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| AEGIS SEMICONDUTORES LTDA. A1C:240S.XX.10 VOLTAGE RATINGS Part Number VRRM , VR - (V) rep. peak reverse voltage TJ = 0 to 150OC A1C:240S.02.10 A1C:240S.04.10 A1C:240S.06.10 A1C:240S.08.10 A1C:240S.10.10 A1C:240S.12.10 A1C:240S.14.10 A1C:240S.16.10 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR - (V) Max. nonrep. peak reverse voltage O This datasheet applies to: Metric thread: A1C:240S.XX.10, A1D:240S.XX.10 Inch thread: A2C:240S.XX.10, A2D:240S.XX.10 TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600 TJ = 25 to 150 OC 300 500 700 900 1100 1300 1500 1700 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 150 -40 to 150 240 100 380 5.75 IFSM Max. Peak non-rep. surge current 6.27 kA 6.56 7.15 171.00 187 I t Max. I t capability 195 213.00 It 2 1/2 2 2 UNITS O O NOTES O 180 half sine wave C C C A O IF(RMS) Nom. RMS current A 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms kA s t = 10ms t = 8.3 ms O Initial TJ = 125O C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. O Initial TJ = 125 C, rated VRRM applied after surge. O 2 Initial TJ = 125OC, no voltage applied after surge. 2 Max. I t 2 1/2 capability 2340 1 50 240 50 30 As 2 1/2 Initial TJ = 125 C, no voltage applied after surge. for time tx = I t TJ = 25OC 2 1/2 It * tx1/2. (0.1 < tx < 10ms). IRRM Maximum peak reverse current at rated VRRM . IRM Peak reverse recovery current IFM Peak forward current di/dt Max. Non-repetitive rate-ofrise current F Mounting Force mA A A A/ms N.m TJ = 25OC, VD = VDRM , IFM = 240A. - AEGIS SEMICONDUTORES LTDA. A1C:240S.XX.10 CHARACTERISTICS PARAMETER VFM peak on-state voltage VF(TO) Threshold voltage rF Slope resistance trr Maximum reverse recovery time RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------TYP. --------------250(8.75) MAX. UNITS 1.75 0.8 1.15 1000 2000 0.2 0.03 --O TEST CONDITIONS Initial TJ = 25OC, 50-60Hz half sine, Ipeak = 754A. TJ = 150 O C TJ = 25 C, IF = 1A to V R = 30V, -dIF/dt = 25A/ms TJ = 25 C, -dIF/dt = 25A/ms, IFM = p x rated IF(Av.). O O V V mW ns C/W DC operation C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O g(oz.) DO-205AB (DO-9) JEDEC Maximum Allowable Case Temperature (C) 150 140 130 120 110 100 90 80 0 *Sinusoidal waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature 150 140 130 120 30 30 60 90 120 180 110 60 90 120 180 100 90 DC 80 0 50 100 150 200 250 300 350 *Rectangular waveform 50 100 150 200 250 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average Forward Power Loss 30 Fig. 2 - Current Ratings Characteristics 2500 Maximum Average Forward Power Loss 30 3000 Maximum Average Forward Power Loss (W) 2500 Maximum Average Forward Power Loss (W) 2000 2000 60 1500 60 1500 90 1000 90 120 180 1000 120 180 500 500 DC 0 *Sinusoidal waveform 0 *Rectangular waveform 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics AEGIS SEMICONDUTORES LTDA. A1C:240S.XX.10 Forward Voltage Drop 1000 1 Transient Thermal Impedance ZthJC 100 Transient Thermal Impedance ZthJC (C/W) 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Current (A) 0.1 10 25C 180 1 0.0 0.5 1.0 0.01 1E-3 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics Frequency Characteristics 50 Hz 100 Hz Frequency Characteristics Peak On-State Current (A) 100 Hz 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz Peak On-State Current (A) 50 Hz 200 Hz 500 Hz 1 kHz 1000 2 kHz 1000 10 kHz 5 kHz 100 101 *Sinusoidal pulse Tc = 60C 102 103 104 101 *Rectangular pulse Tc = 60C 102 103 104 Pulse Basewidth (?s) Pulse Basewidth (?s) Fig. 7 - Frequency Characteristics Frequency Characteristics Fig. 8 - Frequency Characteristics Frequency Characteristics Peak On-State Current (A) 50 Hz 100 Hz 200 Hz 500 Hz 1 kHz 2 kHz Peak On-State Current (A) 50 Hz 100 Hz 200 Hz 500 Hz 1000 1 kHz 2 kHz 1000 5 kHz 5 kHz 10 kHz *Sinusoidal Pulse Tc = 80C 102 103 104 101 *Rectangular Pulse Tc = 80C 102 103 104 Pulse Basewidth (?s) Pulse Basewidth (?s) Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics AEGIS SEMICONDUTORES LTDA. A1C:240S.XX.10 Frequency Characteristic Frequency Characteristics 50 Hz Peak On-State Current (A) 100 Hz 50 Hz 100 Hz Peak On-State (A) 200 Hz 500 Hz 1 kHz 1000 500 Hz 1 kHz 2 kHz 200 Hz 1000 5 kHz 2 kHz 10 kHz 5 kHz 100 *Sinusoidal pulse Tc = 100C 102 103 104 Pulse Basewidth (?s) *Rectangular pulse Tc = 100C 1E-4 1E-3 0.01 Pulse Basewidth (?s) Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Maximum On-State Energy Power Loss 1000 10 J Maximum On-State Energy Power Loss 1000 10 J 5J Peak On-State Current (A) 2J 0.5 J 1J Peak On-State Current (A) 5J 2J 1J 0.1 J 0.2 J 0.5 J 0.01 J 0.02 J 0.05 J 0.1 J 0.2 J 0.01 J 0.02 J 0.05 J 100 100 10 102 *Sinusoidal pulse 10 103 104 102 *Rectangular pulse 103 104 Pulse Basewidth (?s) Pulse Basewidth (?s) Fig. 13 - Maximum On-State Power Loss Characteristics M16 x 1.5 3/4 UNF 2A Fig. 14 - Maximum On-State Power Loss Characteristics DO-205AB(DO-9) SW32 Fig. 15 - Outline Characteristics |
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