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AEGIS
SEMICONDUTORES LTDA.
A5A:450.XX
VOLTAGE RATINGS
Part Number A5A:450.14 A5A:450.16 A5A:450.18 A5A:450.20 A5A:450.22 A5A:450.24 A5A:450.26 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 175OC 1400 1600 1800 2000 2200 2400 2600 TJ = -40 to 0 C 1400 1600 1800 2000 2200 2400 2500
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VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 175OC 1500 1700 1900 2100 2300 2500 2700
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 360 125 700 5.95 IFSM Max. Peak non-rep. surge current 6.48 kA 7.02 7.72 161 I2t Max. I2t capability 175 228 248 I2t1/2 Max. I2t1/2 capability F Mounting Force 2720 450 kA2s1/2 N.m kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 175OC, no voltage applied after surge. Initial T J = 175OC, no voltage applied after surge. Initial T J = 175OC, rated VRRM applied after surge. UNITS
O O
NOTES O 180 half sine wave
C C C
A
O
IF(RMS) Nom. RMS current
A 50 Hz half cycle sine wave 60 Hz half cycle sine wave
Initial T J = 175 C, rated VRRM applied after surge.
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t = 8.3 ms Initial T J = 175O C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
AEGIS
SEMICONDUTORES LTDA.
A5A:450.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.75 --------25 --------57(2.0) DO-200AA MAX. UNITS 1.99 0.83 0.864 0.876 0.658 40 0.080 0.092 0.094 0.03 --O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 1131A. O TJ = 175 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. Rated VRRM
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V V mW mA
C/W DC operation, double side C/W 180 O sine wave, double side C/W 120 rectangular wave, duble side
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O
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C/W Mtg. Surface smooth, flat and greased. -----
g(oz.) JEDEC
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)
170 160 150 140 130
30
Maximum Allowable Case Temperature
170 160 150 140 130
30
120 110 100 90 80 0
60 90 120 180
120 110 100 0 50 100 150 200
60 90 120 180
DC
250
300
350
400
450
500
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
*Sinusoidal waveform
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:450.XX
8000
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
30
Maximum Average Forward Power Loss
6000
30
Maximum Average Forward Power Loss (W)
7000 6000 5000 4000 3000
90 60
5000
4000
60
3000
90
2000 1000 0 0 100 200 300 400 500 600
120 180
2000
120 180
1000
DC
700
800
0 0 100 200 300 400 500 600 700 800
*Rectangular waveform
*Sinusoidal waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
10000
Forward Voltage Drop
1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
2.0 2.5 3.0 3.5
Instantaneous Forward Current (A)
0.1
1000
0.01
175
100 1.0
25C
1.5
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:450.XX
TO-200AA
Fig. 7 - Outline Characteristics

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