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AEGIS
SEMICONDUTORES LTDA.
A5A:670.XX
VOLTAGE RATINGS
Part Number A5A:670.02 A5A:670.04 A5A:670.06 A5A:670.08 A5A:670.10 A5A:670.12 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180OC 200 400 600 800 1000 1200 TJ = -40 to 0 C 200 400 600 800 1000 1200
O
VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 180 C 300 500 700 900 1100 1300
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 550 125 1060 7.65 IFSM Max. Peak non-rep. surge current 8.00 kA 9.10 9.50 267 I t Max. I t capability
2 2
UNITS
O O
NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 180OC, rated VRRM applied after surge.
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial TJ = 180 C, no voltage applied after surge.
O
Initial TJ = 180OC, rated VRRM applied after surge.
292 378 414
kA s
2
t = 8.3 ms t = 10ms t = 8.3 ms Initial TJ = 180OC, no voltage applied after surge.
2
Initial TJ = 180OC, no voltage applied after surge. It
I2t1/2 Max. I2t1/2 capability F Mounting Force
4140 450
kA s
2 1/2
for time tx = I t
2 1/2
*
tx1/2.
(0.1 < tx < 10ms). -
N.m
AEGIS
SEMICONDUTORES LTDA.
A5A:670.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.50 --------13 --------57(2.0) DO-200AA MAX. UNITS 1.67 0.782 0.859 0.541 0.470 30 0.080 0.092 0.094 0.03 --V V mW mA
O O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 1728A. O TJ = 180 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180OC. Max. Rated VRRM
C/W DC operation, double side C/W 180O sine wave, double side C/W 120O rectangular wave, duble side
O
O
C/W Mtg. Surface smooth, flat and greased. -----
g(oz.) JEDEC
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature
180 170 160 150 140 130 120 110 100 90
DC 30 60 90 120 180
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 100 0
30 60 90 120 180
80
*Rectangular waveform
50 100 150 200 250 300 350 400 450 500 550 600 650 700
0
50
100
150
200
250
*Sinusoidal waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:670.XX
12000
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
30
8000
30
10000
8000
6000
6000
60
60
4000
90 120
4000
90 120
2000
180
2000
180 DC
0 0 200 400 600 800 1000 1200
*Sinusoidal waveform
0 0 200 400 600 800 1000 1200
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop
1
10000
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
2 3 4 5 6
Instantaneous Forward Current (A)
0.1
1000
0.01
125C
25C
100 0 1
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:670.XX
TO-200AA
Fig. 7 - Outline Characteristics

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