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| S1PHB15 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 2 1 6 4 3 S1PHB15-08 S1PHB15-12 S1PHB15-14 S1PHB15-16 S1PHB15-18 8 Symbol IdAV TK=85oC, module IdAVM module IFRMS, ITRMS per leg TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0 2 Test Conditions Maximum Ratings 15 21 15 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=50A 190 210 170 190 160 180 140 145 150 A It TVJ=45oC VR=0 TVJ=TVJM VR=0 A2s TVJ=125oC f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.3A diG/dt=0.3A/us (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA A/us non repetitive, IT=1/2IdAV 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 t=1min t=1s 3000 3600 2-2.5 18-22 50 V/us W W V o TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us C V~ Nm lb.in. g Mounting torque (M5) (10-32 UNF) S1PHB15 Single Phase Half Controlled Bridge With Free Wheeling Diode Symbol IR, ID VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq Qr RthJC RthJK dS dA a TVJ=TVJM; TVJ=TVJM; tG=30us; IG=0.3A; diG/dt=0.3A/us VD=6V; VD=6V; TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC TVJ=125oC VD=2/3VDRM VD=2/3VDRM TVJ=25 C TVJ=-40oC TVJ=125oC o o Test Conditions TVJ=TVJM; VR=VRRM; VD=VDRM TVJ=25oC IT, IF=45A; TVJ=25oC For power-loss calculations only (TVJ=125oC) Characteristic Values 5 0.3 2.8 1.0 40 1.0 1.2 65 80 50 0.2 5 150 200 100 100 2 typ. 150 75 2.4 0.6 3.0 0.75 12.6 6.3 50 1000 T VJ = 25C Unit mA V V m V mA V mA mA mA us us uC K/W K/W mm mm m/s2 TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.3A; diG/dt=0.3A/us TVJ=125oC; IT=15A; tp=300us; VR=100V VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us per thyristor(diode); DC current per module per thyristor(diode); DC current per module Creepage distance on surface Creepage distance in air Maximum allowable acceleration 10 V VG 1: IG T , T VJ = 125C 2: IG T , T VJ = 25C 3: IG T , T VJ = -40C o s tgd 100 typ. Limit 1 1 2 3 6 4 5 10 4: P GAV = 0.5 W IG D, T VJ = 125C 5: P GM = 1 W 6: P GM = 10 W 0.1 1 10 100 1000 IG mA 1 10 100 IG mA 1000 F ig. 1 G ate trigger range F ig. 2 G ate controlled delay time tgd S1PHB15 Single Phase Half Controlled Bridge With Free Wheeling Diode F ig. 3 S urge overload current per chip I F S M: C res t value, t: duration F ig. 4 I 2t vers us time (1-10 ms ) per chip F ig. 5 Max. forward current at heats ink temperature F ig. 6 P ower dis s ipation vers us direct output current and ambient temperature C ons tants for Z thJ K calculation: i 1 2 3 R thi (K /W) 0.34 1.16 1.5 ti (s ) 0.0344 0.12 0.5 F ig. 7 T rans ient thermal impedance junction to heats ink per chip |
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