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| SSM3J120TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J120TU Power Management Switch Applications High-Current Switching Applications * * 1.5 V drive Low on-resistance Ron = 140 m (max) (@VGS = -1.5 V) Ron = 78 m (max) (@VGS = -1.8 V) Ron = 49 m (max) (@VGS = -2.5 V) Ron = 38 m (max) (@VGS = -4.0 V) 2.10.1 1.70.1 0.650.05 +0.1 0.3 -0.05 3 0.1660.05 Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating -20 8 -4.0 -8.0 800 500 150 -55~150 Unit V 2.00.1 1 2 A Drain power dissipation Channel temperature Storage temperature mW C C 0.70.05 V UFM 1. Gate 2. Source 3. Drain Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2U1A operating temperature/current/voltage, etc.) are within the Weight: 6.6mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : Mounted on ceramic board (25.4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm2) Note 2 : Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2) Note: Electrical Characteristics (Ta = 25C) Characteristics Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol Test Condition Min -20 -12 -0.3 (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) 6.1 Typ. 12.1 28 34 47 60 1484 185 169 67 92 Max -10 1 -1.0 38 49 78 140 pF pF pF ns m Unit V A A V S V (BR) DSS ID = -1 mA, VGS = 0 V (BR) DSX ID = -1 mA, VGS = +8 V IDSS IGSS Vth Yfs VDS = -20 V, VGS = 0 VGS = 8 V, VDS = 0 VDS = -3 V, ID = -1 mA VDS = -3 V, ID = -2.0 A ID = -3.0 A, VGS = -4.0 V Drain-Source ON-resistance RDS (ON) ID = -2.0 A, VGS = -2.5 V ID = -1.0 A, VGS = -1.8 V ID = -0.3 A, VGS = -1.5 V Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Ciss Coss Crss ton toff VDS = -10 V, VGS = 0 f = 1 MHz VDD = -10 V, ID = -2.0 A VGS = 0 ~ -2.5 V, RG = 4.7 1 2007-11-01 SSM3J120TU Characteristics Total gate charge Gate-Source charge Gate-Drain charge Drain-Source forward voltage Symbol Qg Qgs Qgd VDSF Test Condition VDS = -16 V, IDS = -4.0 A, VGS = -4.0 V, ID = 4.0 A, VGS = 0 (Note 3) Min Typ. 22.3 14.9 7.3 0.8 Max 1.2 V nC Unit Note 3: Pulse test Switching Time Test Circuit (a) Test Circuit OUT IN -2.5 V RG RL VDD 90% (b) VIN 0V 10% 0 -2.5V 10 s (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = -10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25 C VDD Marking 3 Equivalent Circuit (top view) 3 JJB 1 2 1 2 Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2007-11-01 SSM3J120TU -8 -2.5 V -1.8 V ID - VDS -10000 -1.5 V -1000 Common Source VDS = -3 V ID - VGS (A) -6 (mA) ID Drain current Drain current ID -100 -4 VGS = -1.2 V -2 -10 Ta = 85 C -25 C -1 25 C -0.1 0 Common Source Ta = 25 C 0 -0.5 -1 -1.5 -2 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Drain - Source voltage VDS (V) Gate - Source voltage VGS (V) RDS (ON) - VGS 90 80 ID = -0.3 A 90 80 Common Source RDS (ON) - VGS ID = -2.0 A Common Source Drain - Source on-resistance RDS (ON) (m) 70 60 50 40 30 20 -25 C 10 0 0 -2 -4 -6 -8 25 C Ta = 85 C Drain - Source on-resistance RDS (ON) (m) 70 60 50 25 C 40 Ta = 85 C 30 20 -25 C 10 0 0 -2 -4 -6 -8 Gate - Source voltage VGS (V) Gate - Source voltage VGS (V) RDS (ON) - ID 90 Common Source 80 Ta = 25 C 100 Common Source RDS (ON) - Ta Drain - Source on-resistance RDS (ON) (m) Drain - Source on-resistance RDS (ON) (m) 70 60 50 40 30 20 10 0 -1.8 V -2.5 V -4.0 V VGS = -1.5 V 80 -1.0 A / -1.8 V 60 ID = -0.3 A / VGS = -1.5 V 40 20 -2.0 A / -2.5 V -3.0 A / -4.0 V 0 -2 -4 -6 -8 0 -50 0 50 100 150 Drain current ID (A) Ambient temperature Ta (C) 3 2007-11-01 SSM3J120TU Vth - Ta Common Source |Yfs| - ID (S) 30 Common Source 10 3 1 0.3 0.1 VDS = -3 V Ta = 25 C VDS = -3 V ID = -1 mA -0.8 Vth (V) -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -25 0 25 50 75 Forward transfer admittance Gate threshold voltage Yfs -0.7 0.03 0.01 1 100 125 150 -10 -100 -1000 -10000 Ambient temperature Ta (C) Drain current ID (mA) 5000 3000 C - VDS -10 Dynamic Input Characteristic (pF) Ciss 1000 500 300 (V) VGS Gate-Source voltage -8 C -6 VDD = -16 V -4 Capacitance Coss Crss Common Source Ta = 25 C f = 1 MHz VGS = 0 V -1 -10 -100 100 50 30 -2 10 -0.1 Common Source ID = -4.0 A Ta = 25 C 0 10 20 30 40 50 60 70 0 Drain - Source voltage VDS (V) Total gate charge Qg (nC) t - ID 1000 toff Common Source VDD = -10 V VGS = 0 -2.5 V Ta = 25 C RG = 4.7 -4 Common Source VGS = 0 V Ta = 25 C -3 IDR - VDS (A) (ns) D IDR S 100 t IDR tf ton Drain reverse current Switching time G -2 10 tr -1 1 0.01 0 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 Drain current ID (A) Drain-Source voltage VDS (V) 4 2007-11-01 SSM3J120TU 1000 PD - Ta a: mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm b:mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm b 800 Drain power dissipation PD(mW) 600 a 400 200 0 0 20 40 60 80 100 120 140 160 A mbient temperature Ta(C) Rth - tw 1000 c Transient thermal impedance Rth(C/W) b 100 a Single pulse a:Mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm b:Mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm c:Mounted on FR4 Board (25.4mmx25.4mmx1.6mm) Cu Pad :0.45mmx0.8mmx3 10 1 0.001 0.01 0.1 1 10 Pulse width tw (S) 100 1000 5 2007-11-01 SSM3J120TU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01 |
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