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CHU2277A
RoHS COMPLIANT
W-band Multifunction : Multiplier / MPA
GaAs Monolithic Microwave IC Description
The CHU2277A is a W-band monolithic multifunction which integrates a frequency multiplier, a four-stage amplifier and a power divider. The frequency multiplier is based on an active transistor and allows to operate at low input level with a reduced power consumption. This chip provides two outputs at 77GHz, the main one is for the transmission path and the auxiliary one for the receiving mixer (s) LO signal. All the active devices are internally self biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured with the P-HEMT process : 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
+V -V OUT1 IN x2 OUT2
W-band multifunction block-diagram
20 18 Output power (dBm) 16 14 12 10 8 6 4 2 0 75 75,5 76 76,5 77 77,5 78 78,5 79
OUT1
Main Features
n n n n n n n n n n n Wide operating frequency range Low input power : 5dBm typical High output power (OUT1) Auxiliary output power (OUT2) Low AM noise High temperature range On-chip self biasing Automatic assembly oriented Low DC power consumption BCB layer protection Chip size : 4.65 x 1.6 x 0.1mm
OUT2
Output frequency (GHz)
Typical output power characteristic Pin = 7dBm (on wafer measurement)
Main Characteristics
Tamb = +25C Symbol
F_in F_out P_out1 P_out2 Input frequency Output frequency Main output power Auxiliary output power
Parameter
Min
38 76
Typ
Max
38.5 77
Unit
GHz GHz dBm dBm
13 10
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. DSCHU2277A6013 - 13 Jan 06
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHU2277A
Electrical Characteristics
Full operating temperature range, used configuration" Symbol F_in F_out P_in P_out1 P_out2 Fin_rej S_rej
W-band Multiplier/MPA
according to section "Typical assembly and bias
An
Parameter Input frequency Output frequency Input power Output power (OUT1) (1) Output power (OUT2) (1) fundamental rejection (dBc/Pout1(2Fin)) Spurious rejection (dBc/Pin) 12.75 GHz 25.5 GHz 38.25 GHz 51 GHz 63.75 GHz 76.5 GHz 89.25 GHz 102 GHz Amplitude noise @ 1kHz (SSB) Amplitude noise @ 10kHz (SSB) Amplitude noise @ 100kHz (SSB) Amplitude noise @ 200kHz (SSB) Amplitude noise @ 1MHz (SSB) VSWR at input port (50) Positive supply voltage (2) Positive supply current Negative supply voltage (2) Negative supply current Operating temperature range
Min 38 76 0 11 8 45 40 40 35 50 40 15 40 50
Typ
5 13 10 55 50 50 45 60 50 20 50 60 -137 -145 -151 -153 -157 2:1 4.5 180 -4.5 14
Max 38.5 77 12 16 13
Unit GHz GHz dBm dBm dBm dBc dBc
VSWR_in +V +I -V -I Top
-132 -140 -146 -148 -152 2.5:1 4.6 240 -4.4 20 100
dBc/Hz
4.4 -4.6 -40
V mA V mA C
(1) Defined on load VSWR 1.5:1. (2) Negative supply voltage must be applied at least 1us before positive supply voltage.
Ref. DSCHU2277A6013 - 13 Jan 06
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band Multiplier/MPA
Absolute Maximum Ratings (1)
Symbol P_in +V -V +I -I Tstg
(1) (2)
CHU2277A
Parameter Input power (2) Positive supply voltage Negative supply voltage Positive supply current Negative supply current Storage temperature range
Values 13 5 -5 250 20 -55 to +155
Unit dBm V V mA mA C
Operation of this device above anyone of these parameters may cause permanent damage. Duration < 1s
Ref. DSCHU2277A6013 - 13 Jan 06
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHU2277A
Chip Mechanical Data and Pin References
W-band Multiplier/MPA
4 5 3
6
1455
2
1 8 12 11 10
530
7 9
8261A 75
Unit = m External chip size (layout size + dicing streets) = 4650 x 1600 35 Chip thickness = 100 +/- 10 HF Pads (2, 5,8) = 105 X 86 (BCB opening) DC Pads = 86 x 83 (BCB opening)
Pin number 1,3,4,6,7,9 11 2 5 8 10 12
Pin name
Description Ground : should not be bonded. If required, please ask for more information. Ground (optional) Input port Main output Auxiliary output Positive supply voltage Negative supply voltage
IN OUT1 OUT2 +V -V
Ref. DSCHU2277A6013 - 13 Jan 06
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band Multiplier/MPA
Typical Assembly and Bias Configuration
-strip line
CHU2277A
L_out1
4 5 6
L_in
3
2
-strip line
1 8
7 9
8261A
L_out2
-strip line
12
11
10
>= 120pF
>= 120pF
-V DC lines
+V
This drawing shows an example of assembly and bias configuration. All the transistors are internally self biased. An external capacitor is recommended for the positive and negative supply voltages. For the RF pads the equivalent wire bonding inductance (diameter=25m) have to be according to the following recommendation. Port IN (2) OUT1 (5) OUT2 (8) Equivalent inductance (nH) L_in = 0.32 L_out1 = 0.32 L_out2 = 0.32 Wire length (mm) (1) 0.4 0.4 0.4
(1) This value is the total length including the necessary loop from pad to pad. For a micro-strip configuration a hole in the substrate is necessary for chip assembly.
Ref. DSCHU2277A6013 - 13 Jan 06
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHU2277A
W-band Multiplier/MPA
As the connections at 77GHz (between MMIC and MMIC or between MMIC and external substrate) are critical, the transition matching network is split into two parts: one on MMIC and one on the external substrate. This choice allows to do, for OUT2 port, a direct connection between MMICs. For a connection to an external substrate a network is proposed on soft substrate for OUT1 and OUT2 ports. The following drawings gives the dimensions for a DUROID substrate (thickness=0.127mm, r=2.2).
Bonding area
Proposed matching network for a 50 transition between OUT1 and a strip line on DUROID substrate
Bonding area
Proposed matching network for a 50 transition between OUT2 and a strip line on DUROID substrate.
Ref. DSCHU2277A6013 - 13 Jan 06
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band Multiplier/MPA
CHU2277A
Ref. DSCHU2277A6013 - 13 Jan 06
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHU2277A
W-band Multiplier/MPA
Ordering Information
Chip form : CHU2277A98F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. DSCHU2277A6013 - 13 Jan 06 8/8 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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