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FDP12N50 / FDPF12N50 N-Channel MOSFET
June 2007
FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65 Features
* RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A * Low gate charge ( Typ. 22nC) * Low Crss ( Typ. 11pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 165 1.33 -55 to +150 300 -Continuous (TC = 25oC) 11.5 6.9 46 456 11.5 16.7 4.5 42 0.3 FDP12N50 FDPF12N50 500 30 11.5 * 6.9 * 46 * Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP12N50 0.75 0.5 62.5 FDPF12N50 3.0 62.5
o
Units C/W
(c)2007 Fairchild Semiconductor Corporation FDP12N50 / FDPF12N50 Rev. A
1
www.fairchildsemi.com
FDP12N50 / FDPF12N50 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP12N50 FDPF12N50 Device FDP12N50 FDPF12N50 Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.5 1 10 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 6A VDS = 40V, ID = 6A
(Note 4)
3.0 -
0.55 11.5
5.0 0.65 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 11.5A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
985 140 11 22 6 9
1315 190 17 30 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 11.5A RG = 25
(Note 4, 5)
-
24 50 45 30
60 110 100 70
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 11.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 11.5A VGS = 0V, ISD = 11.5A dIF/dt = 100A/s
(Note 4)
-
375 3.5
11.5 46 1.4 -
A A V ns C
FDP12N50 / FDPF12N50 Rev. A
2
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FDP12N50 / FDPF12N50 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30
VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
40
*Notes: 1. VDS = 20V 2. 250s Pulse Test
o
10
ID,Drain Current[A]
ID,Drain Current[A]
10
150 C -55 C 25 C
o o
1
0.1
0.05 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1 VDS,Drain-Source Voltage[V]
10
20
1
5
6 7 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
1.5
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(on) [], Drain-Source On-Resistance
1.0
VGS = 10V
IS, Reverse Drain Current [A]
150 C
o
10
25 C
o
0.5
VGS = 20V
0.0
* Note : TJ = 25 C
o
*Notes: 1. VGS = 0V
0
6
12 18 ID, Drain Current [A]
24
30
1 0.0
2. 250s Pulse Test
0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
2000
Coss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 100V VDS = 250V VDS = 400V
1500
Capacitances [pF]
Ciss
8
*Note: 1. VGS = 0V 2. f = 1MHz
6
1000
4
500
Crss
2
*Note: ID = 11.5A
0 0.1
1 10 VDS, Drain-Source Voltage [V]
30
0
0
4
8 12 16 20 Qg, Total Gate Charge [nC]
24
FDP12N50 / FDPF12N50 Rev. A
3
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FDP12N50 / FDPF12N50 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 6A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9-1. Maximum Safe Operating Area - FDP12N50
100
20s
Figure 9-2. Maximum Safe Operating Area - FDPF12N50
100
20s
ID, Drain Current [A]
10
ID, Drain Current [A]
100s 1ms
10
100s 1ms
1
10ms
Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
1
Operation in This Area is Limited by R DS(on)
10ms
DC
DC
0.1
0.1
* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.01
1
10 100 VDS, Drain-Source Voltage [V]
800
0.01
1
10 100 VDS, Drain-Source Voltage [V]
1000
Figure 10. Maximum Drain Current vs. Case Temperature
14 12
ID, Drain Current [A]
10 8 6 4 2 0 25
50 75 100 125 o TC, Case Temperature [ C]
150
FDP12N50 / FDPF12N50 Rev. A
4
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FDP12N50 / FDPF12N50 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP12N50
3 Thermal Response [ZJC]
1
0.5 0.2 0.1 0.05 0.02 0.01 Single pulse
0.1
PDM t1 t2
o
0.01
*Notes: 1. ZJC(t) = 0.75 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
1E-3 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
Figure 11-2. Transient Thermal Response Curve - FDPF12N50
5 Thermal Response [ZJC]
0.5
1
0.2 0.1 0.05
PDM t1 t2
o
0.1
0.02 0.01 Single pulse
* Notes : 1. ZJC(t) = 3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
0.01 -4 10
10
-3
10 10 10 10 Rectangular Pulse Duration [sec]
-2
-1
0
1
10
2
10
3
FDP12N50 / FDPF12N50 Rev. A
5
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FDP12N50 / FDPF12N50 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP12N50 / FDPF12N50 Rev. A
6
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FDP12N50 / FDPF12N50 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP12N50 / FDPF12N50 Rev. A
7
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FDP12N50 / FDPF12N50 N-Channel MOSFET
www.fairchildsemi.com
FDP12N50 / FDPF12N50 Rev. A
8
FDP12N50 / FDPF12N50 N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20]
4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
FDP12N50 / FDPF12N50 Rev. A
9
15.87 0.20
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I29
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation
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