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LT1ZE67A XXXGX 00GB1 P4KE180 HES16C DS617 P4KE11 0372BDP1
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  Datasheet File OCR Text:
 SBP1020 THRU SBP10100
Features
* Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction * Guard ring for overvoltage protection * Low power loss, high efficiency * High current capability, Low forward voltage drop * High surge capability * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * Dual rectifier construction * High temperature soldering guaranteed : 250E /10 seconds, 0.25" (6.35mm) from case
CURRENT 10.0Amperes VOLTAGE 20 to 100 Volts
ITO-220
10 0.5 3.2
0.2 0.1
4.5 0.2 6.4 0.1
2.7 0.2
2.7 0.2
0. 2
3.7
Mechanical Data
* Case : JEDEC ITO-220 molded plastic body * Terminals : Lead solderable per MIL-STD-750, Method 2026 * Polarity : As marked. No suffix indicates Common Cathode, suffix "A" indicates Common Anode * Mounting Position : Any * Weight : 0.08 ounce, 2.24 gram
2.54
0.2
0.7 2.54
0.2 0.2
13Min
1.3 0.2
15 0.3
0.5 2.4 PIN 1 PIN 3 Negative CT Suffix "A"
0.2 0.2
PIN 1 PIN 3 Positive CT Suffix "C"
+ CASE PIN 2
CASE PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25E ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For capacitive load, derate by 20%)
Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see Fig. 1) Repetitive peak forward current(square wavr, 20KHZ) at Tc=105E Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 5.0A (Note 1) Maximum instantaneous reverse current at rated DC blocking voltage (Note1) Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range TA=25E TA=100E Re JC TJ TSTG -65 to +125 -65 to +150 VRRM VRMS VDC I(AV) IFRM IFSM
SBP 1020 SBP 1030 SBP 1040 SBP 1050 SBP 1060 SBP 1080 SBP 10100
Units Volts Volts Volts Amps Amps Amps
20 14 20
30 21 30
40 28 40
50 35 50 10.0 20.0 150.0
60 42 60
80 56 80
100 70 100
VF IR
0.65 1.0 50 5.0
0.75
0.80
0.85
Volts mA E /W
25
-65 to +150
E E
Notes:
(1) Pulse test: 300iS pulse width, 1% duty cycle (2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBP1020 THRU SBP10100
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES 5.0 4.0 3.0 2.0 1.0 0 0 20 40 60 80 100 120 150
| | SBP1020-SBP1040 - - - SBP1050-SBP10100
RESISTIVE OR INDUCTIVE LOAD 0.375"(9.5MM) LEAD LENGTH
FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
150 125 PEAK FORWARD SURGE CURRENT (AMPERES) 100 75 50 25 0 1 10 NUMBER OF CYCLES AT 60Hz 100
TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
LEAD TEMPERATURE (E )
FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
50 INSTANTANEOUS FORWARD CURRENT (AMPERES)
TJ=150E
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20 10
TJ=125E
10
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
TJ=125E
1
PULSE WIDTH=300A 1% DUTY CYCLE
1
TJ=75E
0.1
0.1
TJ=25E
| | SBP1020-SBP1040 - - - SBP1050-SBP10100
0.01
TJ=25E | | SBP1020-SBP1040 - - - SBP1050-SBP10100
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0 20 40
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
4000
TJ=25E f=1.0MHz Vsig=50mVp-p
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100 TRANSIENT THERMAL IMPEDANCE,E / W
JUNCTION CAPACITANCE (pF)
10
1000
1
| | SBP1020-SBP1040 - - - SBP1050-SBP10100
100 0.1 1 10 100 REVERSE VOLTAGE. VOLTS
0.1 0.01 0.1 1 T, PULSE DURATION, sec. 10 100


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