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| VRRM = IF = 2500 V 100 A Fast-Diode Die 5SLX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1664-02 Feb. 05 * * * * Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values Parameter 1) Symbol VRRM IF IFRM Tvj Conditions min max 2500 100 Unit V A A C Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) Limited by Tvjmax -40 200 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter Continuous forward voltage Continuous reverse current Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 2) 2) Symbol VF IR Irr Qrr trr Erec Conditions IF = 100 A VR = 2500 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C IF = 100 A, VR = 1250 V, di/dt = 440 A/s, L = 1200 nH, Inductive load, Switch: 2x 5SMX12L2510 Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1.4 typ 1.75 1.8 1.5 2.5 92 115 57 98 900 1150 54 92 max 2.0 Unit V V A 7 mA A A C C ns ns mJ mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLX 12L2510 200 180 25 C 160 Erec [mJ], Irr [A], Qrr [C] 140 120 IF [A] 100 80 60 40 20 0 0 0.5 1 VF [V] 1.5 2 2.5 125 C 150 125 100 Irr 75 Qrr 50 Erec 25 VR = 1250 V di/dt = 440 A/s VGE = 15 V Tvj = 125 C L = 1.2 H 50 100 IF [A] 150 200 0 0 Fig. 1 Typical forward characteristics Fig. 2 Typical reverse recovery characteristics vs. forward current 150 VR = 1250 V IF = 100 A di/dt = 440 A/s Tvj = 125 C L = 1.2 H 0 160 140 120 Erec [mJ], Qrr [C], Irr [A] 100 80 60 40 Qrr 100 -200 50 -400 0 IF [A] IR -600 VR [V] -800 -50 Erec Irr VR = 1250 V IF = 100 A Tvj = 125 C L = 1.2 H 0 100 200 300 400 500 600 700 800 -100 VR -1000 -150 -1200 20 0 di/dt [A/s] -200 0 1000 2000 3000 4000 time [ns] -1400 5000 Fig. 3 Typical reverse recovery behaviour Fig. 4 Typical reverse recovery characteristics vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1664-02 Feb. 05 page 2 of 3 5SLX 12L2510 Mechanical properties Parameter Overall die L x W Dimensions exposed LxW front metal thickness Metallization 3) 3) Unit 12.4 x 12.4 10.38 x 10.38 305 20 AlSi1 Al / Ti / Ni / Ag 4 1.2 mm mm m m m front (A) back (K) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing A (Anode) Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1664-02 Feb. 05 |
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