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| PD - 97132 IRGP4086PBF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25C c TJ max C 300 1.90 250 150 C V V A C G E G E C n-channel G G ate C C ollector TO-247AC E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N Max. 30 70 40 250 160 63 1.3 -40 to + 150 Units V A W W/C C Thermal Resistance Parameter RJC (IGBT) RCS RJA Typ. --- 0.24 --- 6.0 (0.21) Max. 0.8 --- 40 --- Units C/W g (oz) Thermal Resistance Junction-to-Case-(each IGBT) d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) d Weight www.irf.com 1 4/17/08 IRGP4086PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVCES Min. Typ. Max. Units --- 0.29 1.29 1.49 1.90 2.57 2.27 --- -11 2.0 5.0 100 --- --- 29 65 22 36 31 112 65 30 33 145 98 --- 1075 1432 2250 110 58 5.0 13 --- --- 1.46 1.67 2.10 2.96 --- 5.0 --- 25 --- --- 100 -100 --- --- --- -- -- -- -- -- -- -- -- --- --- --- --- --- --- --- nH --- pF ns J ns ns S nC nA V mV/C A V Conditions Collector-to-Emitter Breakdown Voltag 300 --- --- VCES/TJ Breakdown Voltage Temp. Coefficient --- VGE = 0V, ICE = 1 mA V V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 25A e VGE = 15V, ICE = 40A e VGE = 15V, ICE = 70A e VGE = 15V, ICE = 120A e VGE = 15V, ICE = 70A, TJ = 150C VCE = VGE, ICE = 500A VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 100C VCE = 300V, VGE = 0V, TJ = 150C VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15Ve IC = 25A, VCC = 196V RG = 10, L=200H, LS= 200nH TJ = 25C IC = 25A, VCC = 196V RG = 10, L=200H, LS= 200nH TJ = 150C VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V VCE = 30V = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 VCE(on) Static Collector-to-Emitter Voltage --- --- --- VGE(th) Gate Threshold Voltage 2.6 --- --- --- --- VGE(th)/TJ Gate Threshold Voltage Coefficient ICES Collector-to-Emitter Leakage Current IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse --- --- --- --- --- -- -- -- -- -- -- -- -- 100 --- --- Ciss Coss Crss LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance --- --- --- --- --- Notes: Half sine wave with duty cycle = 0.1, ton=2sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRGP4086PBF 240 VGE = 18V 200 160 ICE (A) 240 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V VGE = 18V 200 160 ICE (A) VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 120 80 40 0 0 4 8 VCE (V) 120 80 40 0 12 16 0 4 8 VCE (V) 12 16 Fig 1. Typical Output Characteristics @ 25C 240 VGE = 18V 200 160 ICE (A) Fig 2. Typical Output Characteristics @ 75C 240 VGE = 18V 200 160 ICE (A) VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 120 80 40 0 0 4 8 VCE (V) 120 80 40 0 12 16 0 4 8 VCE (V) 12 16 Fig 3. Typical Output Characteristics @ 125C 240 200 160 ICE (A) Fig 4. Typical Output Characteristics @ 150C 10 IC = 25A TJ = 25C TJ = 150C VCE (V) 8 6 120 80 40 0 2 4 6 8 10 12 14 16 VGE (V) TJ = 25C TJ = 150C 4 2 0 5 10 VGE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRGP4086PBF 80 70 IC, Collector Current (A) 300 Repetitive Peak Current (A) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 200 100 ton= 2s Duty cycle = 0.1 Half Sine Wave 0 25 50 75 100 125 150 Case Temperature (C) T C, Case Temperature (C) Fig 7. Maximum Collector Current vs. Case Temperature 1500 1400 1300 Energy per Pulse (J) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1600 L = 220nH C = 0.4F VCC = 240V L = 220nH C = variable 100C 1400 Energy per Pulse (J) 100C 1200 1100 1000 900 800 700 600 500 400 160 170 180 190 200 1200 1000 800 600 400 200 25C 25C 210 220 230 150 160 170 180 190 200 210 220 230 240 VCE, Collector-to-Emitter Voltage (V) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current 2000 VCC = 240V 1600 Energy per Pulse (J) Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 L = 220nH t = 1s half sine C= 0.4F 100 IC (A) 1200 10 s 100 s 800 C= 0.3F 10 1ms 400 C= 0.2F 1 0 25 50 75 100 125 150 TJ, Temperature (C) 1 10 VCE (V) 100 1000 Fig 11. EPULSE vs. Temperature Fig 12. Forward Bias Safe Operating Area 4 www.irf.com IRGP4086PBF 10000 25 VGE, Gate-to-Source Voltage (V) ID= 25A VDS = 240V VDS = 200V VDS = 150V Cies Capacitance (pF) 1000 20 15 10 100 Coes Cres 10 0 100 200 300 5 0 0 20 40 60 80 100 QG Total Gate Charge (nC) VCE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 1 Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage D = 0.50 Thermal Response ( Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 J J 1 R1 R1 2 R2 R2 R3 R3 C 1 2 3 3 Ri (C/W) (sec) 0.01 Ci= i/Ri Ci= i/Ri 0.084697 0.000038 0.374206 0.001255 0.341867 0.013676 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 5 IRGP4086PBF A RG DRIVER L C PULSE A VCC B PULSE B RG Ipulse DUT tST Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms VCE Energy IC Current 0 L DUT 1K VCC Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off) 6 www.irf.com IRGP4086PBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN T HE AS S EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFPE30 56 135H 57 DAT E CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and Data and specifications subject to change without notice. procedures, which by their nature do not include qualification to This product has been designed for the Industrial market. all possible or even all widely used applications. Without Qualification Standards can be found on IR's Web site. limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/08 www.irf.com 7 |
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