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| SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications * * 2.0V drive Low on-resistance: Ron = 449m (max) (@VGS = -2.0 V) Ron = 249m (max) (@VGS = -2.5 V) Ron = 169m (max) (@VGS = -4.0 V) 0.650.05 2.10.1 1.70.1 +0.1 0.3 -0.05 3 0.1660.05 Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating -20 12 -1.7 -3.4 800 500 150 -55~150 Unit V V A mW C C 2.00.1 1 2 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2 ) Note: UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Test Conditions ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +12V VDS = -20 V, VGS = 0 VGS = 12V, VDS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID =- 0.65 A ID = -0.65 A, VGS = -4.0 V Drain-Source on-resistance ID = -0.65 A, VGS = -2.5 V ID = -0.65 A, VGS = -2.0 V Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Ciss Coss Crss ton toff VDSF (Note3) (Note3) (Note3) (Note3) Min -20 -8 -0.5 1.3 (Note3) Typ. 2.7 129 189 249 370 116 73 33 47 0.77 Max -1 1 -1.1 169 249 449 1.2 pF pF pF ns V m Unit V A A V S VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, ID = -0.65 A, VGS = 0~-2.5 V, RG = 4.7 ID = 1.7 A, VGS = 0 V Drain-Source forward voltage Note3: Pulse test 0.70.05 1: Gate 2: Source 3: Drain 1 2007-11-01 SSM3J113TU Switching Time Test Circuit (a) Test circuit 0 IN RG RL VDD -2.5 V 90% OUT (b) VIN 0V 10% -2.5V 10 s (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = -10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C VDD Marking 3 Equivalent Circuit (top view) 3 JJ6 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-0.1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Take this into consideration when using the device. Handling Precaution When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2007-11-01 SSM3J113TU + ID - VDS -3.0 -10 -2.5 -4.0 -2.5 Common Source Ta = 25C -1000 -10000 Common Source VDS = -3 V 100C -100 Ta = 25C -10 ID - VGS -2.0 -2.0 -1.8 -1.5 Drain current ID (mA) Drain current ID (A) -1.0 -1.6 VGS = -1.4 V -1 -25C -0.5 -0.1 0 0 -0.5 -1.0 -1.5 -2.0 -0.01 0 -0.5 -1.0 -1.5 -2.0 -2.5 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) - ID 1.0 Common Source Ta = 25C 0.8 0.8 1.0 RDS (ON) - VGS Common Source ID = -0.65 A Ta = 25C Drain-Source on resistance RDS (ON) () Drain-Source on resistance RDS (ON) () -3.0 0.6 VGS = -2 V 0.4 -2.5 0.2 -4 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.6 0.4 0.2 0 0 -2 -4 -6 -8 -10 -12 Drain current ID (A) Gate-Source voltage VGS (V) |Yfs| - ID RDS (ON) - Ta 0.5 Common Source 0.4 VGS = -2 V ID = -0.65 A 10 Drain-Source on resistance RDS (ON) () Forward transfer admittance |Yfs| (S) 1 0.3 -2.5 0.2 -4 0.1 0.1 Common Source VDS = -3 V Ta = 25C 0 -25 0 25 50 75 100 125 150 0.01 -0.01 -0.1 -1 -10 Ambient temperature Ta (C) Drain current ID (A) 3 2007-11-01 SSM3J113TU Vth - Ta -1.0 Common Source 600 C - VDS Common Source 500 VGS = 0 f = 1 MHz Ta = 25C 400 Ciss Vth (V) -0.8 VDS = -3 V ID = -0.1 mA Gate threshold voltage Capacitance C -0.6 (pF) -0.4 300 200 Coss 100 Crss -0.2 0 -25 0 25 50 75 100 125 150 0 0 -4 -8 -12 -16 -20 Ambient temperature Ta (C) Drain-Source voltage VDS (V) t - ID 1000 -2.0 Common Source VGS = 0 -1.5 Ta = 25C IDR - VDS Drain reverse current IDR (A) D IDR S Switching time t (ns) 100 toff tf ton 10 tr Common Source VDD = -10 V VGS = 0~-2.5 V Ta = 25C 1 -0.01 RG = 4.7 -0.1 -1 -10 G -1.0 -0.5 0 0 0.5 1 Drain-Source voltage VDS (V) Drain current ID (A) Dynamic Input Characteristic -10 1000 ID = -1.3 A Ta = 25C VDD = -16 V PD - Ta a: mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm b:mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm Drain power dissipation PD(mW) Common Source -10 V VGS (V) -8 800 600 b Gate-Source voltage -6 a -4 400 200 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta(C) -2 0 0 2 4 6 8 Total gate charge Qg (nC) 4 2007-11-01 SSM3J113TU Rth - tw 1000 Transient thermal impedance Rth(C/W) c b a Single pulse a:Mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm b:Mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm c:Mounted on FR4 Board (25.4mmx25.4mmx1.6mm) Cu Pad :0.45mmx0.8mmx3 100 10 1 0.001 0.01 0.1 1 10 Pulse w idth tw (S) 100 1000 5 2007-11-01 SSM3J113TU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01 |
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