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| Si5855DC Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) -20 FEATURES ID (A) -3.6 -3.0 -2.4 rDS(on) (W) 0.110 @ VGS = -4.5 V 0.160 @ VGS = -2.5 V 0.240 @ VGS = -1.8 V D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible APPLICATIONS D Charging Circuit in Portable Devices SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.375 V @ 1 A IF (A) 1.0 S K 1206-8 ChipFETr 1 A K K D D A S G G Marking Code JB XXX Lot Traceability and Date Code Bottom View Part # Code D P-Channel MOSFET A Ordering Information: Si5855DC-T1 Si5855DC-T1--E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec -20 20 "8 -3.6 -2.6 -10 -1.8 1.0 7 2.1 1.1 1.9 1.0 Steady State Unit V -2.7 -1.9 -0.9 A 1.1 0.6 1.1 0.56 -55 to 150 260 _C W Notes a. Surface Mounted on 1" x1" FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72232 S-40932--Rev. B, 17-May-04 www.vishay.com 1 Si5855DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t v 5 sec Junction-to-Ambienta J ti t A bi t Steady St t St d State Device MOSFET Schottky MOSFET Schottky MOSFET Schottky Symbol Typical 50 54 Maximum 60 65 110 115 40 40 Unit RthJA 90 95 _C/W Junction-to-Foot Junction to Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Steady State RthJF 30 30 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 85_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -2.7 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -2.2 A VGS = -1.8 V, ID = -1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -2.7 A IS = -0.9 A, VGS = 0 V -10 0.095 0.137 0.205 7 -0.8 -1.2 0.110 0.160 0.240 S V W -0.45 -1.0 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -0.9 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W VDS = -10 V, VGS = -4.5 V, ID = -2.7 A , , 5.1 1.2 1.0 16 30 30 27 20 25 45 45 40 40 ns 7.7 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1 A IF = 1 A, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 85_C Vr = 20 V, TJ = 125_C Vr = 10 V Min Typ 0.34 0.255 0.05 2 10 90 Max 0.375 0.290 0.500 20 100 Unit V Maximum Reverse Leakage Current g Junction Capacitance www.vishay.com Irm CT mA pF 2 Document Number: 72232 S-40932--Rev. B, 17-May-04 Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 3 V 8 I D - Drain Current (A) 2.5 V I D - Drain Current (A) 8 10 TC = -55_C 25_C MOSFET Transfer Characteristics 6 2V 4 6 125_C 4 2 1.5 V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 VGS = 1.8 V r DS(on) - On-Resistance ( W ) 0.5 C - Capacitance (pF) 600 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 0 0 Crss 4 VGS = 2.5 V VGS = 4.5 V Ciss 800 Capacitance 400 200 Coss 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.7 A 4 rDS(on) - On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.7 A 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72232 S-40932--Rev. B, 17-May-04 www.vishay.com 3 Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.4 MOSFET On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) ID = 2.7 A 0.3 I S - Source Current (A) TJ = 150_C 0.2 TJ = 25_C 0.1 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 -0.1 -0.2 -50 10 Power (W) 30 50 Single Pulse Power 40 20 -25 0 25 50 75 100 125 150 0 10-4 10-3 10-2 10-1 Time (sec) 1 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area IDM Limited 10 I D - Drain Current (A) rDS(on) Limited P(t) = 0.001 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc www.vishay.com 4 Document Number: 72232 S-40932--Rev. B, 17-May-04 Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance MOSFET Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 100 10 I R - Reverse Current (mA) 1 0.1 0.01 0.001 20 V 10 V I F - Forward Current (A) 10 SCHOTTKY Forward Voltage Drop 1 TJ = 150_C TJ = 25_C 0.0001 -50 -25 0 25 50 75 100 125 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 TJ - Junction Temperature (_C) Document Number: 72232 S-40932--Rev. B, 17-May-04 VF - Forward Voltage Drop (V) www.vishay.com 5 Si5855DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 600 500 400 300 200 100 0 0 4 8 12 16 20 SCHOTTKY Capacitance CT - Junction Capacitance (pF) VKA - Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 95_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 6 Document Number: 72232 S-40932--Rev. B, 17-May-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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