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 PHOTODIODE
GaAs PIN photodiode with preamp
G9287-14
ROSA type, 850 nm, 10 Gbps
Features Applications
l 1.25 mm sleeve type ROSA (Receiver Optical Sub-Assembly) l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V l Differential output l Sensitivity: +2 to -14 dBm Typ. (Extinction ratio=4.5 dB) l Trans-impedance: 6 k Typ. *1
l 10 gigabit ethernet l Optical fiber communications
s Absolute maximum ratings (Ta=25 C)
Parameter Supply voltage Reverse voltage (photodiode) Operating temperature Storage temperature Symbol Vcc VR Topr Tstg Value -0.5, +4 7 -20 to +85 -40 to +85 Unit V V C C
s Electrical and optical characteristics (Ta=25 C, 850 nm, Vcc=3.3 5 % V, Vpd=3.13 to 5.0 V, RL=50 *2, unless otherwise noted)
Parameter Responsivity *3 Supply current Cut-off frequency Low cut-off frequency Noise equivalent power *1 Trans-impedance *1 Minimum receivable sensitivity *3 Minimum receivable sensitivity *3 (OMA) Maximum receivable sensitivity Symbol R Icc fc fc-L NEP Tz Pmin Pmin (OMA) Pmax Condition Dark state, RL= -3 dB -3 dB Dark state, DC to 7.5 GHz RL=50 , f=100 MHz Extinction ratio=4.5 dB Extinction 10 Gbps, NRZ, ratio=3 dB PRBS=231-1, Extinction -12 BER=10 ratio=3 dB Extinction ratio=10 dB Dark state, RL= Min. 0.4 6.5 4.5 350 12 Typ. 0.55 30 7.0 20 1.5 6 -14 -10 -12 +2 450 0.05 14 Max. 45 dBm 550 1 mVpp nA dB Unit A/W mA GHz kHz Wrms k
Output amplitude Vomax Dark current ID Optical return loss *3 ORL *1: Single-ended (Vout+) measurement *2: Capacitive coupling *3: Measurement by 50/125 m GI MM fiber
1
GaAs PIN photodiode with preamp
s Bit error rate
10-3 (Typ. Ta=25 C, Bit rate 10 Gbps, PN=31)
G9287-14
s Frequency response
+10 +5 EXTINCTION RATIO=3 dB (Ta=25 C, Vout+, Pin= -15 dBm)
10
-4
RELATIVE SENSITIVITY (dB)
EXTINCTION RATIO=4.5 dB
0 -5 -10 -15 -20 -25 -30
BIT ERROR RATE
10 10 10 10 10
-5
-6
-7 -8 -9
10-10
10-11 10-12 -18 -17 -16 -15 -14 -13 -12 -11 -10
-12 dBm (OMA)
-9
-8
0
2
4
6
8
10
12
14
16
18
20
AVERAGE OPTICAL INPUT POWER (dBm)
KGPDB0058EC
FREQUENCY (GHz)
KGPDB0064EA
s Eye diagram
Bit rate 10 Gbps, PN=31, NRZ, =850 nm, Extinction raito 4.5 dB, Vcc=Vpd=3.3 V, Responsivity=0.55 A/W
s Dimensional outline (unit: mm)
4.88
5.08
2.92
2.72
4.04 0.03
3.38 0.03
( 1.25)
6.66 0.05
3.97
4.17 0.02
(OPTICAL REFERENCE PLANE)
1.27 0.03
(13)
4.64
0.9-0.2
+0.25
(2 x) 2.1 (3 x) 0.5 x 0.2 t
Pin= -13 dBm, 30 mV/div., 20 ps/div.
(5 x) 0.35 0.05
(60)
5.94 0.05
5.4 2.54 0.15 6.6
2.95-0.03
+0.07
(3 x)1.0 5.92 0.2 0.3
PIN No.
VoutVout+ Vcc Vpd GND Tolerance unless otherwise noted: 0.1 KIRDA0176EB
KIRDA0176EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KGPD1012E03 Feb. 2005 DN


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