 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications * * 1.5 V drive Low ON-resistance: Ron = 353 m (max) (@VGS = -1.5 V) Ron = 193 m (max) (@VGS = -1.8 V) Ron = 125 m (max) (@VGS = -2.5 V) Ron = 98 m (max) (@VGS = -4.0 V) 2.00.1 2.10.1 1.70.1 0.650.05 +0.1 0.3 -0.05 3 0.1660.05 Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating -20 8 -2.2 -4.4 800 500 150 -55~150 Unit V V 1 2 mW C C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm ) Note: 1: Gate 2: Source UFM 3: Drain JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs Test Conditions ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +8 V VDS = -20 V, VGS = 0 VGS = 8 V, VDS = 0 VDS = -3 V, ID = -1 mA VDS = -3 V, ID = - 0.9 A ID = -1.0 A, VGS = -4.0 V RDS (ON) ID = -1.0 A, VGS = -2.5 V ID = -1.0 A, VGS = -1.8 V ID = -0.1 A, VGS = -1.5 V (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) 0.70.05 Min -20 -12 -0.3 2.7 (Note 3) A Typ. 5.4 77 84 111 126 568 75 67 29 39 0.8 Max -10 1 -1.0 98 125 193 353 1.2 Unit V A A V S m Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Ciss Coss Crss ton toff VDSF VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, ID = -0.9 A, VGS = 0~-2.5 V, RG = 4.7 ID = 2.2 A, VGS = 0 V pF pF pF ns V Drain-source forward voltage Note 3: Pulse test 1 2007-11-01 SSM3J115TU Switching Time Test Circuit (a) Test circuit 0 IN RG RL VDD -2.5 V 90% OUT (b) VIN 0V 10% -2.5V 10 s (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = -10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C VDD Marking 3 Equivalent Circuit (top view) 3 JJ8 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3J115TU -4 -4V -3.5 ID - VDS -10000 -1.5V -1000 Common Source VDS = -3 V ID - VGS -3 -2.5 -2 -1.5 -1 -0.5 0 -2.5V -1.8V (mA) (A) ID -100 Ta = 85C -10 25C -1 -25C Drain current VGS=-1.2V Drain current -2 ID -0.1 Common Source Ta = 25C 0 -0.5 -1 -1.5 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Drain -source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) - VGS 400 ID = -0.1 A Common Source 400 RDS (ON) - VGS ID = -1.0 A Common Source Drain-source ON-resistance RDS (ON) (m) 300 Drain-source ON-resistance RDS (ON) (m) 300 200 25C 100 Ta = 85C 200 25C Ta = 85C 100 -25C 0 0 -2 -4 -6 -8 0 0 -2 -4 -6 -25C -8 Gate -source voltage VGS (V) Gate -source voltage VGS (V) RDS (ON) - ID 450 Common Source 400 Ta = 25C 500 Common Source RDS (ON) - Ta Drain-source -resistance RDS (ON) (m) 350 300 250 -1.5V 200 150 100 -2.5V 50 0 -1.8V Drain-source ON-resistance RDS (ON) (m) 400 300 -1A / -1.8 V 200 ID =-0.1A / VGS = -1.5 V 100 -1A / -2.5 V 0 -50 0 -1 -2 -3 -4 0 50 100 150 Drain current ID (A) Ambient temperature Ta (C) 3 2007-11-01 SSM3J115TU Vth - Ta Common Source |Yfs| - ID (S) 30 Common Source 10 3 1 0.3 0.1 VDS = -3 V Ta = 25C VDS = -3 V ID = -1 mA -0.8 Vth (V) -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -25 0 25 50 75 Forward transfer admittance Gate threshold voltage Yfs -0.7 0.03 0.01 1 100 125 150 -10 -100 -1000 -10000 Ambient temperature Ta (C) Drain current ID (mA) 5000 3000 C - VDS -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 Dynamic Input Characteristic (pF) C 500 300 Ciss VGS 1000 (V) 100 50 30 Common Source Ta = 25C f = 1 MHz VGS = 0 V -1 -10 Coss Crss Gate-source voltage VDD = -16 V Capacitance 10 -0.1 Common Source ID = -1.2 A Ta = 25C 5 10 15 20 25 -100 Drain -source voltage VDS (V) Total gate charge Qg (nC) t - ID 1000 -2 Common Source VGS = 0 V Ta = 25C -1.5 IDR - VDS toff (A) (ns) D IDR S 100 tf t IDR Drain reverse current Switching time G -1 ton 10 Common Source tr VDD = -10 V VGS = 0-2.5 V Ta = 25C RG = 4.7 0.1 1 10 -0.5 1 0.01 0 0 0.2 0.4 0.6 0.8 1 1.2 Drain current ID (A) Drain- source voltage VDS (V) 4 2007-11-01 SSM3J115TU 1000 Drain power dissipation PD(mW) 800 600 a b PD - Ta Transient thermal impedance Rth(C/W) a: mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm b:mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm Rth - tw 1000 c b a Single pulse a:Mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm b:Mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm c:Mounted on FR4 Board (25.4mmx25.4mmx1.6mm) Cu Pad :0.45mmx0.8mmx3 100 400 200 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta(C) 10 1 0.001 0.01 0.1 1 10 Pulse w idth tw (S) 100 1000 5 2007-11-01 SSM3J115TU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01 |
Price & Availability of SSM3J115TU
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |