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| AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. Features N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCES 1200V 30A C High speed switching Low Saturation Voltage VCE(sat)=3.0V@IC=30A Industry Standard TO-3P Package RoHS Compliant IC G G C E TO-3P E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25J IC@TC=100J ICM PD@TC=25J TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current 1 Parameter Collector-Emitter Voltage Rating 1200 30 60 30 160 208 -55 to 150 -55 to 150 300 Units V V A A A W J J J Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Notes: 1.Repetitive rating : Pulse width limited by max . junction temperature . Thermal Data Symbol Rthj-c Rthj-a Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Parameter Value 0.6 40 Units J /W J /W Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVCES IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres Parameter Collect-to-Emitter Breakdown Voltage Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE=0V VCE=30V f=1.0MHz Test Conditions VGE=0V, IC=250uA VGE=30V, VCE=0V VCE=1200V, VGE=0V VGE=15V, IC=30A VGE=15V, IC=60A VCE=VGE, IC=1mA IC=30A VCC=500V VGE=15V VCC=600V, Ic=30A, VGE=15V, RG=5, Inductive Load Min. 1200 3 Typ. 3 3.8 4.4 55 12 27 20 20 65 200 1.8 1.1 1320 105 9 Max. 500 1 3.6 7 88 300 2110 Units V nA mA V V V nC nC nC ns ns ns ns mJ mJ pF pF pF Data and specifications subject to change without notice 200411064-1/3 AP30G120W 160 100 T C =25 o C IC , Collector Current (A) 120 20V 18V 15V IC , Collector Current (A) T C =150 C 80 o 20V 18V 15V 12V 12V 80 60 V GE =10V 40 V GE =10V 40 20 0 0 3 6 9 12 0 0 3 6 9 12 V CE , Collector-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 160 6 140 V GE =15V VCE(sat) ,Saturation Voltage(V) 5 V GE = 15 V IC , Collector Current(A) 120 T C =25 J 100 I C = 60 A 4 80 T C =150 J I C =30A 3 60 40 2 20 0 0 2 4 6 8 10 12 1 0 40 80 120 160 V CE , Collector-Emitter Voltage (V) Junction Temperature ( o C) Fig 3. Typical Saturation Voltage Characteristics 1.4 10000 Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature f=1.0MHz Normalized VGE(th) (V) C ies 1.1 Capacitance (pF) 100 C oes 0.8 C res 0.5 -50 0 50 100 150 1 1 10 100 Junction Temperature ( o C ) V CE , Collector-Emitter Voltage (V) Fig 5. Gate Threshold Voltage Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2/3 AP30G120W 1000 1 V GE =15V T C =125 o C IC, Peak Collector Current(A) 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 10 t T 0.01 Safe Operating Area 1 1 10 100 1000 10000 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V CE , Collector-Emitter Voltage(V) t , Pulse Width (s) Fig 7. Turn-off SOA Fig 8. Effective Transient Thermal Impedance 20 20 T C =25 o C VCE , Collector-Emitter Voltage(V) 15 10 VCE , Collector-Emitter Voltage(V) I C = 60 A 30 A 15 A o TC=150 C 15 I C = 60 A 30 A 15 A 10 5 5 0 0 4 8 12 16 20 0 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE 250 20 200 VGE , Gate -Emitter Voltage (V) 16 Power Dissipation (W) I C = 3 0A V CC =200V V CC =300V V CC =500V 150 12 100 8 50 4 0 0 50 100 150 200 0 0 20 40 60 80 Junction Temperature ( J ) Q G , Gate Charge (nC) Fig11. Power Dissipation vs. Junction Temperature Fig 12. Gate Charge Characterisitics 3/3 |
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