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| BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation 1N4448 REVERSE VOLTAGE : 75 V CURRENT: 0.15 A DO - 35(GLASS) MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. MAXIMUM RATINGS 1N4448 Reverse voltage Peak reverse voltage Average forw ard rectified current Half w ave rectification w ith resist.load @ TA =25 and f 50Hz Forw ard surge current @ t<1s and TJ =25 Pow er dissipation @ TA =25 Junction temperature Storage temperature range UNITS V V mA mA mW VR VRM IAV IFSM Ptot TJ TSTG MIN 0.62 100.0 0.45 75.0 100.0 1501) 500.0 5001) 175 -55 --- +175 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage Leakage current @ V R=20V @ V R=75V @ V R=20V TJ =150 Capacitance @ V F=V R=0V Reverse breakdow n voltage tested w ith 100A pulses Reverse recovery time from IF=10mA to IR=1mA, V R=6V. RL=100. Thermal resistance junction to ambient Rectification efficiency @ f=100MHz,V RF=2V @ IF=5mA @ IF=10mA VF IR CJ V(BR)R trr RJA TYP - MAX 0.72 1.0 25 5 50 4 4 350 1) - UNITS V V nA A A pF V ns K/W - 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. www.galaxycn.com Document Number 0268003 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE 1N4448 FIG.2 -- FORWARD CHARACTERISTICS mW 1000 900 800 mA 10 3 10 2 Ptot 700 600 500 400 300 200 100 0 0 100 200ae 10 -2 IF 10 TJ=100 TJ=25 1 10 -1 0 1 TA VF 2V FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T T=1/fp IFRM IFRM 10 n=0 tp 0.1 1 T 0.2 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp www.galaxycn.com Document Number 0268003 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT 1N4448 FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 TJ=25 f=1MHz 1.0 D.U.T. 60 VRF=2V 2nF 5K VO Ctot(VR) Ctot(OV) 0.9 0.8 0.7 0 2 4 6 VR 8 10V FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 4 10 4 TJ=25ae f=1kHz 10 3 10 3 r 10 2 F 10 2 10 10 V R =50V 1 1 10 -2 10 -1 1 10 10 2 mA 0 100 2 0 0 ae IF www.galaxycn.com Document Number 0268003 BLGALAXY ELECTRICAL 3. |
Price & Availability of 1N4448
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