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| BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES Power dissipation.(PC=100mW) Production specification 2SC4215W Pb Lead-free APPLICATIONS Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. 2SC4215W Marking QR/QO/QY SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value 40 Units V Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous 30 4 20 V V mA Collector Dissipation Junction and Storage Temperature 150 -55~150 mW ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTF041 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-base time constant Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE CC.rbb' fT Test conditions IC=100A,IE=0 IC=1mA,IB=0 IE=100A,IC=0 VCB=4V,IE=0 VEB=4V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=1mA VCE=6V, IE= 1mA Production specification 2SC4215W MIN 40 30 4 0.1 0.5 40 200 25 260 550 ps MHz TYP MAX UNIT V V V A A CLASSIFICANTION OF hFE Marking hFE QR 90-180 QO 135-270 QY 200-400 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTF041 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification 2SC4215W SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE INFORMATION Device 2SC4215W Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF041 Rev.A www.galaxycn.com 3 |
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