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PHOTODIODE
InGaAs APD
G8931-04
Time response characteristics compatible with SONET and G/GE-PON
G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET (Synchronous Optical Network), G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
Features
Applications
l High-speed response: 2.5 Gbps l Low dark current l Low capacitance l Active area: 0.04 mm l High sensitivity
s General ratings
Parameter Active area Symbol -
l Optical fiber communications l High-speed data links
Value 0.04
Unit mm
s Absolute maximum ratings
Parameter Forward current Reverse current Operating temperature Storage temperature Symbol IF IR Topr Tstg Value 2 500 -40 to +85 -55 to +125 Unit mA A C C
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Breakdown voltage Temperature coefficient of VBR Dark current Cut-off frequency Terminal capacitance Symbol p S VBR ID fc Ct Condition Min. 0.8 40 3 Typ. 0.9 to 1.7 1.55 0.9 0.11 40 4 0.35 Max. 60 0.16 65 0.45 Unit m m A/W V V/C nA GHz pF
=1.55 m, M=1 ID=100 A -40 to +85 C VR=VBR x 0.9 M=10 VR=VBR x 0.9 f=1 MHz
s Spectral response
1.0 (Typ. Ta=25 C, M=1)
s Dark current vs. reverse voltage
1 mA (Typ. Ta=25 C)
DARK CURRENT, PHOTOCURRENT
100 A PHOTOCURRENT 10 A 1 A 100 nA 10 nA DARK CURRENT 1 nA 100 pA 10 pA 1 pA 0 10 20 30 40 50
PHOTO SENSITIVITY (A/W)
0.8
0.6
0.4
0.2
0 0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
WAVELENGTH (m)
KAPDB0120EA
REVERSE VOLTAGE (V)
KAPDB0123EA
1
InGaAs APD
s Terminal capacitance vs. reverse voltage
3.0 (Typ. Ta=25 C)
G8931-04
s Dimensional outline (unit: mm)
5.4 0.2 4.7 0.1
2.7 0.2 3.7 0.2 13 MIN.
KAPDA0034EA
WINDOW 3.0 0.1
TERMINAL CAPACITANCE (pF)
2.0
PHOTOSENSITIVE SURFACE 0.45 LEAD 2.5 0.2
1.0
0 0 10 20 30 40 50
REVERSE VOLTAGE (V)
KAPDB0124EA
CASE
s Peripheral circuit example of APD
BIAS SUPPLY VOLTAGE (FOR TEMPERATURE COMPENSATION) 1 M MIN. CURRENT LIMITTING RESISTANCE 0.1 F MIN. (AS CLOSE TO APD AS POSSIBLE)
APD
EXCESSIVE VOLTAGE PROTECTIVE CIRCUIT
+ READOUT CIRCUIT HIGH-SPEED OP AMP LH0032, etc.
KAPDC0005EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KAPD1018E02 Jul. 2007 DN

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