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| TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 2.40.1 0.475 1 4 Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor) Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max) (NPN transistor) High-speed switching: tf = 25 ns (typ.) (NPN transistor) 0.65 2.90.1 B A 0.05 M B 0.80.05 S 0.025 S 0.170.02 0.28 +0.1 -0.11 +0.13 Absolute Maximum Ratings (Ta = 25C) Transistor Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (NPN) Junction temperature DC (Note 1) Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note 2) Tj Rating 100 80 50 6 5.0 7.0 0.5 1.0 150 Unit V V V A A W C 1. SOURCE 2. COLLECTOR 3. COLLECTOR 4. COLLECTOR 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 5. BASE 6. EMITTER 7. GATE 8. DRAIN JEDEC JEITA TOSHIBA 2-3V1E Pulse (Note 1) Weight : 0.017g (Typ.) Circuit Configuration 8 7 6 5 MOS FET Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Channel Temperature DC Pulse Symbol VDSS VGSS ID IDP Tch Rating 20 10 100 200 150 Unit V V mA C 1 2 3 4 Note 1: Ensure that the junction (channel) temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (FR-4, 25.4x25.4x1.6 mm, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-13 2.80.1 HIGH-SPEED SWITCHING APPLICATIONS LORD SWITCHING APPLICATIONS STROBE FLASH APPLICATIONS 0.330.05 0.05 M A 8 5 TPCP8H01 Common Absolute Maximum Rating (Ta = 25C) Characteristics Storage temperature range Symbol Tstg Rating -55 to 150 Unit C Marking (Note 4) 8H01 * Type Lot No. (Weekly code) Note 4: The mark " " on the lower left of the marking indicates Pin 1. * Weekly code (three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (Last digit of the of the calendar year) Electrical Characteristics (Ta = 25C) Transistor Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 100 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.6 A IC = 1.6 A, IB = 53 mA IC = 1.6 A, IB = 53 mA VCB = 10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram. VCC 24 V, RL = 15 IB1 = -IB2 = 53 mA Min 50 250 100 Typ. 80 0.8 22 65 500 25 Max 100 100 400 130 1.1 ns mV V pF Unit nA nA V Figure 1 Switching Time Test Circuit & Timing Chart VCC 20 s IB1 IB2 IB2 Duty cycle < 1% IB1 RL Output Input 2 2006-11-13 TPCP8H01 MOS FET Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V(BR)DSS IDSS V th Yfs Test Condition VGS = 10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA , VGS = 4.0 V Drain-Source ON resistance RDS(ON) ID = 10 mA , VGS = 2.5 V ID = 1 mA , VGS = 1.5 V Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Ciss Crss Coss ton toff See Figure 2 circuit diagram. VDD 3 V, RL = 300 VGS = 0 to 2.5 V VDS = 3 V, VGS = 0, f= 1 MHz Min 20 0.6 40 Typ. 1.5 2.2 5.2 9.3 4.5 9.8 70 125 Max 1 1 1.1 3 4 15 ns pF Unit A V A V mS Figure 2 Switching Time Test Circuit & Timing Chart Vout 2.5V 0 10us Vin Rg RL Gate Pulse Width 10s, tr,tf<5ns (Zout=50),Common Source,Ta=25C Duty Cycle<1% VDD Precautions Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. The VGS recommended voltage for turning on this product is 2.5 V or higher. 3 2006-11-13 TPCP8H01 NPN IC - VCE 5 60 50 40 30 Ta = 100C 1000 hFE - IC (A) 4 DC current gain hFE 20 25C -55C 100 Collector current IC 3 10 2 IB = 5 mA 1 Common emitter Ta = 25C Single nonrepetitive pulse 0 0 0.4 0.8 1.2 1.6 2.0 2.4 10 0.001 Common emitter VCE = 2 V Single nonrepetitive pulse 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) - IC 1 VBE (sat) - IC 10 Common emitter = 30 Single nonrepetitive pulse Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) Common emitter = 30 Single nonrepetitive pulse 0.1 Ta = 100C -55C 1 Ta = -55C 100C 25C 25C 0.01 0.001 0.01 0.001 0.01 0.1 1 10 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC - VBE 5 Pc - Ta 1.2 DC operation Ta = 25 C Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 2 mm ) (W) PC -55C Common emitter VCE = 2 V Single nonrepetitive pulse (A) 4 1.0 3 Ta = 100C 2 Collector power dissipation 1.2 Collector current IC 0.8 0.6 0.4 1 25C 0.2 0 0 0.2 0.4 0.6 0.8 1.0 0 0 20 40 60 80 100 120 140 160 Base-emitter voltage VBE (V) Ambient temperature Ta (C) 4 2006-11-13 TPCP8H01 rth (j-c) - tw 1000 Transient thermal resistance rth (j-c) (C/W) 100 10 1 0.001 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 10 IC max (Pulsed) * 10 ms* 1 ms* 100 s* 10 s* IC (A) 100 ms* 10 s* 1 DC operation (Ta = 25C) IC max (Continuous) *: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 0.1 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu 2 area: 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 Collector current 10 Collector-emitter voltage VCE (V) VCEO max 100 5 2006-11-13 TPCP8H01 Nch-MOS ID - VDS 250 Common source Ta = 25C 2.1 1.9 150 12 Common source Ta = 25C RDS (ON) - ID (mA) 200 Drain-source ON resistance RDS (ON) () 10 4 3 2.5 2.3 10 8 VGS = 1.5 V 6 Drain current ID 100 1.7 4 2.5 2 4 50 1.5 VGS = 1.3 V 0 0 0.5 1.0 1.5 2.0 0 1 10 100 1000 Drain-source voltage VDS (V) Drain current ID (mA) RDS (ON) - Ta 8 7 Common source 1000 Common source VDS = 3 V Ta = 25C Yfs - ID Drain-source ON resistance RDS (ON) () 6 5 4 3 2 1 0 -25 VGS = 1.5 V, ID = 1 mA Forward transfer admittance Yfs (S) 125 100 2.5 V, 10 mA 10 4.0 V, 10 mA 0 25 50 75 100 150 1 1 10 100 1000 Ambient temperature Ta (C) Drain current ID (mA) t - ID 10000 Common source VDD = 3 V VGS = 02.5V Ta = 25C 100 Capacitance - VDS Common source VGS = 0 V f = 1 MHz Ta = 25C (ns) 1000 t Switching time Capacitance tf C 10 Ciss Coss 100 ton tr (pF) toff Crss 1 0.1 10 0.1 1 10 100 1 10 100 Drain current ID (mA) Drain-source voltage VDS (V) 6 2006-11-13 TPCP8H01 ID - VGS 1000 Common source VDS = 3 V 8 RDS (ON) - VGS Common source ID = 10 mA ID (mA) 100 Drain-source ON resistance RDS (ON) () 6 10 Ta = 100C -25 Drain current 4 Ta = 100C 2 25 1 25 0.1 -25 4 6 8 10 0.01 0 1 2 3 0 0 2 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Vth - Ta 2.0 IDR - VDS 250 1.6 IDR (mA) Vth (V) Common source ID = 0.1 mA VDS = 3 V Common source VGS = 0 V Ta = 25C 200 Gate threshold voltage Drain reverse current 1.2 150 0.8 100 0.4 50 0 -25 0 25 50 75 100 125 150 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Ambient temperature Ta (C) Drain-source voltage VDS (V) 7 2006-11-13 TPCP8H01 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2006-11-13 |
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