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| SMTA5-300 Phase Control Thyristor Type SMTA5-300-50 SMTA5-300-52 SMTA5-300-55 SMTA5-300-60 SMTA5-300-65 VRSM 5100 5300 5600 6100 6600 VRRM , VDRM 5000 5200 5500 6000 6500 Symbol ITAVM ITRMS ITSM i2t Parameter average on-state current maximum RMS on-state current surge-current Test Conditions TC=100OC TVJ=TVJM TC=25OC; tP=10ms TVJ=TVJM; tP=10ms TC=25OC; tP=10ms TVJ=TVJM; tP=10ms Value 300 520 4.8 4.3 115 92.5 Unit A A kA kA2*s i2t-value (di/dt)cr critical rate of rise of on-state current critical rate of rise of off-state volvage off-state Leakage current reverse repeat Peak value voltage off state repeat Peak value voltage non-repetitive peak reverse voltage on-state voltage slope resistance gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current holding current latching current TVJ=TVJM; VD=0.67*VDRM ; f=50 Hz; iGM=3A; diG/dt=6A/s TVJ=TVJM; VD=0.67*VDRM ; gate open TVJ=TVJM; VR=VRRM; VD=VDRM TVJ=TVJM; 180OC sine wave, 50 Hz; gate open 250 A/s (dv/dt)cr IRRM/IDRM VRRM VDRM VRSM VTM rT VGT IGT VGD IGD IH IL 1000 100 5000-6500 5000-6500 5100-6600 2.35 2.3 2.5 350 0.4 10 350 V/s mA V V V V mW V mA V mA mA TVJ=TVJM TVJ=TVJM; ITM=800A TVJ=TVJM TVJ=25OC; VD=12V TVJ=25OC; VD=12V TVJ=TVJM; VD=0.67*VDRM TVJ=TVJM; VD=0.67*VDRM TVJ=25OC; VD=12V; gate open TVJ=25 C; VD=12V; tG=20s; iGM=3A; diG/dt=6A/s O 450 mA SEMPO Electronic Limited www.sempoel.com tgd delay time turn-off time TVJ=25OC; VD=0.5*VDRM; iGM=3A; diG/dt=6A/s TVJ=TVJM; IT=ITAVM; tP=200s; diR/dt=10A/s; VD=0.67*VDRM ;VR=100V; dVD/dt=20V/s TVJ=TVJM; IT=ITAVM;diR/dt=10A/s; VR=0.5*VRRM ;VRM=0.8*VRRM TVJ=TVJM 2 s tq 500 s Qr VTO TVJ TVJM Tstg RthJN RthNH F W a recovered charge threshold voltage working junction temperature maximum working junction temperature storage temperature thermal resistance; junction to case thermal resistance; case to heatsink clamping force weight maximum allowable acceleration 3.5 1.20 mAs V O -40...+125 125 -40...+125 DC, two-sided cooling two-sided cooling 0.045 0.008 12 280 50 C O C C O K/W K/W kN g m/s 2 2-i 3.5H 2 20 i 58 max i 34 26.5 i 34 i 53 SEMPO Electronic Limited www.sempoel.com 1200 1000 typ. 800 max. I T [A] 600 400 200 0 0 0.5 1 1.5 VT [V] 2 2.5 3 3.5 Limiting on-state characteristic iT = f (VT) OVj = TVj max SEMPO Electronic Limited www.sempoel.com 30 20 10 n 5 b a -40N 2 +25N +125N 1 0.5 0.2 10 20 50 100 200 iG [mA] 500 1000 2000 5000 10000 Gate characteristic VG=f(iG) with triggering area for VD = 6V Maximum rated peak gate power dissipation PGM = f (tg): a - 20 W (10ms) b - 40 W (1ms) c - 60 W (0.5ms) SEMPO Electronic Limited www.sempoel.com 0.06 0.05 0.03 0.02 0.01 0.001 0.01 0.1 t [s] 1 10 0 100 Transient thermal impedance Z thJC = f(t) DC, two-sided cooling Features: C Hermetic metal case with ceramic insulator C Capsule packages for double sided cooling C International standard case C Amplifying gates Typical Applications: C DC motor control C AC motor soft starter C Controlled rectifiers C AC controllers SEMPO Electronic Limited www.sempoel.com Z th JC [K/W] 0.04 |
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