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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1415-2 TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.5dBm at 14.5GHz to 15.0GHz n HIGH GAIN G1dB=6.0dB at 14.5GHz to 15.0GHz n HERMETICALLY SEALED PACKAGE n BROAD BAND INTERNALLY MATCHED RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency Channel Temperature Rise SYMBOL P1dB G1dB IDS1 CONDITIONS UNIT dBm dB A % C MIN. 32.5 5.0 TYP. MAX. 33.5 6.0 0.85 22 1.1 60 VDS= 9V f= 14.5 to 15.0GHz add Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -30A Channel to Case UNIT mS V A V C/W MIN. -2.0 -5 TYP. 600 -3.5 2.0 5.0 MAX. -5.0 2.6 6.0 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Sep. 2006 TIM1415-2 ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 2.6 25 175 -65 to +175 PACKAGE OUTLINE (2-9D1B) 2.0MIN. 4-R2.4 (1) (2) (2) 2.50.3 (1) Gate (2) Source (3) 0.50.15 0.2MAX 1.20.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 1.80.3 3.2MAX 8.5 MAX. 0.1 -0.05 +0.1 13.00.3 17.0 MAX. 2.0MIN 9.70.3 (3) Drain TIM1415-2 RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=9V 35 IDS0.85A Pin=27.5dBm 34 33 32 31 14.5 14.75 15.0 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 37 freq.=15.0GHz 36 35 34 VDS=9V IDS0.85A 70 Pout 60 50 40 Pout(dBm) 33 32 31 30 29 28 21 23 25 27 29 31 add 30 20 10 0 Pin(dBm) 3 add(%) TIM1415-2 Power Dissipation(PT) vs. Case Temperature(Tc) 25 PT(W) 20 15 10 0 0 40 80 120 160 200 Tc( C ) 4 |
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