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PD - 96140
IRFH7932PBF
Applications
l l
HEXFET(R) Power MOSFET
Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems
VDSS 30V
RDS(on) max Qg 3.3m:@VGS = 10V 34nC
Benefits
l l l l l l l l
Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering
D D D D
S S S G
PQFN
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation g Power Dissipation g
Max.
30 20 25 20 104 200 3.4 2.2 0.03 -55 to + 150
Units
V
A
c
W W/C C
Linear Derating Factor Operating Junction and
g
Storage Temperature Range
Thermal Resistance
Parameter
RJC RJA Junction-to-Case
f
Typ.
--- ---
Max.
2.2 37
Units
C/W
Junction-to-Ambient
g
Notes through are on page 9
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03/03/08
1
IRFH7932PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 59 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.021 2.5 3.3 1.8 -5.9 --- --- --- --- --- 34 7.9 3.6 11 12 15 19 0.7 20 48 23 20 4270 830 420 --- --- 3.3 3.9
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A
2.35 V VDS = VGS, ID = 100A --- mV/C 1.0 150 100 -100 --- 51 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- A nA S
e e
VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 20A VDS = 15V VGS = 4.5V ID = 20A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V
nC
nC ns
ID = 20A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz Max. 16 20 Units mJ A
pF
Avalanche Characteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 21 33 4.2 A 200 1.0 32 50 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 20A, VGS = 0V TJ = 25C, IF = 20A, VDD = 15V Fig.16 di/dt = 300A/s
e
eASee
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH7932PBF
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
10
1
1
2.3V 60s PULSE WIDTH Tj = 150C
0.1
2.3V
0.01 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
100
ID = 25A VGS = 10V
1.5
T J = 150C
10
1
T J = 25C
1.0
0.1
VDS = 15V 60s PULSE WIDTH
1.0 2.0 3.0 4.0 5.0
0.01
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFH7932PBF
100000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
14 12 10 8 6 4 2 0 ID= 20A VDS= 24V VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss Crss
100 1 10 100
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100sec 1msec
T J = 150C
10
10
10msec
T J = 25C
1
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T A = 25C Tj = 150C Single Pulse 0 1 10 100
0.1
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFH7932PBF
30
VGS(th) Gate threshold Voltage (V)
25
2.0
ID , Drain Current (A)
20
1.6
ID = 100A
15
10
1.2
5
0 25 50 75 100 125 150
0.8 -75 -50 -25 0 25 50 75 100 125 150
T J , Ambient Temperature (C)
T J , Temperature ( C )
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
1
0.20 0.10 0.05 0.02 0.01
J J 1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.54874 2.05644 7.36536 6.44303
0.000128 0.023270 1.0678 38.4
i (sec)
0.1
1
2
3
4
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001 0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH7932PBF
RDS(on), Drain-to -Source On Resistance ( m)
16 14 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10
ID = 25A
EAS , Single Pulse Avalanche Energy (mJ)
70 60 50 40 30 20 10 0 25 50 75 100 125 150 ID 5.86A 6.91A BOTTOM 20.0A TOP
T J = 125C
T J = 25C
VGS, Gate-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
V DS V GS
RD
VDS
L
DRIVER
RG V10V GS Pulse Width 1 s Duty Factor 0.1
D.U.T.
+
-V DD
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 15a. Switching Time Test Circuit
90%
VDS
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
6
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IRFH7932PBF
D.U.T
Driver Gate Drive Period D= P.W. Period VGS=10V
+
P.W.
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Vds Vgs
Id
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
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7
IRFH7932PBF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL RECTIFIER LOGO 6
DATE CODE
ASSEMBLY SITE CODE (Per SCOP 200-002)
XXXX XYWWX XXXXX
PART NUMBER MARKING CODE
(Per Marking Spec.)
PIN 1 IDENTIFIER LOT CODE
(Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
8
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IRFH7932PBF
PQFN Tape and Reel
NOTES: (I) Measured from the centerline of the sprocket hole to the centerline of the pocket (II) Cumulative tolerance of 10 sprocket holes is +/- 0.20 (III) Measured from the centerline of the sprocket hole to the centerline of the pocket (IV) Other material available (V) Forming format: Flatbed (VI) Estimated maximum length = 93 meters / 22B3 reel
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.078mH, RG = 25, IAS = 20A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2008
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9

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