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| HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode HUR2060CT VRSM V 600 VRRM V 600 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=135oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=0.9A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 2 x 10 50 0.1 0.1 -55...+175 175 -55...+150 60 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=10A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 60 0.25 1.42 2.10 2.5 0.5 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=100V; IF=12A; -diF/dt=100A/us; TVJ=100 C o 35 4.4 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 30 A 25 IF 20 15 10 0.4 5 0 0.0 0.2 0.0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 10 TVJ=150C TVJ=100C TVJ= 25C 1.4 T = 100C nC VJ V = 300V 1.2 R Qr 1.0 0.8 0.6 IF= 20A IF= 10A IF= 5A 40 TVJ= 100C A VR = 300V IRM 30 IF= 20A IF= 10A IF= 5A 20 0.5 1.0 1.5 VF 2.0 V 2.5 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 120 ns 110 TVJ= 100C VR = 300V Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR 15 VFR 2.0 1.2 us 0.9 tfr 1.5 Kf 1.0 IRM trr 100 IF= 20A IF= 10A IF= 5A tfr 90 10 0.6 0.5 Qr 80 5 TVJ= 100C IF = 10A 0.3 70 0.0 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.5578 0.4931 ti (s) 0.0052 0.0003 0.0169 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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