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| PESDXL4UF; PESDxL4UG; PESDxL4UW Low capacitance unidirectional quadruple ESD protection diode arrays Rev. 03 -- 14 January 2008 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1. Product overview Package NXP PESD3V3L4UF PESD5V0L4UF PESD3V3L4UG PESD5V0L4UG PESD3V3L4UW PESD5V0L4UW SOT886 SOT886 SOT353 SOT353 SOT665 SOT665 JEITA SC-88A SC-88A JEDEC MO-252 MO-252 leadless ultra small leadless ultra small very small very small ultra small and flat lead ultra small and flat lead Package configuration Type number 1.2 Features I I I I ESD protection of up to four lines Low diode capacitance Max. peak pulse power: PPP = 30 W Low clamping voltage: VCL = 12 V I I I I Ultra low leakage current: IRM = 5 nA ESD protection up to 20 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 2.5 A 1.3 Applications I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Per diode VRWM reverse standoff voltage PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW Cd diode capacitance PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW f = 1 MHz; VR = 0 V 22 28 pF 3.3 V Parameter Conditions Min Typ Max Unit - - 5.0 V - 16 19 pF 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description cathode (diode 1) common anode cathode (diode 2) cathode (diode 3) common anode cathode (diode 4) 6 5 bottom view 4 1 2 3 1 2 3 006aaa156 Simplified outline Symbol PESD3V3L4UF; PESD5V0L4UF 6 5 4 PESD3V3L4UG; PESD5V0L4UG 1 2 3 4 5 cathode (diode 1) common anode cathode (diode 2) cathode (diode 3) cathode (diode 4) 1 2 3 006aaa157 5 4 1 2 3 4 5 PESD3V3L4UW; PESD5V0L4UW 1 2 3 4 5 cathode (diode 1) common anode cathode (diode 2) cathode (diode 3) cathode (diode 4) 1 2 3 5 4 1 2 3 006aaa157 5 4 PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 2 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 3. Ordering information Table 4. Ordering information Package Name PESD3V3L4UF PESD5V0L4UF PESD3V3L4UG PESD5V0L4UG PESD3V3L4UW PESD5V0L4UW plastic surface-mounted package; 5 leads SOT665 SC-88A XSON6 Description plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm plastic surface-mounted package; 5 leads Version SOT886 SOT353 Type number 4. Marking Table 5. Marking codes Marking code[1] A5 A6 L1* L2* A2 A1 Type number PESD3V3L4UF PESD5V0L4UF PESD3V3L4UG PESD5V0L4UG PESD3V3L4UW PESD5V0L4UW [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode PPP IPP peak pulse power peak pulse current PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW IFSM non-repetitive peak forward square wave; current tp = 1 ms tp = 8/20 s tp = 8/20 s [1][2][3] [1][2][3] Parameter Conditions Min - Max 30 3.0 Unit W A - 2.5 A - 3.5 A PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 3 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays Table 6. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IZSM Parameter Conditions Min Max Unit non-repetitive peak reverse square wave; current tp = 1 ms PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW PZSM Per device Tj Tamb Tstg [1] [2] [3] - 0.9 A - 0.8 A non-repetitive peak reverse square wave; power dissipation tp = 1 ms junction temperature ambient temperature storage temperature - 6 W -65 -65 150 +150 +150 C C C Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. For PESDXL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5. For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2. Table 7. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Per diode VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] [2] [3] Device stressed with ten non-repetitive ESD pulses. For PESDXL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5. For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2. [1][2][3] Parameter Conditions Min - Max 20 10 Unit kV kV Table 8. Standard Per diode ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 4 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 001aaa631 120 IPP (%) 80 100 % IPP; 8 s 001aaa630 IPP 100 % 90 % e-t 50 % IPP; 20 s 40 10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t 0 Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 9. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Per diode VRWM reverse standoff voltage PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW IRM reverse leakage current PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW VBR breakdown voltage PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW VRWM = 3.3 V 75 300 nA 3.3 V Conditions Min Typ Max Unit - - 5.0 V VRWM = 5.0 V - 5 25 nA IR = 1 mA 5.32 5.6 5.88 V 6.46 6.8 7.14 V PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 5 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays Table 9. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol Parameter Cd diode capacitance PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW VCL clamping voltage PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW rdif differential resistance PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW [1] [2] [3] [1][2][3] Conditions f = 1 MHz; VR = 0 V Min Typ Max Unit - 22 28 pF - 16 19 pF IPP = 1 A - - 8 V IPP = 3 A - - 12 V IPP = 1 A - - 10 V IPP = 2.5 A - - 13 V IR = 1 mA 200 - - 100 Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. For PESDXL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5. For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2. PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 6 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 10 006aab134 102 006aab135 IZSM (A) PZSM (W) (1) 1 (2) 10 (1) (2) 10-1 10-2 10-1 1 tp (ms) 10 1 10-2 10-1 1 tp (ms) 10 Tamb = 25 C (1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW (2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW Tamb = 25 C (1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW (2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW Fig 3. Non-repetitive peak reverse current as a function of pulse duration; maximum values Fig 4. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values 006aab137 26 Cd (pF) 22 006aab136 10 IR IR(25C) 18 1 (1) 14 (2) 10 6 0 1 2 3 4 VR (V) 5 10-1 -75 -25 25 75 125 175 Tj (C) f = 1 MHz; Tamb = 25 C (1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW (2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse current as a function of junction temperature; typical values PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 7 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays I -VCL -VBR -VRWM -IRM -IR - P-N V + -IPP 006aaa407 Fig 7. V-I characteristics for a unidirectional ESD protection diode PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 8 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays ESD TESTER RZ CZ 450 RG 223/U 50 coax DIGITIZING OSCILLOSCOPE 10x ATTENUATOR (1) 50 IEC 61000-4-2 network CZ = 150 pF; RZ = 330 DUT DEVICE UNDER TEST (1): attenuator is only used for open socket high voltage measurements vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div PESD5V0L4UF/G/W GND2 PESD3V3L4UF/G/W GND GND1 unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 5 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aab138 Fig 8. ESD clamping test setup and waveforms PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 9 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 7. Application information The devices are designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. The devices provide a surge capability of 30 W per line for an 8/20 s waveform each. data- or transmission lines DUT 1 2 3 4 5 1 n.c. 2 3 DUT 5 4 unidirectional protection of 4 lines bidirectional protection of 3 lines 006aab126 Fig 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 10 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 8. Package outline 1.05 0.95 0.6 3 4 0.50 max 0.04 max 0.25 0.17 2.2 1.35 2.0 1.15 5 2.2 1.8 4 0.45 0.15 1.1 0.8 0.5 1.5 1.4 0.5 1 6 2 5 1 0.65 1.3 04-07-22 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 04-11-16 0.40 0.32 Dimensions in mm 0.35 0.27 Fig 10. Package outline PESDXL4UF (SOT886) 1.7 1.5 5 Fig 11. Package outline PESDxL4UG (SOT353/SC-88A) 0.6 0.5 4 0.3 0.1 1.7 1.5 1.3 1.1 1 0.5 1 Dimensions in mm 2 3 0.27 0.17 0.18 0.08 04-11-08 Fig 12. Package outline PESDxL4UW (SOT665) PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 11 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3L4UF PESD5V0L4UF PESD3V3L4UG PESD5V0L4UG PESD3V3L4UW PESD5V0L4UW Package SOT886 SOT886 SOT353 SOT353 SOT665 SOT665 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T4 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T4 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel [1] [2] [3] [4] For further information and the availability of packing methods, see Section 13. T1: normal taping T4: 90 rotated reverse taping T2: reverse taping [2] [3] [2] [3] [2] [4] [2] [4] Packing quantity 3000 -115 -125 -115 -125 4000 -115 -115 5000 -115 -132 -115 -132 8000 -315 -315 10000 -135 -165 -135 -165 - 10. Soldering 1.250 0.675 0.370 (6x) 0.500 1.700 0.500 0.270 (6x) solder lands solder paste occupied area Dimensions in mm 0.325 (6x) 0.425 (6x) sot886_fr Reflow soldering is the only recommended soldering method. Fig 13. Reflow soldering footprint PESDXL4UF (SOT886) PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 12 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 2.65 0.60 (1x) 2.35 0.40 0.90 2.10 0.50 (4x) solder lands 0.50 (4x) 1.20 2.40 sot353_fr solder paste solder resist occupied area Dimensions in mm Fig 14. Reflow soldering footprint PESDxL4UG (SOT353/SC-88A) 2.25 2.65 4.50 2.70 0.70 0.30 1.00 4.00 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering Dimensions in mm Fig 15. Wave soldering footprint PESDxL4UG (SOT353/SC-88A) PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 13 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 2.45 2.10 1.60 0.15 (2x) 0.70 (2x) 2.00 1.70 1.00 0.45 (2x) 0.30 0.375 (2x) 0.40 (5x) 0.55 1.25 1.375 1.20 2.20 solder lands placement area occupied area 0.075 solder resist Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint PESDxL4UW (SOT665) PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 14 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 11. Revision history Table 11. Revision history Release date 20080114 Data sheet status Product data sheet Change notice Supersedes PESDXL4UW_SER_2 PESDXL4UG_SERIES_1 Document ID PESDXL4UF_G_W_3 Modifications: * * * * * * * * The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type numbers PESD3V3L4UF and PESD5V0L4UF added Table 1 "Product overview": added Figure 7: added Section 9 "Packing information": added Section 10 "Soldering": added Section 12 "Legal information": updated Product specification Product specification PESDXL4UW_SERIES_1 - PESDXL4UW_SER_2 20040406 PESDXL4UG_SERIES_1 20040323 PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 15 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com PESDXL4UF_G_W_3 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 -- 14 January 2008 16 of 17 NXP Semiconductors PESDXL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 January 2008 Document identifier: PESDXL4UF_G_W_3 |
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