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| SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE High-Speed Switching Applications Unit: mm * * 4 V drive Low ON-resistance: Ron = 491 m (max) (@VGS = -4 V) Ron = 251 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -30 20 -1.4 -2.8 500 150 -55 to 150 Unit V V A mW C C 1, 2, 5, 6 : Drain 3 ES6 4 : Gate : Source Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2) Note: JEDEC JEITA TOSHIBA 2-2N1A Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Ciss Coss Crss ton toff VDSF Test Condition ID = -1 mA, VGS = 0 ID = -1 mA, VGS = + 20 V VDS = -30 V, VGS = 0 VGS = 16 V, VDS = 0 VDS = -5 V, ID = -1 mA VDS = -5 V, ID =- 0.65 A ID = -0.65 A, VGS = -10 V ID = -0.4 A, VGS = -4 V (Note 2) (Note 2) (Note 2) Min -30 -15 -1.2 0.8 (Note 2) Typ. 1.5 191 371 137 39 20 15 14 0.85 Max -1 1 -2.6 251 491 1.2 Unit V A A V S m pF pF pF ns V VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDD = -15 V, ID = -0.65 A, VGS = 0 to -4 V, RG = 10 ID = 1.4 A, VGS = 0 V Drain-source forward voltage Note 2: Pulse test 1 2007-11-01 SSM6J207FE Switching Time Test Circuit (a) Test circuit 0 IN RG RL VDD -4 V 90% OUT (b) VIN 0V 10% -4 V 10 s (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = -15 V RG = 10 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C VDD Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 KT 1 2 3 1 2 3 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM6J207FE ID - VDS -3.0 -10 V -6 V -2.5 -4 V -2.0 -3.6 V -1.5 -10 Common Source VDS = -5 V -1 ID - VGS (A) ID ID Drain current -0.1 Ta = 100 C -0.01 -25 C 25 C VGS = -3.3 V -0.001 Common Source Ta = 25C 0 -0.2 -0.4 -0.6 -0.8 -1 -0.0001 0 Drain current -1.0 -0.5 0 (A) -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) - VGS 1000 900 ID = -0.65 A Common Source 1000 900 RDS (ON) - ID Common Source Ta = 25C Drain-source ON-resistance RDS (ON) (m) 800 700 600 500 25 C 400 300 200 100 0 0 -2 -4 -6 -25 C -8 -10 Ta =100 C Drain-source ON-resistance RDS (ON) (m) 800 700 600 500 400 300 200 100 0 0 -0.5 -1.0 - 10 V VGS = - 4.0V -1.5 -2.0 -2.5 -3.0 Gate-source voltage VGS (V) Drain current ID (A) RDS (ON) - Ta 1000 -2.0 Vth - Ta Vth (V) Gate threshold voltage Common Source Drain-source on-resistance RDS (ON) (m) 800 -1.5 600 ID = -0.4 A 400 / VGS = -4.0 V -1.0 -0.5 Common source VDS = -5 V 0 ID = -1 mA 0 50 100 150 200 -0.65 A / -10 V 0 -50 0 50 100 150 -50 Ambient temperature Ta (C) Ambient temperature Ta (C) 3 2007-11-01 SSM6J207FE |Yfs| - ID (S) 10 10 IDR - VDS Common Source (A) Common Source VDS = -5 V 3 Ta = 25C D IDR S Yfs VGS = 0 V 1 Ta = 25C IDR Forward transfer admittance G 0.1 1 Drain reverse current Ta = 100 C 0.01 0.3 25 C 0.001 -25 C 0.2 0.4 0.6 0.8 1.0 1.2 0.1 -0.01 -0.1 -1 -10 0.0001 0 Drain current ID (A) Drain-source voltage VDS (V) C - VDS 1000 t - ID 600 toff 500 (pF) (ns) 300 100 tf C Capacitance Ciss 100 50 30 Coss Crss 10 -0.1 -1 -10 -100 Switching time t 10 ton tr 1 -0.01 -0.1 -1 -10 Drain-source voltage VDS (V) Drain current ID (A) 1000 PD - Ta Mounted on an FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm Drain Power Dissipation PD (mW) 800 600 400 200 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta (C) 4 2007-11-01 SSM6J207FE RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01 |
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