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TSM4410
Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain
Preliminary
N-Channel Enhancement Mode MOSFET
VDS = 25V ID = 10A RDS (on), Vgs @ 10V, Ids @ 10A = 13.5m RDS (on), Vgs @ 4.5V, Ids @ 8A = 20m
Features
Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current

Block Diagram
Ordering Information
Part No. TSM4410CS Packing Package SOP-8
Tape & Reel (2,500pcs / Reel)
Absolute Maximum Rating (TA = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C
o o
Symbol
VDS VGS ID IDM PD TJ TJ, TSTG
Limit
25 20 10 50 2 1.3 +150 -55 to +150
Unit
V V A
W
o o
C C
Thermal Performance
Parameter
Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2 2. 1-in 2oz Cu PCB board
Symbol
Rjc Rja
Limit
2.2 50
Unit
o
C/W
TSM4410
1-3
2006/06 rev. A
Electrical Characteristics
TJ = 25 C, unless otherwise noted
o
Parameter Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance
Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0V, ID = 250uA VGS = 10V, ID = 10A VGS = 4.5V, ID = 5A VDS = VGS, ID = 250uA VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V f = 1MHz VDS =15V, ID = 10A
BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS Rg gfs
25 --1.0 -----
-11 16.5 ---1.35 25
-13.5 20 3.0 1.0 100 ---
V m m V uA nA S
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V f = 1.0MHz VDD = 15V, RL = 25, ID = 1A, V GEN = 10V, RG = 6 VDS = 15V, ID = 10A, VGS = 5V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------7.56 2.74 2.22 6.81 1.8 20.37 3.42 1046.7 148.75 78.26 ----------pF nS nC
Source-Drain Diode
Max. Diode Forward Current Diode Forward Voltage IS = 2.3A, V GS = 0V Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance. IS VSD ---0.85 10 1.3 A V
TSM4410
2-3
2006/06 rev. A
SOP-8 Mechanical Drawing
SOP-8 DIMENSION DIM A B C D F G K M P R 0 MILLIMETERS MIN 4.80 3.80 1.35 0.35 0.40 0.10
o
INCHES MIN 0.189 0.150 0.054 0.014 0.016 0.004 0
o
MAX 5.00 4.00 1.75 0.49 1.25 0.25 7
o
MAX 0.196 0.157 0.068 0.019 0.049 0.009 7
o
1.27 (typ)
0.05 (typ)
5.80 0.25
6.20 0.50
0.229 0.010
0.244 0.019
TSM4410
3-3
2006/06 rev. A

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