View IRGSL6B60KPBF_4161531.PDF datasheet online --- IC-ON-LINE

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PD - 95644A
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Low VCE (on) Non Punch Through IGBT Technology. * 10s Short Circuit Capability. * Square RBSOA. * Positive VCE (on) Temperature Coefficient. * Lead-Free.
C
IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPBF
VCES = 600V IC = 7.0A, TC=100C
G E
tsc > 10s, TJ=150C
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ. = 1.8V
TO-220AB IRGB6B60K
D2Pak IRGS6B60K
TO-262 IRGSL6B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
600 13 7.0 26 26 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V A
V W
C
Thermal Resistance
Parameter
RJC RCS RJA RJA Wt Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight
Min.
--- --- --- --- ---
Typ.
--- 0.50 --- --- 1.44
Max.
1.4 --- 62 40 ---
Units
C/W
g
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IRGB/S/SL6B60KPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on) VGE(th)
VGE(th)/TJ
gfe ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 --- Temperature Coeff. of Breakdown Voltage --- 0.3 Collector-to-Emitter Saturation Voltage 1.5 1.80 --- 2.20 Gate Threshold Voltage 3.5 4.5 Temperature Coeff. of Threshold Voltage --- -10 Forward Transconductance --- 3.0 Zero Gate Voltage Collector Current --- 1.0 --- 200 Gate-to-Emitter Leakage Current --- ---
Max. Units Conditions --- V VGE = 0V, IC = 500A --- V/C VGE = 0V, IC = 1.0mA, (25C-150C) 2.20 V IC = 5.0A, VGE = 15V 2.50 IC = 5.0A,VGE = 15V, TJ = 150C 5.5 V VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.0mA, (25C-150C) --- S VCE = 50V, IC = 5.0A, PW=80s 150 A VGE = 0V, VCE = 600V 500 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V
Ref.Fig.
5, 6,7 8,9,10 8,9,10 11
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- IC = 5.0A --- nC VCC = 400V --- VGE = 15V 210 J IC = 5.0A, VCC = 400V 245 VGE = 15V,R G = 100, L =1.4mH 455 Ls = 150nH TJ = 25C 34 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100 L =1.4mH 230 ns Ls = 150nH, TJ = 25C 22 260 IC = 5.0A, VCC = 400V 300 J VGE = 15V,R G = 100, L =1.4mH 560 Ls = 150nH TJ = 150C 37 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100 L =1.4mH 255 ns Ls = 150nH, TJ = 150C 27 --- VGE = 0V --- pF VCC = 30V --- f = 1.0MHz TJ = 150C, IC = 26A, Vp =600V FULL SQUARE VCC = 500V, VGE =+15V to 0V,RG = 100 s TJ = 150C, Vp =600V, RG = 100 10 --- --- VCC = 360V, VGE = +15V to 0V Typ. 18.2 1.9 9.2 110 135 245 25 17 215 13.2 150 190 340 28 17 240 18 290 34 10
Ref.Fig.
17 CT1 CT4
CT4
CT4 12,14
WF1WF2
13, 15 CT4 WF1 WF2 16 4 CT2 CT3 WF3
Note to are on page 13
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IRGB/S/SL60B60KPbF
15 100 90 80 10
Ptot (W) IC (A)
70 60 50 40 30 20 10
5
0 0 20 40 60 80 100 120 140 160 T C (C)
0 0 20 40 60 80 100 120 140 160 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
10 10 s
IC (A)
IC A)
10
1 100 s DC 1ms 0.1 1 10 100 VCE (V) 1000 10000
1
0 10 100 1000
VCE (V)
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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IRGB/S/SL6B60KPbF
20 18 16 14
ICE (A)
20 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V
ICE (A)
18 16 14 12 10 8 6 4 2 0
12 10 8 6 4 2 0 0
VGE VGE VGE VGE VGE
= 18V = 15V = 12V = 10V = 8.0V
1
2
3 VCE (V)
4
5
6
0
1
2
3 VCE (V)
4
5
6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
20 18 16 14
ICE (A)
12 10 8 6 4 2 0 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
1
2
3 VCE (V)
4
5
6
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s
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IRGB/S/SL60B60KPbF
20 18 16 14
VCE (V) VCE (V)
20 18 16 14 ICE = 3.0A ICE = 5.0A ICE = 10A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 3.0A ICE = 5.0A ICE = 10A
12 10 8 6 4 2 0
Fig. 8 - Typical VCE vs. VGE TJ = -40C
Fig. 9 - Typical VCE vs. VGE TJ = 25C
20 18 16 14
VCE (V)
40 35 30
ICE = 3.0A ICE = 5.0A ICE = 10A
T J = 25C T J = 150C
10 8 6 4 2 0 5 10 VGE (V)
ICE (A)
12
25 20 15 10 5 T J = 150C T J = 25C 0 5 10 VGE (V) 15 20
15
20
0
Fig. 10 - Typical VCE vs. VGE TJ = 150C
Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
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IRGB/S/SL6B60KPbF
700 600 500
Energy (J)
1000
tdOFF
Swiching Time (ns)
EON
100
400 300 200 100 0 0 5 10 IC (A) 15 20 EOFF
tF tdON
10
tR
1 0 5 10 15 20
IC (A)
Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE= 15V
250
1000
200
EOFF
Swiching Time (ns)
100
tdOFF
Energy (J)
150
EON
100
tdON tR tF
10
50
0 0 50 100 150 200
1 0 50 100 150 200
R G ()
RG ()
Fig. 14 - Typ. Energy Loss vs. RG TJ = 150C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG TJ = 150C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V
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IRGB/S/SL60B60KPbF
1000
16
Cies
14 300V 12 400V
Capacitance (pF)
100
10
Coes
VGE (V)
8 6 4 2 0
Cres
10
1 1 10 100
0
5
10
15
20
VCE (V)
Q G , Total Gate Charge (nC)
Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 17 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600H
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.01 0.02
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.1
J
Ri (C/W) i (sec) 0.708 0.00022 0.447 0.219 0.00089 0.01037
1
2
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-4 1E-3 1E-2 1E-1
0.001 1E-6 1E-5
t1 , Rectangular Pulse Duration (sec)
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGB/S/SL6B60KPbF
L
L DUT
0
VCC
80 V
+ -
DUT
480V
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT
Driver
DC
L
360V
- 5V DUT / DRIVER
Rg
DUT
VCC
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
VCC ICM
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
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IRGB/S/SL60B60KPbF
450 400 350 300 250 VCE (V) tf 4
5% V CE 5% ICE 90% ICE
9 8 7 6
500
25
400
20
300
15
TEST CURRENT
5 ICE (A)
VCE (V) 200
200 150 100 50 0 -50 -0.20
Eoff Loss
90% test current
10
3 2 1
100 tr 0
10% test current 5% V CE
5
0 Eon Loss
0 -1 0.80
-100 16.00 -5 16.40
0.30 time(s)
16.10
16.20 time (s)
16.30
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
500
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
50
400 VCE 300 VCE (V) ICE
40
30 ICE (A)
200
20
100
10
0 -5.00
0.00
5.00 time (S)
10.00
0 15.00
Fig. WF3- Typ. S.C Waveform @ TC = 150C using Fig. CT.3
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ICE (A)
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IRGB/S/SL6B60KPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
10
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IRGB/S/SL60B60KPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T H IS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T H E AS S E MB LY L INE "L" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E RNAT IONAL RE CT IF IE R LOGO AS S E MB L Y L OT CODE P AR T NUMB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L
OR
INT E R NAT IONAL R E CT IF IE R LOGO AS S E MBLY LOT CODE PAR T NU MB ER F 530S DAT E CODE P = DE S IGNAT E S LE AD-F R E E PR ODU CT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MBL Y S IT E CODE
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IRGB/S/SL6B60KPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMP L E : T H IS IS AN IR L 3103L L OT COD E 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L IN E "C" N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT COD E PAR T NU MB E R
DAT E COD E YE AR 7 = 1997 WE E K 19 L INE C
OR
IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T NU MB E R DAT E CODE P = DE S IGN AT E S L E AD -F R E E P R ODU CT (OPT IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE
12
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IRGB/S/SL60B60KPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Notes: VCC= 80% (VCES), VGE =15V, L = 28H, RG = 22 This is only applied to TO-220AB package This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE. TO-220 package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/04
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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