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SSM3K15TE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15TE
High Speed Switching Applications Analog Switch Applications
1.20.05 0.320.05 0.140.05 0.80.05
Unit: mm
* *
Small package
0.45 0.45 1.40.05 0.90.1
Low on resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V)

Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse
Symbol VDS VGSS ID IDP PD Tch Tstg
Rating 30 20 100 200 100 150 -55~150
Unit V V mA mW C C
0.590.05
Absolute Maximum Ratings (Ta = 25C)
TESM JEDEC JEITA
1. Gate 2. Source 3. Drain
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature
-
Note:
TOSHIBA 2-1B1B Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.0022 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
3
Equivalent Circuit
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3K15TE
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 16 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 5 V, ID = 10 mA, VGS = 0~5 V Min 30 0.8 25 Typ. 2.2 4.0 7.8 3.6 8.8 50 180 Max 1 1 1.5 4.0 7.0 Unit A V A V mS pF pF pF ns
Switching Time Test Circuit
(a) Test circuit
5V 0 10 s VDD = 5 V D.U. < 1% = Input: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C Output Input 50 RL VDD 0V 10%
(b) VIN
5V 90%
(c) VOUT
VDD
10% 90% tr ton toff tf
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device.
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ID - VDS
250 Common Source 200 10 4 3 Ta = 25C 100 1000 Common Source VDS = 3 V
ID - VGS
Drain current ID (mA)
Drain current ID (mA)
2.7 150 2.5 100 2.3 50 VGS = 2.1 V 0 0 0.5 1 1.5 2
Ta = 100C 10 25C 1 -25C
0.1
0.01 0
1
2
3
4
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) - ID
10 Common Source Ta = 25C 8 5 6
RDS (ON) - VGS
Common Source ID = 10 mA
Drain-Source on resistance RDS (ON) ()
Drain-Source on resistance RDS (ON) ()
4 Ta = 100C 25C 2 -25C 1
6
VGS = 2.5 V
3
4 4V 2
0 0
40
80
120
160
200
0 0
2
4
6
8
10
Drain current ID (mA)
Gate-source voltage
VGS (V)
RDS (ON) - Ta
8 7 Common Source ID = 10 mA 2 1.8 Common Source ID = 0.1 mA VDS = 3 V
Vth - Ta
Vth (V) Gate threshold voltage
75 100 125 150 VGS = 2.5 V 4V 0 25 50
Drain-Source on resistance RDS (ON) ()
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25
6 5 4 3 2 1 0 -25
0
25
50
75
100
125
150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
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Yfs - ID
1000 Common Source 500 V DS = 3 V 300 Ta = 25C 250 Common Source VGS = 0 V Ta = 25C D 150
IDR - VDS
(mA) Drain reveres current IDR
Forward transfer admittance Yfs (mS)
200
100 50 30
G S
IDR
100
10 5 3
50
1 1
10
100
1000
0 0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
Drain current ID (mA)
Drain-Source voltage
VDS (V)
t - ID
10000 5000 3000 toff 1000 500 300 tf Common Source VDD = 5 V VGS = 0~5 V Ta = 25C 10000 5000 3000
t - ID
Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25C toff 1000 500 300 ton 100 50 30 tr tf
Switching time t (ns)
100 50 30 ton tr
10 0.1
Switching time t (ns)
1 10 100
10 0.1
1
10
100
Drain current ID (mA)
Drain current ID (mA)
C - VDS
100 50 30 Common Source VGS = 0 V f = 1 MHz Ta = 25C 250
PD - Ta
Drain power dissipation PD (mW)
100
200
(pF)
10 5 3 Ciss Coss Crss
Capacitance C
150
100
1 0.5 0.3
50
0.1 0.1
1
10
0 0
20
40
60
80
100
120
140
160
Drain-Source voltage
VDS (V)
Ambient temperature Ta (C)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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