View TLN231F_4132260.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TLN231(F)
TOSHIBA Infrared LED GaAAs Infrared Emitter
TLN231(F)
Lead(Pb)-Free Infrared LED for Space-Optical-Transmission
* * * * * High radiant intensity: 60 mW/sr (typ.) at IF = 50 mA Half-angle value: 1/2 = 16 (typ.) A light source for remote control Wireless AV-signal transmission purpose High speed data transmission purpose Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Forward current Pulse forward current Power dissipation Reverse voltage Operating temperature range Storage temperature range Soldering temperature (5 s, Note 2) Symbol IF IFP PD VR Topr Tstg Tsol Rating 100 1000 (Note 1) 200 4 -25~85 -30~100 260 Unit mA mA mW V C C C
TOSHIBA
4-6B6
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Pin Connection temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. 1. Anode operating temperature/current/voltage, etc.) are within the 1 2 2. Cathode absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: f = 100 kHz, duty = 1% Note 2: Soldering must be performed under the stopper.
1
2007-10-01
TLN231(F)
Optical and Electrical Characteristics (Ta = 25C)
Characteristics Forward voltage Reverse current Radiant intensity Radiant power Cut-off frequency Peak emission wavelength Half-angle value Symbol VF IR IE PO fc P
1 2
Test Condition IF = 100 mA VR = 4 V IF = 50 mA IF = 50 mA IF = 50 mA + 5 mAP-P IF = 50 mA IF = 50 mA (Note 3)
Min 35
Typ. 1.6 60 30 15 870 16
Max 2.0 60
Unit V A mW/sr mW MHz nm
Note 3: Frequency when modulation light power decreases by 3dB from 1 MHz.
Handling Precautions
* * * Soldering must be performed under the stopper. When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the leads have been formed. The radiant intensity decrease over time due to current flowing in the infrared LED. When designing circuits, the device must take into account the change in radiant intensity over time. The change in radiant intensity is equal to the reciprocal of the change in LED infrared optical output. IE (t) P o (t) = IE (0) P o (0)
2
2007-10-01
TLN231(F)
IF - Ta
120 100 75C 100
IF - V F
(typ.)
IF (mA)
(mA)
-25C 10 85C 0C Ta = 25C
Allowable forward current
80
60
Forward current IF
1
50C
40
0.1
20
0 0
20
40
60
80
100
0.01 0.8
1
1.2
1.4
1.6
1.8
2
Ambient temperature Ta (C)
Forward voltage VF
(V)
VF - Ta
1.8 1.7
(typ.)
1000
IFP - VFP
(typ.)
Pulse forward current IFP (mA)
(V)
100 mA 1.6 1.5 1.4 1.3 1.2 1.1 1 -50 IF = 10 mA 70 mA 50 mA 30 mA
300
Forward voltage VF
100
30
10 Pulse width < 100 s = Repetitive frequency = 100 Hz Ta = 25C
3
-25
0
25
50
75
100
1 0
1
2
3
4
5
Ambient temperature Ta (C)
Pulse forward voltage
VFP (V)
IFP - Pw
10000 1.2 Ta = 25C 3000 f = 100 Hz 200 Hz 300 500 Hz 1 kHz 2 kHz 100 5 kHz 10 kHz 30 1.0
Relative IE - IFP
Pulse width = 1 ms Duty = 10% Ta = 25C
Allowable pulse forward current IFP (mA)
1000
Relative radiant intensity
10000
0.8
0.6
0.4
0.2
10 1
10
100
1000
0 0
200
400
600
800
1000
1200
Pulse width
Pw
(s)
Pulse forward current IFP (mA)
3
2007-10-01
TLN231(F)
Wavelength characteristic
1 IF = 50 mA 0.8 10 IF = 50 mA
Relative IE - Ta
(typ.)
0.6
Relative radiant intensity
Relative power intensity
3
1
0.4
0.2
0.3
0 700
740
780
820
860
900
940
980
0.1 -50
-25
0
25
50
75
100
Wavelength (nm)
Ambient temperature Ta (C)
Radiation pattern
(typ.)
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50 60 70 80 90 1.0
0
0.2
0.4
0.6
0.8
Relative radiant power
4
2007-10-01
TLN231(F)
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
5
2007-10-01

▲Up To Search▲

Price & Availability of TLN231F

	To Download TLN231F Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .