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| HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Features * * * * Plastic Packaged GaAs Power FET Suitable for Commercial Wireless Applications High Efficiency 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. 2 3 Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +7V -5V IDSS 1mA 150C -65 to +150C 0.7 Watt PB Package (SOT-23) Electrical Specifications (TA=25C) f=1900 MHz for all RF Tests Symbol IDSS VP gm Rth P1dB Parameters & Conditions Saturated Current at VDS=5V, VGS=0V Pinch-off Voltage at VDS=5V, ID=5.5mA Transconductance at VDS=5V, ID=55mA Thermal Resistance Power Output at Test Points VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Units mA V mS C/W dBm Min. 90 -3.5 16.5 19.5 Typ. 110 -2.0 60 200 17.5 21.0 13.0 14.0 35.0 45.0 Max. -1.5 - G1dB dB PAE % Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Typical Performance at 25C Output Power & Efficiency vs Vds @ f=0.9GHz,Ids=55mA Po (dBm) 22 20 40 18 16 10 14 1 2 3 4 5 6 0 Vds (V) 30 20 Po PAE PAE (%) 60 50 Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=55mA Po (dBm) 22 PAE (%) 60 50 20 40 18 30 20 16 10 14 1 2 3 4 5 6 0 Vds (V) Po PAE Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V Po (dBm) 20 PAE (%) 60 50 15 40 10 Gain 5 10 0 -8 -4 0 4 8 12 0 Pin (dBm) 30 20 Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V Po (dBm) 20 PAE (%) 60 50 15 40 10 Gain 5 10 0 -8 -4 0 4 8 12 16 0 Pin (dBm) 30 20 Po Gain Eff Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=5V Po (dBm) 25 20 15 Gain 10 5 0 -8 -4 0 4 8 12 30 20 10 0 Pin (dBm) PAE (%) 60 50 40 Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=5V Po (dBm) 40 PAE (%) 70 60 30 50 40 20 Gain 10 30 20 10 0 -8 -4 0 4 8 12 16 0 Pin (dBm) Po Gain Eff Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Frequency @ Vds=3V, Ids=55mA Po (dBm) 25 20 40 15 Gain 10 10 5 0.7 0.8 0.9 1.0 1.1 0 f (GHz) 30 20 PAE (%) 60 50 Po Gain PAE Output Power & Efficiency & Gain vs Frequency @ Vds=5V, Ids=55mA Po (dBm) 25 20 PAE (%) 60 50 40 Po Gain PAE 15 Gain 10 30 20 10 5 1.6 1.7 1.8 1.9 2.0 0 2.1 f (GHz) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Power Derating Curve 1 Total Power Dissipation,PT (W) (25,0.7) 0.5 (150,0) 0 0 50 100 150 225 Case Temperature,TC () Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=3V, IDS=0.5IDSS (GHz) 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 S11 0.948 0.951 0.917 0.921 0.900 0.882 0.863 0.845 0.830 0.806 0.790 0.772 0.754 0.737 0.719 0.705 0.688 0.672 0.656 0.645 0.633 0.621 0.609 0.592 ANG -23.77 -26.56 -30.62 -33.76 -37.95 -41.80 -45.32 -49.01 -53.02 -56.42 -60.86 -64.64 -68.42 -72.35 -75.84 -79.81 -83.30 -86.86 -90.42 -93.62 -96.88 -99.97 -102.83 -106.18 S21 3.799 3.804 3.776 3.791 3.749 3.718 3.675 3.660 3.617 3.573 3.516 3.459 3.416 3.360 3.295 3.246 3.177 3.111 3.050 2.997 2.943 2.882 2.834 2.773 ANG 156.53 154.09 150.89 147.31 144.12 140.69 137.44 134.23 130.89 127.74 124.44 121.28 118.34 115.14 112.33 109.54 106.66 103.89 101.13 98.78 96.01 93.79 91.39 88.94 S12 0.023 0.027 0.030 0.033 0.036 0.040 0.042 0.045 0.047 0.050 0.053 0.054 0.056 0.059 0.061 0.063 0.065 0.067 0.067 0.070 0.070 0.072 0.074 0.074 ANG 81.85 80.61 78.24 78.56 77.09 75.16 74.56 74.13 72.62 71.86 70.62 70.36 69.35 68.31 67.38 68.36 66.96 66.79 65.87 66.25 66.11 65.76 66.42 66.09 S22 0.628 0.635 0.640 0.620 0.623 0.608 0.607 0.609 0.596 0.592 0.585 0.579 0.573 0.566 0.556 0.549 0.543 0.541 0.539 0.536 0.535 0.533 0.530 0.531 ANG -6.09 -8.06 -8.25 -10.94 -11.31 -12.06 -13.70 -14.52 -16.12 -17.43 -18.68 -19.89 -20.89 -22.35 -23.90 -25.25 -26.54 -27.60 -28.52 -30.05 -31.04 -32.48 -33.54 -34.72 S-MAGN AND ANGLES VDS=5V, IDS=0.5IDSS (GHz) 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 S11 0.951 0.954 0.920 0.926 0.904 0.889 0.870 0.851 0.837 0.816 0.800 0.784 0.764 0.750 0.732 0.716 0.700 0.686 0.672 0.658 0.647 0.636 0.625 0.606 ANG -23.36 -26.14 -30.14 -33.20 -37.37 -41.13 -44.66 -48.32 -52.25 -55.67 -60.05 -63.85 -67.67 -71.58 -75.13 -79.06 -82.44 -86.01 -89.49 -92.95 -96.07 -99.18 -102.21 -105.58 S21 3.450 3.461 3.448 3.452 3.426 3.402 3.370 3.359 3.326 3.287 3.243 3.195 3.159 3.110 3.055 3.018 2.957 2.902 2.846 2.794 2.753 2.695 2.648 2.595 ANG 157.05 154.77 151.59 147.98 144.89 141.52 138.17 135.14 131.69 128.60 125.29 122.12 119.17 115.98 113.24 110.26 107.41 104.53 101.76 99.40 96.46 94.13 91.62 89.15 S12 0.020 0.022 0.024 0.026 0.030 0.031 0.033 0.036 0.037 0.039 0.040 0.042 0.043 0.045 0.047 0.048 0.049 0.050 0.052 0.052 0.054 0.055 0.057 0.058 ANG 82.24 80.78 78.75 79.31 77.60 75.36 74.89 73.98 73.82 72.86 71.72 72.09 70.69 71.38 70.94 71.01 71.24 70.51 70.96 71.62 71.12 72.37 73.34 72.95 S22 0.758 0.767 0.776 0.753 0.757 0.746 0.741 0.745 0.734 0.726 0.722 0.714 0.711 0.702 0.697 0.693 0.690 0.687 0.682 0.681 0.678 0.675 0.674 0.672 ANG -5.60 -7.30 -7.48 -9.89 -10.29 -10.86 -12.40 -13.31 -14.61 -15.93 -17.17 -18.31 -19.07 -20.61 -21.68 -22.81 -24.09 -25.21 -26.31 -27.68 -28.79 -30.12 -31.29 -32.53 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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