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SSM3J16TE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J16TE
High Speed Switching Applications Analog Switch Applications
Unit: mm * * Small package Low on-resistance : Ron = 8 (max) (@VGS = -4 V) : Ron = 12 (max) (@VGS = -2.5 V) : Ron = 45 (max) (@VGS = -1.5 V)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating -20 10 -100 -200 100 150 -55~150 Unit V V mA mW C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
1: Gate 2: Source 3: Drain
Note:
JEDEC Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1B1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
3
Equivalent Circuit (top view)
3
DT
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3J16TE
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 10 V, VDS = 0 ID = -0.1 mA, VGS = 0 VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -10 mA ID = -10 mA, VGS = -4 V Drain-Source ON resistance RDS (ON) ID = -10 mA, VGS = -2.5 V ID = -1 mA, VGS = -1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDD = -3 V, ID = - 10 mA, VGS = 0 ~ -2.5 V VDS = -3 V, VGS = 0, f = 1 MHz MIN. -20 -0.6 25 TYP. 6 8 18 11 3.7 10 130 190 MAX. 1 -1 -1.1 8 12 45 pF pF pF ns UNIT A V A V mS

Switching Time Test Circuit
(a) Test circuit
0 IN 50 RL VDD -2.5 V 90% OUT
(b) VIN
0V
10%
-2.5V
10 s
(c) VOUT
VDS (ON)
90% 10% tr ton toff tf
VDD = -3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C
VDD
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device.
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SSM3J16TE
ID - VDS
-250 Common Source -200 -10 -4 Ta = 25C -3 -150 -100 Ta = 100C -10 25C -1 -1000 Common Source VDS = -3 V -2.7 -2.5 -2.3 -100 -2.1 -1.9 -50 -1.7 VGS = -1.5 V 0 0 -0.5 -1 -1.5 -2 -0.01 0 -1
ID - VGS
(mA)
ID
Drain current
Drain current
ID
(mA)
-25C
-0.1
-2
-3
-4
Drain - Source voltage
VDS
(V)
Gate - Source voltage
VGS (V)
RDS (ON) - ID
RDS (ON) - VGS
20 1.8 Common Source ID = -1 mA
Drain - Source on-resistance RDS (ON) ()
25
Drain - Source on-resistance RDS (ON) ()
VGS = -1.5 V
1.6 1.4 1.2 10 8 6 .4 2 -25 0 -2 -4 -6 -10 Ta=100
20
15 -2.5 V
10
25
5
-4 V
0 -1
-10
-100
-1000
0
-8
Drain current
ID
(mA)
Gate - Source voltage
VGS (V)
RDS (ON) - Ta
40 35 30 25 20 15 10 5 0 -25 -2.5 V, -10mA VGS =-1.5 V, ID=-1mA -2
Vth - Ta Vth (V)
-1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 100 125 150 Common Source ID = -0.1 mA VDS = -3 V
Common Source
Drain - Source on-resistance RDS (ON) ()
-4V, -10mA 0 25 50 75 100 125 150
Ambient temperature Ta
(C)
Gate threshold voltage
Ambient temperature Ta
(C)
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SSM3J16TE
Yfs - ID
1000 -250
IDR - VDS (mA)
Common Source VDS =-3 V Ta = 25C Common Source VGS = 0 V Ta = 25C D IDR S -100
Yfs
500 300
-200
Forward transfer admittance ( S)
100 50 30
IDR
10 5 3
Drain reverse current
-150
G
-50
1 -1
-10
-100
-1000
0 0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain current
ID
(mA)
Drain - Source
VDS
(V)
c - VDS
200 Common Source VGS = 0 V f = 1 MHz Ta = 25C 10000 5000 3000
t - ID
Common Source VDD = -3 V VGS = 0~-2.5 V Ta = 25C
(ns)
(pF)
toff 1000
100
t
C
Switching time
500 300
tf
Capacitance
10
Ciss Coss
100 50 30
ton tr
1 -0.1
Crss -1 -10 -100 10 -0.1 -1 -10 -100
Drain- Source voltage VDS
(V)
Drain current ID
(mA)
PD - Ta
250 Mounted on FR4 board (25.4mmX25.4mmX1.6t CU Pad:0.6mm2X3
(mW) PD Power dissipation
200
150
100
50
0 0
20
40
60
80
100
120
140
160
Ambient temperature
Ta
(C)
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SSM3J16TE
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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