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| BL GALAXY ELECTRICAL SILICON BRIDGE RECTIFIERS FEATURES Rating to 400V PRV Surge overload rating to 30 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Lead solderable per MIL-STD-202 method 208 Lead: silver plated copper, solderde plated Plastic material has UL flammability classification 94V-O Polarity symbols molded on body Weight: 1.0 grams .060(1.5) EDB101 --- EDB106 VOLTAGE RANGE: 50 --- 400 V CURRENT: 1.0 A DB-1 .255(6.5) .245(6.2) .310(7.9) .290(7.4) .350(8.9) .300(7.6) .365(9.3) .355(9.0) .135(3.4) .155(2.9) .020(.51) .016(.41) .205(5.2) .195(5.0) .165(4.2) .155(3.9) inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EDB 101 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard Output current @TA =55 EDB 102 100 70 100 EDB 103 150 105 150 1.0 EDB 104 200 140 200 EDB 105 300 210 300 EDB 106 400 280 400 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 (NOTE 2) IFSM 30.0 A VF IR trr CJ TJ TSTG 15 1.0 10.0 1.0 50 10 - 55 ---- + 150 - 55 ---- + 150 V A mA nS pF Maximum reverse recovery time (NOTE 1) Typical junction calacitance Operating junction temperature range Storage temperature range NOTE: 1. Test conditions: I F =0.5A, I R=-1.0A, I RR=-0.25A. 2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts. www.galaxycn.com Document Number 0287009 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC AVERAGE FORWARD CURRENT, AMPERSE EDB101 --- EDB106 FIG.2 -- TYPICAL FORWARD CURRENT DERATING CURVE 2 Single phaes half wave 60Hz resistive or inductive load 50 N 1. 10 N 1. +0.5A trr D.U.T. (+) 25VDC (approx) (-) PULSE GENERATOR (NOTE2) 0 -0.25A 1 1 NONINDUCTIVE OSCILLOSCOPE (NOTE1) -1.0A 1cm 0 0 25 50 75 100 125 150 NOTES:1.RISE TIME =7ns MAX. INPUT IMPEDANCE=1M.22pF 2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O SET TIME BASE FOR 10 ns /cm AMBIENT TEMPERATURE ( ) FIG.3 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, 100 INSTANTANEOUS FORWARD CURRENT, AMPERSE FIG.4 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 TJ=150 10 1 .0 AMPERSE TJ=100 1.0 0 .1 0.1 TJ=25 .0 1 TJ=125 P u lse W id th =300u S .01 .0 0 1 0 20 40 60 80 100 120 140 0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG.5 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.6 -- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT, 60 200 JUNCTION CAPACITANCE, (pF) TJ=25 100 60 40 20 10 6 4 2 1 .1 1 4 10 100 50 40 8.3ms Single Half Sine Wave TJ=25 EDB101-EDB104 AMPERSE 30 20 EDB105-EDB106 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE, VOLTS www.galaxycn.com Document Number 0287009 BLGALAXY ELECTRICAL 2. |
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