 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-15L TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.0dBm at 10.7GHz to 11.7GHz n HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3 Order Intermodulation Distortion Drain Current Channel Temperature Rise rd SYMBOL P1dB G1dB IDS1 G CONDITIONS UNIT dBm MIN. 41.0 6.0 -42 TYP. MAX. 42.0 7.0 4.5 31 -45 4.5 5.5 0.8 5.5 100 VDS= 9V dB A dB % f = 11.7 to 12.7GHz add IM3 IDS2 Tch Two-tone Test Po=30.0 dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) dBc A C Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145A Channel to Case UNIT mS V A V C/W MIN. -1.5 -5 TYP. MAX. 3000 -3.0 10.0 2.0 -4.5 11.5 2.5 gm VGSoff IDSS VGSO Rth(c-c) u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product Rev. Oct. 2006 TIM1011-15L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 11.5 60.0 175 -65 +175 PACKAGE OUTLINE (2-11C1B) 2.0 MIN. Unit in mm 4-R3.0 (1) (2) (2) (3) 0.60.15 17.00.3 21.5 MAX.. 0.1 -0.0 +0.1 0.2 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 1.70.3 2.60.3 5.0 MAX. 11.0 MAX. 2.0 MIN. 12.90.2 3.20.3 (1) Gate (2) Source (3) Drain TIM1011-15L RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V 44 IDS4.5A Pin=35.0 dBm 43 Pout(dBm) 42 41 40 10.7 11.2 11.7 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 45 freq.=11.7GHz 44 43 42 VDS=9V IDS4.5A Pout 50 40 Pout(dBm) 41 40 39 38 37 36 29 31 33 35 37 10 30 add 20 Pin(dBm) 3 add(%) TIM1011-15L Power Dissipation(PT) vs. Case Temperature(Tc) 60 PT(W) 30 0 0 40 80 Tc( C ) 120 160 200 IM3 vs. Output Power Characteristics -10 VDS=9V -20 freq.=11.7GHz f=5MHz -30 IM3(dBc) -40 -50 -60 24 26 28 30 32 34 Pout(dBm) @Single carrier level 4 |
Price & Availability of TIM1011-15L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |