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| SGM5018 GENERAL DESCRIPTION The SGM5018 is a high-speed, low-voltage, quad single-pole/double-throw (SPDT) CMOS analog switch multiplexer that is designed to operate from a single +1.8V to +5.5V power supply. SGM5018 features guaranteed on-resistance (4.5 TYP), on-resistance matching (3.6 MAX) between switches and guaranteed on-resistance flatness over the signal range (3 TYP). This ensures excellent linearity and low distortion when switching audio signals. Fast switching speed, coupled with high signal bandwidth (300MHz), also makes the parts suitable for video signal switching. CMOS process ensures ultra low power dissipation, making the parts ideally suited for portable and battery powered instruments. SGM5018 is available in Pb-free TSSOP-16 package. 4.5, High Speed, Low Voltage Quad, SPDT Analog Switch FEATURES - - - - - - - - - Low Voltage Operation : 1.8V to 5.5V RON is Typically 4.5 at 5V Low On-Resistance Flatness -3dB Bandwidth: 300MHz Rail-to-Rail Input and Output Operation Typical Power Consumption (<0.01 W) TTL/CMOS Compatible -40 to +85 Operating Temperature Range Lead (Pb) Free TSSOP-16 Package PIN CONFIGURATION (TOP VIEW) APPLICATIONS Battery-Powered Systems USB 1.1 Signal Switching Circuits Communication Systems Portable Instrumentation Audio and Video Switching Computer Peripherals Cell Phones PDAs FUNCTION TABLE EN IN NO NC L L L H OFF ON ON OFF H = Don't Care. All Switches Open SG Microelectronics Co, Ltd Tel: 86/10/51798160/80 www.sg-micro.com REV. A ORDERING INFORMATION MODEL SGM5018 PIN-PACKAGE TSSOP-16 SPECIFIED TEMPERATURE RANGE -40C to +85C ORDERING NUMBER SGM5018YTS/TR PACKAGE MARKING SGM5018YTS PACKAGE OPTION Tape and Reel, 3000 ABSOLUTE MAXIMUM RATINGS V+ to GND......................................................................-0.3V to +6V Analog, Digital voltage range(1)........................- 0.3V to (V+ + 0.3V) Continuous Current NO, NC, or COM ................................200mA Peak Current NO, NC, or COM ...........................................350mA Operating Temperature Range..................................- 40C to +85C Junction Temperature.............................................................+150C Storage Temperature............................................... - 65C to +150C Lead Temperature (soldering, 10s)...........................................+260C ESD Susceptibility HBM..........................................................................................4000V MM..............................................................................................400V Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Signals on NC, NO, or COM or INX exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. PIN DESCRIPTION NAME V+ GND TSSOP PIN 16 8 FUNCTION IN EN 1 15 4,7,9,12 3,6,10,13 2,5,11,14 COMX NOX NCX Power supply Ground Digital control pin to connect the COM terminal to the NO or NC terminals. Digital Enable Input. Normally connect to GND. Drive to logic high to set all switches off. Common terminal Normally-open terminal Normally-closed terminal Note: NOX, NCX and COMX terminal may be an input or output. 2 SGM5018 ELECTRICAL CHARACTERISTICS (V+ = +4.5V to +5.5V, GND = 0V, VIH = +1.6V, VIL = +0.5V, TA = - 40C to + 85C. Typical values are at V+ = +5.0V, TA = + 25C, unless otherwise noted.) PARAMETER ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage current Channel ON Leakage current DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Break-Before-Make Time Delay Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB Charge Injection Select Input to Common I/O Channel ON Capacitance POWER REQUIREMENTS Power Supply Range Power Supply Current V+ I+ V+ = 5.5V, VIN = 0V or V+ - 40C to +85C - 40C to +85C 1.8 5.5 1 V A tON tOFF tD OISO VCOM = 2V, CL = 35pF, RL = 300, Test Circuit2 VNO or VNC = 3V, RL = 300, CL = 35pF, Test Circuit 4 RL = 50, f = 10MHz, 1MHz VBIAS = 350mV, 10MHz VIN = 0dBm, Test Circuit5 RL = 50, f = 10MHz, 1MHz VBIAS = 350mV, 10MHz VIN = 0dBm, Test Circuit6 RL = 50, VIN = 0dBm, VBIAS = 350mV, Test Circuit7 VIN = GND, RG = 0, Q = CL x VOUT, CL = 1nF, Test Circuit3 +25C +25C +25C +25C +25C +25C +25C +25C +25C +25C 40 30 18 -70 -50 -90 -60 300 20 42 ns ns ns dB dB dB dB MHz pC pF VINH VINL IIN V+ =5.5V, VIN = 0V or5.5V - 40C to +85C - 40C to +85C - 40C to +85C 1.6 0.5 1 V V A VNO, VNC, VCOM RON RON RFLAT(ON) INC(OFF), INO(OFF) INC(ON), INO(ON), ICOM(ON) V+ = 4.5V, VNO or VNC = 1.2V, ICOM = -100mA, Test Circuit 1 V+ = 4.5V, VNO or VNC = 1.2V, ICOM = -100mA, Test Circuit 1 V+ = 4.5V, VNO or VNC = 1.2V, ICOM = -100mA, Test Circuit 1 V+ = 5.5V, VNO or VNC = 3.3V/ 0.3V, VCOM = 0.3V/ 3.3V V+ =5.5V, VCOM = 0.3V/ 3.3V, VNO or VNC = 0.3V/ 3.3V, or floating - 40C to +85C +25C - 40C to +85C +25C - 40C to +85C +25C - 40C to +85C - 40C to +85C - 40C to +85C 3 0.8 0 4.5 V+ 7 8 3.6 4.2 3.7 4.5 1 1 V A A SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS XTALK BW Q CON Specifications subject to changes without notice. 3 SGM5018 ELECTRICAL CHARACTERISTICS (V+ = +2.7V to +3.6V, VIH = +1.6V, VIL = +0.4V, TA = - 40C to +85C. Typical values are at V+ = +3.0V, TA = + 25C, unless otherwise noted.) PARAMETER ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage current Channel ON Leakage current DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Break-Before-Make Time Delay Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB Charge Injection Select Input to Common I/O Channel ON Capacitance tON tOFF tD OISO VCOM = 2V, CL = 35pF, RL = 300, Test Circuit2 VNO or VNC = 2V, RL = 300, CL = 35pF, Test Circuit 4 RL = 50, f = 10MHz, 1MHz VBIAS = 350mV, 10MHz VIN = 0dBm, Test Circuit5 RL = 50 , f = 10 MHz, 1MHz VBIAS = 350 mV, 10MHz VIN = 0dBm, Test Circuit6 RL = 50, VIN = 0dBm, VBIAS = 350mV, Test Circuit7 VIN = GND, RG = 0, Q = CL x VOUT, CL =1nF, Test Circuit3 +25C +25C +25C +25C +25C +25C +25C +25C +25C +25C 48 45 20 -70 -50 -90 -60 300 20 42 ns ns ns dB dB dB dB MHz pC pF VINH VINL IIN V+ = 5.5V, VIN = 0V or 3.6V - 40C to +85C - 40C to +85C - 40C to +85C 1.5 0.4 1 V V A VNO, VNC, VCOM RON RON RFLAT(ON) INC(OFF), INO(OFF) INC(ON), INO(ON), ICOM(ON) V+ = 2.7V, VNO or VNC = 1.2V, ICOM = -100mA, Test Circuit 1 V+ = 2.7V, VNO or VNC = 1.2V, ICOM = -100mA, Test Circuit 1 V+ = 2.7V, VNO or VNC = 1.2V, ICOM = -100mA, Test Circuit 1 V+ = 3.6V, VNO or VNC = 3.3V / 0.3V, VCOM = 0.3V/ 3.3V V+ = 3.6V, VCOM = 0.3V/ 3.3V, VNO or VNC = 0.3V/ 3.3V, or floating - 40C to +85C +25C - 40C to +85C +25C - 40C to +85C +25C - 40C to +85C - 40C to +85C - 40C to +85C 7 1.6 0 11 V+ 15.5 18.5 4 4.6 9.4 13 1 1 V A A SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS XTALK BW Q CON Specifications subject to changes without notice. 4 SGM5018 TEST CIRCUITS Test Circuit 1. On Resistance Test Circuit 2. Switching Times Test Circuit 3. Charge Injection 5 SGM5018 TEST CIRCUITS (Cont.) Test Circuit 4. Break-Before-Make Time Delay, tD Test Circuit 5. Off Isolation V+ 0.1F V+ NO or NC Source Signal N.C. NO or NC COM RL 50 GND CL 5pF COM RL 50 CL 5pF VOUT IN Channel To Channel Crosstalk = -20 VNO or VNC VOUT Test Circuit 6. Channel-to-Channel Crosstalk 6 SGM5018 TEST CIRCUITS (Cont.) Test Circuit 7. Bandwidth -3dB 7 SGM5018 TYPICAL PERFORMANCE CHARACTERISTICS On Response vs.Frequency 3 V+ = +4.2V TA = +25 0 On Response(dB) On Response vs.Frequency 3 V+ = +3V TA = +25 0 On Response(dB) -3 -3 -6 -6 -9 0.1 1 10 Frequency(MHz) 100 1000 -9 0.1 1 10 Frequency(MHz) 100 1000 Response vs.Frequency 20 0 -20 On Response(dB) Response vs.Frequency 20 0 -20 On Response(dB) -40 -60 -80 -100 -120 1000 -40 -60 -80 -100 -120 -140 0.01 V+ = +4.2V TA = +25 0.1 1 10 Frequency(MHz) 100 OFF-ISOLATION CROSSTALK OFF-ISOLATION CROSSTALK V+ = +3V TA = +25 0.1 1 10 Frequency(MHz) 100 1000 -140 0.01 8 SGM5018 PACKAGE OUTLINE DIMENSIONS TSSOP-16 A b Symbol E1 E Dimensions In Millimeters Min Max 5.100 4.500 0.300 0.200 6.550 1.100 0.800 1.000 0.020 0.150 0.65 (BSC) 0.500 0.700 0.25(TYP) 1 7 4.900 4.300 0.190 0.090 6.250 Dimensions In Inches Min Max 0.193 0.169 0.007 0.004 0.246 0.201 0.177 0.012 0.008 0.258 0.043 0.031 0.039 0.001 0.006 0.026 (BSC) 0.020 0.028 0.01(TYP) 1 7 PIN #1 IDENT. e A2 A C D L H A1 A D E b c E1 A A2 A1 e L H 9 SGM5018 REVISION HISTORY Location 11/2007--Preliminary Datasheet 01/2008--Data Sheet REV.A Page SG Microelectronics Co., Ltd A2608, NO.72 North Road Xisanhuan, Haidian District, Beijing, China 100037 Tel: 86-10-51798160/80 Fax: 86-10-51798180-803 www.sg-micro.com 10 SGM5018 |
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