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| TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features Low threshold -- -2.4V max. High input impedance Low input capacitance -- 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N and P-channel devices General Description These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a widerange of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces -- ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(OFF) tr td(OFF) tF INPUT RGEN D.U.T. Output RL 10% t(ON) td(ON) 0V 90% OUTPUT VDD 90% 10% VDD Thermal Characteristics Package TO-243AA ID continuous (mA) ID pulsed (A) Power Dissipation @ TA = 25OC (W) jc (OC/W) jc (OC/W) IDR (mA) -480 IDRM (A) -480 -2.5 1.6 15 78 -2.5 ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. TP2510 Ordering Information Device TP2510 Package Options TO-243AA (SOT-89) TP2510N8-G Die* TP2510ND BVDSS/BVDGS (V) RDS(ON) () VGS(TH) (max) (V) ID(ON) (min) (A) -100 3.5 -2.4 -1.5 * MIL visual screening available. -G indicates package is RoHS compliant (`Green') Pin Configuration DRAIN Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Value BVDSS BVDGS GATE DRAIN SINK TO-243AA (SOT-89) (Top View) 20V -55C to +150C 300C Product Marking TP5AW W = Code for Week Sealed = "Green" Packaging * Distance of 1.6 mm from case for 10 seconds. Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-243AA (SOT-89) N8 Electrical Characteristics (@25C unless otherwise specified ) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-source breakdown voltage Gate threshold voltage Change in VGS(th) with temperature Gate body leakage Zero gate voltage drain current Min -100 -1.0 -0.4 -1.5 300 - Typ -0.6 -2.5 5.0 2.0 360 80 40 10 300 Max -2.4 5.0 -100 -10 -1.0 7.0 3.5 1.7 125 70 25 10 15 20 15 -1.8 - Units V V mV/ C nA A mA A %/ C mmho pF O O Conditions VGS = 0V, ID = -2.0mA VGS = VDS, ID= -1.0mA VGS = VDS, ID= -1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating, TA = 125C VGS = -5.0V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5.0V, ID = -250mA VGS = -10V, ID = -0.75A VGS = -10V, ID = -0.75A VDS = -25V, ID = -0.75A VGS = 0V, VDS = -25V, f = 1.0 MHz VDD = -25V, ID = -1.0A, RGEN = 25 VGS = 0V, ISD = -1.0A VGS = 0V, ISD = -1.0A ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-state drain current Static drain-to-source ON-State Resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop Reverse recovery time ns V ns Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. 2 TP2510 Typical Performance Curves Output Characteristics -5 -5 Saturation Characteristics -4 -4 ID (amperes) -3 ID (amperes) -3 VGS = -10V -2 -8V -1 -6V -4V -3V 0 VGS = -10V -2 -8V -1 -6V -4V -3V 0 0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 VDS (volts) Transconductance vs. Drain Current 0.5 2.0 VDS (volts) Power Dissipation vs. Ambient Temperature VDS = -25V 0.4 TA = -55C TO-243AA GFS (siemens) PD (watts) 0.3 TA = 25C 1.0 TA = 125C 0.2 0.1 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 1.0 TA (C) Thermal Response Characteristics TO-243AA(pulsed) Thermal Resistance (normalized) 0.8 ID (amperes) -1.0 TO-243AA (DC) 0.6 0.4 -0.1 TA = 25C 0.2 TO-243AA TA = 25C PD = 1.6W -0.01 -0.1 0 -1.0 -10 -100 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 3 TP2510 Typical Performance Curves BVDSS Variation with T emperature 10 1.1 8 On-Resistance vs. Drain Current VGS = -5V VGS = -10V BVDSS (normalized) RDS(ON) (ohms) 6 1.0 4 2 0.9 0 -50 0 50 100 150 0 -0.8 -1.6 -2.4 -3.2 -4.0 Tj (C) Transfer Characteristics -5 1.4 ID (amperes) V(th) and RDS Variation with Temperature 2.0 VDS = -25V -4 1.2 RDS (ON) @ -10V, -0.75A 1.6 ID (amperes) -3 TA = -55C 1.0 1.2 25C -2 0.8 0.8 -1 150C V(th) @ -1mA 0.6 0.4 0 0 0 -2 -4 -6 -8 -10 0.4 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 -10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz -8 150 142 pF VDS = -10V C (picofarads) VGS (volts) -6 100 VDS = -40V -4 CISS 50 COSS 71 pF -2 CRSS 0 0 -10 -20 -30 -40 0 0 1.0 2.0 VDS (volts) QG (nanocoulombs) 4 RDS(ON) (normalized) VGS(th) (normalized) TP2510 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 4 C EH E1 1 L b e 2 3 b1 e1 A Top View Side View Symbol MIN Dimensions (mm) NOM MAX A 1.40 1.60 b 0.44 0.56 b1 0.36 0.48 C 0.35 0.44 D 4.40 4.60 D1 1.62 1.83 E 2.29 2.60 E1 2.13 2.29 e 1.50 BSC e1 3.00 BSC H 3.94 4.25 L 0.89 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP - TP2510 A082307 5 |
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