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| TLP631,TLP632 TOSHIBA Photocoupler GaAs IRed & Photo-Transistor TLP631,TLP632 Programmable Controllers AC / DC-Input Module Solid State Relay The TOSHIBA TLP631 and TLP632 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP632 is no-base internal connection for high-EMI environments. * * * * Collector-emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.4 g 11-7A8 Unit in mm Pin Configurations (top view) TLP631 1 2 3 6 5 4 TLP632 1 2 3 6 5 4 1: Anode 2: Cathode 3: N.C. 4: Emitter 5: Collector 6: Base 1: Anode 2: Cathode 3: N.C. 4: Emitter 5: Collector 6: N.C 1 2007-10-01 TLP631,TLP632 Absolute Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 39C) LED Peak forward current (100s pulse, 100pps) Reverse voltage Junction temperature Collector-emitter voltage Collector-base voltage (TLP631) Emitter-collector voltage Detector Emitter-base voltage (TLP631) Collector current Power dissipation Power dissipation derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 1 min., R.H. 60%) Symbol IF IF / C IFP VR Tj VCEO VCBO VECO VEBO IC PC PC / C Tj Tstg Topr Tsol PT PT / C BVS Rating 60 -0.7 1 5 125 55 80 7 7 50 150 -1.5 125 -55~125 -55~100 260 250 -2.5 5000 Unit mA mA / C A V C V V V V mA mW mW / C C C C C mW mW / C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. -25 Typ. 5 16 1 Max. 24 25 10 85 Unit V mA mA C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP631,TLP632 Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Detector Collector-base breakdown voltage (TLP631) Emitter-base breakdown voltage (TLP631) Collector dark current Capacitance collector to emitter Symbol VF IR CT V(BR) CEO V(BR) ECO V(BR) CBO V(BR) EBO ICEO CCE IF = 10 mA VR = 5V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA IC = 0.1 mA IE = 0.1 mA VCE = 24 V VCE = 24 V, Ta = 85C V = 0, f = 1 MHz Test Condition Min. 1.0 55 7 80 7 Typ. 1.15 30 10 2 10 Max. 1.3 10 100 50 Unit V A pF V V V V nA A pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA MIn. 50 100 30 Typ. 60 Max. 600 600 0.4 Unit % Saturated CTR Collector-emitter saturation voltage IC / IF (sat) VCE (sat) % V 3 2007-10-01 TLP631,TLP632 Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 5x10 10 Typ. 0.8 10 14 Max. Unit pF Vrms Vdc 5000 10000 10000 Switching Characteristics (Ta = 25C) Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON ts tOFF tON ts tOFF RL = 1.9 k (Fig.1) RBE = OPEN VCC = 5 V, IF = 16 mA RL = 1.9 k (Fig.1) RBE = 220 k(TLP631) VCC = 5 V, IF = 16 mA VCC = 10 V, IC = 2 mA RL = 100 Test Condition Min. Typ. 2 3 3 3 2 15 25 2 12 20 Max. s s s Unit Fig. 1 Switching time test circuit VCC RL RBE VCE VCE IF tS VCC 4.5V 0.5V tON tOFF IF 4 2007-10-01 TLP631,TLP632 IF - Ta 100 200 PC- Ta 80 160 Allowable forward current IF (mA) 60 Allowable collector power dissipation PC (mW) 0 20 40 60 80 100 120 120 40 80 20 40 0 -20 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (C) Ambient temperature Ta (C) IFP - DR 5000 3000 Pulse width 100s Ta = 25C 100 50 30 1000 500 300 Ta = 25C IF - V F Pulse forward current IFP (mA) (mA) 10 Forward current IF 10-3 10-2 10-1 5 3 1 0.5 0.3 100 50 30 10 3 3 3 3 10 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Duty cycle ratio DR Forward voltage VF (V) VF / Ta - IF -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1000 500 IFP - VFP Pulse forward current IFP (mA) Forward voltage temperature coefficient VF/Ta (mV/C) 300 100 50 30 10 5 3 Pulse width 100s Repetitive frequency = 100 Hz Ta = 25C 0.8 1.2 1.6 2.0 2.4 0.3 1 3 10 30 1 0.4 Forward current IF (mA) Pulse forward voltage VF (V) 5 2007-10-01 TLP631,TLP632 IC - VCE 80 Ta = 25C 30 IC - VCE Ta = 25C 50 mA 25 (mA) 60 50 mA 30 mA 20 mA 40 15 mA 10 mA PC MAX. 20 IF = 5 mA 0 0 (mA) 40 mA 30 mA Collector current IC Collector current IC 20 20 mA 15 10 mA 10 5 mA IF = 2 mA 5 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - IF 100 Sample A 1000 IC/IF - IF Current transfer ratio IC/IF (%) 50 30 500 300 (mA) 10 5 3 1 05 0.3 0.1 0.05 0.03 0.3 Sample B Collector current IC Sample A 100 50 30 Sample B Ta = 25C VCE = 5 V VCE = 0.4 V Ta = 25C VCE = 5 V VCE = 0.4 V 1 3 10 30 100 300 1000 10 0.3 1 3 10 30 100 Forward current IF (mA) Forward current IFmA TLP631 100 Ta = 25C 50 V CE = 5 V 30 50 k 100 k 500 k RBE = I -IF at RBE 300 100 50 30 10 5 3 1 0.5 0.3 TLP631 Ta = 25C IPB - IF IPB (A) (mA) VCB = 0 V VCB = 5 V Collector current IC 10 5 3 1 0.5 IF VCC Base photo current VCB IF A R BE 0.3 0.1 0.1 A 0.3 1 3 10 30 100 300 0.3 1 3 10 30 100 0.1 0.1 Forward current IF (mA) Forward current IF (mA) 6 2007-10-01 TLP631,TLP632 ICEO - Ta 0.20 101 IF = 5 mA IC = 1 mA VCE(sat) - Ta Collector dark current ICEO (A) VCE = 24 V 100 10 V 5V Collector-emitter saturation voltage VCE(sat) (V) 0.16 0.12 10-1 0.08 0.04 10-2 0 -40 10 -3 -20 0 20 40 60 80 100 Ambient temperature Ta (C) 10 -4 0 20 40 60 80 100 120 Ambient temperature Ta (C) 50 TLP631 Switching Time - RL tOFF 30 ts Switching time (s) 10 Ta = 25C IF = 16 mA VCC = 5 V RBE = 220 k 5 3 tON 1 1 3 10 30 100 IC - Ta 100 IF = 25 mA 50 30 10 mA 50 VCE = 5 V Load resistance RL (k) TLP631 Switching Time - RBE tOFF ts mA) 10 5 3 5 mA 30 Collector current IC Switching time (s) 10 Ta = 25C IF = 16 mA VCC = 5 V RL = 1.9 k tON 1 0.5 0.3 1 mA 5 3 0.5 mA 0.1 -20 0 20 40 60 80 100 1 100k 300k 1M 3M Ambient temperature Ta (C) Base-emitter resistance RBE () 7 2007-10-01 TLP631,TLP632 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01 |
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