 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RN2107MFVRN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.220.05 Unit: mm 1.20.05 0.80.05 0.320.05 0.130.05 1. BASE 2. EMITTER 3. COLLECTOR Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN1107MFV~RN1109MFV Lead (Pb) - free 0.50.05 1.20.05 0.80.05 0.4 0.4 1 2 3 Equivalent Circuit and Bias Resistor Values VESM Type No. RN2107MFV RN2108MFV RN2109MFV R1 (k) 10 22 47 R2 (k) 47 47 22 JEDEC JEITA TOSHIBA 2-1L1A Weight: 0.0015 g (typ.) Maximum Ratings (Ta = 25C) Characteristic Collector-base voltage Collector-emitter voltage RN2107MFV ~RN2109MFV RN2107MFV Emitter-base voltage RN2108MFV RN2109MFV Collector current Collector power dissipation Junction temperature Storage temperature range RN2107MFV ~RN2109MFV IC PC(Note) Tj Tstg VEBO Symbol VCBO VCEO Rating -50 -50 -6 -7 -15 -100 150 150 -55~150 mA mW C C V Unit V V Note: Mounted on an FR4 board (25.4 mm x 25.4 mm x 1.6 mmt) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 1 2005-03-30 RN2107MFVRN2109MFV Electrical Characteristics (Ta = 25C) Characteristic Collector cutoff current RN2107MFV~ 2109MFV RN2107MFV Emitter cutoff current RN2108MFV RN2109MFV RN2107MFV DC current gain RN2108MFV RN2109MFV Collector-emitter saturation voltage RN2107MFV~ 2109MFV RN2107MFV Input voltage (ON) RN2108MFV RN2109MFV RN2107MFV Input voltage (OFF) RN2108MFV RN2109MFV Collector output capacitance RN2107MFV~ 2109MFV RN2107MFV Input resistor RN2108MFV RN2109MFV RN2107MFV Resistor ratio RN2108MFV RN2109MFV R1/R2 R1 Cob VCB = -10 V, IE = 0, f = 1 MHz VI (OFF) VCE = -5 V, IC = -0.1 mA VI (ON) VCE = -0.2 V, IC = -5 mA VCE (sat) IC = -5 mA, IB = -0.25 mA hFE VCE = -5 V, IC = -10 mA IEBO Symbol ICBO ICEO Test Circuit Test Condition VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VEB = -7 V, IC = 0 VEB = -15 V, IC = 0 Min -0.081 -0.078 -0.167 80 80 70 -0.7 -1.0 -2.2 -0.5 -0.6 -1.5 7 15.4 32.9 0.17 0.374 1.71 Typ. -0.1 0.9 10 22 47 0.213 0.468 2.14 Max -100 -500 -0.15 -0.145 -0.311 -0.3 -1.8 -2.6 -5.8 -1.0 -1.16 -2.6 13 28.6 61.1 0.255 0.562 2.56 k pF V V V mA Unit nA nA 2 2005-03-30 RN2107MFVRN2109MFV RN2107MFV -100 COLLECTOR CURRENT IC (mA) IC - VI (ON) -10000 RN2107MFV IC - VI (OFF) -10 Ta = 100C COLLECTOR CURRENT IC (A) -1000 Ta = 100C 25 -25 25 -1 -25 EMITTER COMMON VCE = -0.2V -0.1 -0.1 -100 EMITTER COMMON VCE = -5V -10 -0.2 -1 -10 -100 -0.4 -0.6 -0.8 -1 -1.2 -1.4 INPUT VOLTAGEVI (ON) ( V) INPUT VOLTAGEVI (OFF) ( V) RN2108MFV -100 IC - VI (ON) -10000 COLLECTOR CURRENT IC (A) RN2108MFV IC - VI (OFF) EMITTER COMMON VCE = -5V COLLECTOR CURRENT IC (mA) -10 Ta = 100C 25 -1 -1000 Ta = 100C 25 -25 -25 EMITTER COMMON VCE = -0.2V -100 -0.1 -0.1 -1 -10 -100 -10 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 INPUT VOLTAGEVI (ON) ( V) INPUT VOLTAGEVI (OFF) ( V) RN219MFV -100 COLLECTOR CURRENT IC (mA) IC - VI (ON) -10000 RN2109MFV IC - VI (OFF) COLLECTOR CURRENT IC (A) EMITTER COMMON VCE = -0.2V -10 EMITTER COMMON VCE = -5V -1000 Ta = 100C 25 -25 Ta = 100C -1 25 -25 -100 -0.1 -0.1 -1 -10 -100 -10 -0.6 -1 -1.4 -1.8 -2.2 -2.6 -3 INPUT VOLTAGEVI (ON) ( V) INPUT VOLTAGEVI (OFF) ( V) 3 2005-03-30 RN2107MFVRN2109MFV RN2107MFV 1000 hFE - IC -1 RN2107MFV VCE(sat) - IC 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) DC CURRENT GAIN hFE COMMON EMITTER VCE = -5 V Ta = 100C COMMON EMITTER IC / IB = 10 -25 25 -0.1 Ta = 100C 25 -25 10 -1 -10 COLLECTOR CURRENTIC (mA) -100 -0.01 -1 -10 COLLECTOR CURRENT IC (mA) -100 RN2108MFV 1000 hFE - IC -1 RN2108MFV VCE(sat) - IC 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) DC CURRENT GAIN hFE COMMON EMITTER VCE = -5 V Ta = 100C COMMON EMITTER IC / IB = 10 -25 25 -0.1 Ta = 100C 25 -25 10 -1 -10 COLLECTOR CURRENTIC (mA) -100 -0.01 -1 -10 COLLECTOR CURRENT IC (mA) -100 RN2109MFV 1000 hFE- IC -1 RN2109MFV VCE(sat) - IC Ta = 100C 100 -25 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) COMMON EMITTER VCE = -5 V DC CURRENT GAIN hFE COMMON EMITTER IC / IB = 10 25 -0.1 Ta = 100C -25 25 10 -1 -10 COLLECTOR CURRENTIC (mA) -100 -0.01 -1 -10 COLLECTOR CURRENT IC (mA) -100 4 2005-03-30 RN2107MFVRN2109MFV Type Name Marking RN2107MFV RN2108MFV RN2109MFV 5 2005-03-30 RN2107MFVRN2109MFV RESTRICTIONS ON PRODUCT USE * * The information contained herein is subject to change without notice. 030619EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. * * * 6 2005-03-30 |
Price & Availability of RN2107MFV
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |