 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TSM9435 -30V P-Channel Enhancement-Mode MOSFET Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS = -30V RDS (on), Vgs @ -10V, Ids @ -5.3A =60m RDS (on), Vgs @ -4.5V, Ids @ -4.2A =90m Features Advanced trench process technology High density cell design for ultra low on-resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Block Diagram P-Channel MOSFET Ordering Information Part No. TSM9435CS Packing Tape & Reel 2,500/per reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Pulsed Drain Current, Maximum Power Dissipation Ta = 25 C Ta = 70 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit -30V 20 -5.3 -20 2.5 1.3 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. Symbol Rjf Rja Limit 30 50 Unit o o C/W C/W TSM9435 1-3 2005/06 rev. C Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Conditions VGS = 0V, ID = 250uA VGS = -10V, ID = -5.3A VGS = -4.5V, ID = -4.2A VDS = VGS, ID = 250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = -15V, ID = -5.3A Symbol BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS Min -30 ---1.0 --4 ------------- Typ -50 70 -1.7 --7 9.52 3.43 1.71 10.8 2.33 22.53 3.87 551.57 90.96 60.79 --- Max -60 90 -3.0 -1.0 100 ------------1.9 -1.3 Unit V m V uA nA S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = -5.3A, VGS = 0V A V VSD VDS = -15V, ID = -5.3A, VGS = -10V VDD = -15V, RL = 15, ID = -1A, VGEN = -10V, RG = 6 VDS = -15V, VGS = 0V, f = 1.0MHz nC nS pF Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM9435 2-3 2005/06 rev. C SOP-8 Mechanical Drawing A DIM SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27 (typ) 0.05 (typ) 0.10 0.25 0.004 0.009 0o 7o 0o 7o 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 16 9 B P 1 8 G C D K M R F A B C D F G K M P R TSM9435 3-3 2005/06 rev. C |
Price & Availability of TSM9435CS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |