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6MBI100U2B-060
IGBT MODULE (U series) 600V / 100A
IGBT Modules
Features
* Low VCE(sat) * Compact Package * P.C. Board Mount Module
Applications
* Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless otherwise specified)
I Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICP -IC -IC pulse PC Tj Tstg Viso Condition Rating 600 20 100 200 100 200 380 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A
Continuous 1ms
Collector power disspation Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
1 device
AC : 1 minute
W C C V V N*m
*1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done.
IGBT Module
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=100mA Tj=25C VGE=15V Tj=125C Ic=100A Tj=25C Tj=125C VGE=0V, VCE=10V, f=1MHz VCC=300V IC=100A VGE=15V RG= 33 VGE= 0 V IF=100A Tj=25C Tj=125C Tj=25C Tj=125C Min. 6.2 465 3305
6MBI100U2B-060
Inverter
Input capacitance Turn-on time
Turn-off time Forward on voltage
Thermistor
Reverse recovery time Lead resistance, terminal-chip * Resistance B value
IF=100A T=25C T=100C T=25/50C
Characteristics Typ. Max. 1.0 200 6.7 7.7 2.20 2.50 2.35 1.85 2.00 8.4 0.40 1.20 0.22 0.60 0.16 0.48 1.20 0.07 0.45 1.95 2.30 2.00 1.60 1.65 0.35 3.4 5000 495 3375 520 3450
Unit mA nA V V
nF s
V
s m K
* Biggest internal terminal resistance among arm.
Thermal resistance Characteristics
Item Thermal resistance ( 1 device ) Symbol Rth(j-c) Condition Min. IGBT FWD Contact thermal resistance * Rth(c-f) With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Characteristics Typ. Max. 0.05 0.33 0.66 Unit
C/W
Equivalent Circuit Schematic
30,31,32
16,17,18
19
20
1 2 U 27,28,29 3 4 33,34,35
5 6
9 10 V 24,25,26 W 21,22,23
7 8
11 12 13,14,15
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
250 VGE=20V 15V 10V 150 Collector current : Ic [A] 12V 250
6MBI100U2B-060
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
200 Collector current : Ic [A]
200
VGE=20V 15V
12V 10V
150
100
100
50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
50
8V
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
250 Tj=25C Tj=125C Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
10
200 Collector current : Ic [A]
8
150
6
100
4 Ic=200A Ic=100A Ic= 50A
50
2
0 0 1 2 3 4
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
100.0 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [ V ] 500
Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25C
25 [V] Gate - Emitter voltage : VGE
400
20
10.0
Cies
300 VGE 200
15
Cres 1.0 Coes
10
100 VCE
5
0.1 0 10 20 30
0 0 100 200 300 400 500
0
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
IGBT Module
6MBI100U2B-060
Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33, Tj= 25C
10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000
Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33, Tj=125C
1000
toff
1000
ton toff tr
ton 100
tr tf
100
tf
10 0 50 100 150 200 Collector current : Ic [ A ]
10 0 50 100 150 200 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 25C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10
Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33
8
Eon(125C) Eoff(125C) Eon(25C)
1000 toff ton 100
tr
6
tf
4 Eoff(25C) 2 Err(125C) 0 Err(25C) 0 50 100 150 200
10 10.0 100.0 Gate resistance : Rg [ ] 1000.0
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 125C
15 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 250
Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 33 ,Tj <= 125C
Eon 10 Collector current : Ic [ A ] 1000.0
200
150
5
Eoff
100
50 Err 10.0 100.0 Gate resistance : Rg [ ]
0
0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ]
IGBT Module
6MBI100U2B-060
Forward current vs. Forward on voltage (typ.) chip
250 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1000
Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=33
Forward current : IF [ A ]
200 Tj=25C 150 Tj=125C
100 Irr (125C)
Irr (125C) Irr (25C)
100
50
Irr (25C) 10
0 0 1 2 3 Forward on voltage : VF [ V ]
0
50
100
150
200
Forward current : IF [ A ]
Transient thermal resistance (max.)
10.00 Thermal resistanse : Rth(j-c) [ C/W ] 100
Temperature characteristic (typ.)
1.00
Resistance : R [ k ] 1.000
FWD IGBT
10
0.10
1
0.01 0.001
0.1 0.010 0.100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Pulse width : Pw [ sec ]
Temperature [C ]
IGBT Module
Outline Drawings, mm
6MBI100U2B-060
(
) shows reference dimension.

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