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| MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4547MD BLOCK DIAGRAM 2 3 4 RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 450 to 470 MHz range. 1 5 6 FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V) * Pout>38dBm @ VDD=7.2V, Pin=19dBm Idq1=30mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.) , @ VDD=7.2V, Pout=38dBm (Pin adjust.), Idq1=30mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.) * IMD3<-25dBc @ VDD=7.2V, Pout (average) =35dBm(Pin adjust.) Two tone test at 1KHz separation Idq1=30mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.) * Broadband Frequency Range: 450-470MHz * Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V * Module Size: 30 x 10 x 5.4 mm * T>34% 1 RF Input (Pin) 2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL Vgg1 3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL Vgg2 4 Drain Voltage (VDD), Battery 5 RF Output (Pout) 6 RF Ground (Case) PACKAGE CODE: H46S RoHS COMPLIANT * RA03M4547MD-101 is a RoHS compliant products. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA03M4547MD-101 SUPPLY FORM Antistatic tray, 25 modules/tray RA03M4547MD MITSUBISHI ELECTRIC 1/7 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M4547MD MAXIMUM RATINGS (Tcase=+25C, unless otherwise specified) SYMBOL PARAMETER VDD VGG1 VGG2 Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<3.5V VDD<7.2V, Pin=0mW VDD<7.2V, Pin=0mW f=450-470MHz, ZG=ZL=50 RATING 9.2 4 4 100 10 -30 to +90 -40 to +110 UNIT V V V mW W C C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER f Pout T 2fo in IGG IMD3 IMD5 Frequency Range Output Power Total Efficiency 2 nd CONDITIONS VDD=7.2V,Pin(Single Carrier)=+19dBm, Idq1=30mA(Vgg1 adjust.), Idq2=1A(Vgg2 adjust.) VDD=7.2V,Pout (Single Carrier) =38dBm (,Pin adjust.), Idq1=30mA(Vgg1 adjust.), Idq2=1A(Vgg2 adjust.) MIN 450 38 34 TYP MAX 470 UNIT MHz dBm % Harmonic -25 4.4:1 1 dBc -- mA Input VSWR Gate Current 3 Inter Modulation Distortion 5 Inter Modulation Distortion th rd VDD=7.2V,Pout (average)=35dBm(Pin adjust.), Idq1=30mA(Vgg1 adjust.), Idq2=1A(Vgg2 adjust.) , Two tone test at 1KHz separation VDD=7.2V,Pout (Single Carrier)=35dBm(Pin adjust.), Across specified frequency range Idq1=30mA(Vgg1 adjust.), Idq2=1A(Vgg2 adjust.) Vdd=6.0/7.2/9.2V, Idq1=30mA(Vgg1 adjust), Idq2=1A(Vgg2 adjust) , Po(Single Carrier)=15-38dBm(Pin control) LOAD VSWR=2:1(All Phase),Zg=50 Vdd=9.2V, Pout(Single Carrier)=39dBm (Pin adjust.), LOAD VSWR=2:1(All Phase),Zg=50 , Idq1=30mA(Vgg1 adjust.@Vdd=7.2V), Idq2=1A(Vgg2 adjust.@Vdd=7.2V) -25 -25 dBc dBc GV Gain Variation 0 4 dB -- Stability No parasitic oscillation -- -- Load VSWR Tolerance No degradation or destroy -- All parameters, conditions, ratings, and limits are subject to change without notice. RA03M4547MD MITSUBISHI ELECTRIC 2/7 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M4547MD RA03M4547MD IMD3,IMD5 vs. Po TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) RA03M4547MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=450MHz, Idq 1st stager=30mA Idq Final Stage=1.0A 50 45 40 Effi(%),Gp(dB) 35 30 25 20 15 10 Effi Gp T c=+25deg.C, Vdd=7.2V f=450MHz, Idq 1st stager=30mA Idq Final Stage=1.0A 0 -10 IMD3,IMD5(dBc) -20 -30 -40 -50 -60 IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) 5 0 10 15 20 25 30 35 40 -70 15 20 25 30 35 40 Po(single carrier)(dBm) Po(2tone ave rage)(dBm) RA03M4547MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=460MHz, Idq 1st stager=30mA Idq Final Stage=1.0A 50 Effi 45 40 Effi(%),Gp(dB) 35 30 25 20 15 10 Gp RA03M4547MD IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=460MHz, Idq 1st stager=30mA Idq Final Stage=1.0A 0 -10 IMD3,IMD5(dBc) -20 -30 -40 -50 -60 IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) 5 0 10 15 20 25 30 35 40 -70 15 20 25 30 35 40 Po(single carrier)(dBm) Po(2tone ave rage)(dBm) RA03M4547MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=470MHz Idq 1st stager=30mA Idq Final Stage=1.0A 50 Effi 45 40 Effi(%),Gp(dB) 35 30 25 20 15 10 Gp RA03M4547MD IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=470MHz Idq 1st stager=30mA Idq Final Stage=1.0A 0 IMD3(Delta freq=1KHz) -10 IMD5(Delta freq=1KHz) IMD3,IMD5(dBc) -20 -30 -40 -50 -60 5 0 10 15 20 25 30 35 40 -70 15 20 25 30 35 40 Po(single carrier)(dBm) Po(2tone ave rage)(dBm) RA03M4547MD MITSUBISHI ELECTRIC 3/7 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M4547MD OUTLINE DRAWING (mm) 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA03M4547MD MITSUBISHI ELECTRIC 4/7 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M4547MD TEST BLOCK DIAGRAM (TWO TONE) TEST BLOCK DIAGRAM (SINGLE CARRIER) 1 RF Input (Pin) 2 Gate Voltage (VGG1) 3 Gate Voltage (VGG2) 4 Drain Voltage (VDD) 5 RF Output (Pout) 6 RF Ground (Case) RA03M4547MD MITSUBISHI ELECTRIC 5/7 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M4547MD EQUIVALENT CIRCUIT 2 3 4 1 5 6 1 RF Input (Pin) 2 Gate Voltage (VGG1) 3 Gate Voltage (VGG2) 4 Drain Voltage (VDD) 5 RF Output (Pout) 6 RF Ground (Case) RA03M4547MD MITSUBISHI ELECTRIC 6/7 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M4547MD Output Power Adjust.: Depending on linearity, the following two methods are recommended to adjust. the output power: a) Non-linear FM modulation: By the gate voltage (VGG). b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain's quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module. b) Is the load impedance ZL=50. c) Is the source impedance ZG=50. Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA03M4547MD MITSUBISHI ELECTRIC 7/7 31 Jan 2007 |
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