30 200 100 5 100 3 10 3 18
Typ. 60 500 50 500 50 50 36
Max. -
Unit s ns ns ns % ns ns % ns ns s
4
CCD area image sensor
s Dimensional outlines (unit: mm) S8984
39.5 0.5 3.0 C1.0 3.6 FOP 35.5 34.0 1.0 1.9 0.55 ACTIVE AREA
S8984, S8985-02
SCINTILLATOR
14
molex 52745-1417
6.55
27.5 0.4
1
FOP 26.4
24.0
24
CONNECTOR
0.55
26.5
FOP CCD CHIP
ALUMINA SUBSTRATE Cu-W (0.5 t)
3.1 0.3
1.5
1.0
2.0
FOP 1.5
KMPDA0175EB
s Pin connections (Connector on CCD package)
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V Description Analog power +5 V Trigger A output Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Reset gate Reset drain Output transistor drain Signal output Ground Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 Remark
Should be opened
5
CCD area image sensor
s Dimensional outlines (unit: mm) S8985-02 q Entire view
MDR CONNECTOR (3M 10136-3000PE; 36 TERMINALS) FERRITE
S8984, S8985-02
CCD SENSOR CABLE
2000
PIN No.1 2
17 18
19 20
35 36
SHROUD
KMPDA0189EA
* The shield of cable and the shroud of MDR connector are electrically connected each other. They are short-circuited, so there is no electrical contact to any other positions.
q CCD sensor
42.6 13.05 29.55 10.55 4.0 10.2 7.4 5.1
3.3
30.6
24.0
3.5 3.45 34.0 5.15 1.3 R2.0 R2.0
3.5
CABLE 3.3
(4 x) R2.5
ACTIVE AREA
6.0
1.0 4.0 1.3 5.0
5.1 2.3
8.9
1.5
(30)
9.0
KMPDA0192EA KMPDA0192EA
6
CCD area image sensor
s Pin connections
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol GND Vcc SG Trigger B RG NC NC RD NC OD NC OUT NC GND NC P1V Reserve Reserve P2H NC P1H NC GND NC RD NC OD NC GND NC OUT NC P2V NC TG Description Ground +5 V power supply Summing gate Trigger B output Reset gate
S8984, S8985-02
Remark
Same timing as P2H
Should be opened Reset drain Output transistor drain Sensor output Ground CCD vertical register clock-1 Should be opened Should be opened CCD horizontal register clock-2 CCD horizontal register clock-1 Ground Reset drain Output transistor drain Ground Sensor output CCD vertical register clock-2 Transfer gate Same timing as P2V
s Precautions for use (Electrostatic countermeasures)
*Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. *Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. *Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. *Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1085E02 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Sept. 2006 DN
7

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