 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATION IN1 IN2 INz3 INPUT IN4 IN5 IN6 IN7 1 2 3 4 5 6 7 8 16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9 DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. OUTPUT FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta = -40 to +85C) GND COM COMMOM Package type 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 10.5k 10k GND The seven circuits share the COM and GND. FUNCTION The M63814P/FP/GP/KP each have seven circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L Ratings -0.5 ~ +35 300 -0.5 ~ +35 300 M63814P M63814FP M63814GP M63814KP 35 1.47 1.00 0.80 0.78 -40 ~ +85 -55 ~ +125 Unit V mA V mA V Input voltage Clamping diode forward current Clamping diode reverse voltage Ta = 25C, when mounted on board Pd Power dissipation W Topr Tstg Operating temperature Storage temperature C C Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Parameter Output voltage M63814P Collector current (Current per 1 cirIC cuit when 7 circuits are coming on simultaneously) M63814GP M63814KP VIN Input voltage M63814FP Duty Cycle no more than 45% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Test conditions Limits min 0 0 0 0 0 0 0 0 0 0 typ -- -- -- -- -- -- -- -- -- -- max 35 250 160 250 130 250 120 250 120 30 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol V (BR) CEO VCE(sat) VIN(on) VF IR hFE Parameter Collector-emitter breakdown voltage Test conditions Limits min 35 -- -- 7.5 -- -- 50 typ -- -- -- 11.0 1.2 -- -- max -- 0.2 0.8 15.0 2.0 10 -- Unit V V V V A -- ICEO = 10A IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA "On" input voltage IIN = 1mA, IC = 10mA Clamping diode forward volltage Clamping diode reverse current DC amplification factor IF = 250mA VR = 35V VCE = 10V, IC = 10mA SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 120 240 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Vo TIMING DIAGRAM 50% Measured device OPEN PG 50 CL OUTPUT RL 50% INPUT OUTPUT 50% 50% ton (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 11V (2)Input-output conditions : RL = 220, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) Input Characteristics 4 Ta = -40C Input current II (mA) 1.5 M63814P 3 Ta = 25C 1.0 M63814FP M63814GP M63814KP 0.744 0.520 0.418 0.406 2 Ta = 85C 0.5 1 0 0 25 50 75 85 100 0 0 5 10 15 20 25 30 Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M63814P) 400 400 Input voltage VI (V) Duty Cycle-Collector Characteristics (M63814P) Collector current Ic (mA) Collector current Ic (mA) 300 1~4 5 6 7 300 1~2 3 4 200 200 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 100 0 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63814FP) 400 400 Duty cycle (%) Duty Cycle-Collector Characteristics (M63814FP) Collector current Ic (mA) Collector current Ic (mA) 300 1~3 4 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 300 1 2 200 200 100 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 3 4 5 6 7 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63814GP/KP) 400 400 Duty Cycle-Collector Characteristics (M63814GP/KP) Collector current Ic (mA) 300 1~2 3 4 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C Collector current Ic (mA) 300 1 2 200 200 100 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 3 4 56 7 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 250 Ta = 25C IB = 2mA IB = 3mA Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 100 Ta = 25C VI = 28V VI = 24V Collector current Ic (mA) Collector current Ic (mA) 200 IB = 1.5mA 80 VI = 20V VI = 16V 150 IB = 1mA 60 VI = 12V VI = 8V 100 IB = 0.5mA 40 20 50 0 0 0.2 0.4 0.6 0.8 0 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Output Saturation Voltage Collector Current Characteristics 100 II = 2mA Output saturation voltage VCE(sat) (V) DC Amplification Factor Collector Current Characteristics 103 7 5 3 2 VCE 10V Ta = 25C Collector current Ic (mA) 80 Ta = -40C Ta = 25C Ta = 85C 60 DC amplification factor hFE 0.20 102 7 5 3 2 40 20 0 0 0.05 0.10 0.15 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA) Output saturation voltage VCE(sat) (V) Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer Characteristics 50 VCE = 4V Grounded Emitter Transfer Characteristics 250 VCE = 4V Ta = 85C Collector current Ic (mA) Collector current Ic (mA) 40 200 150 Ta = 25C 30 Ta = 85C 20 Ta = -40C Ta = 25C 100 50 Ta = -40C 10 0 0 1.0 2.0 3.0 4.0 5.0 0 0 4 8 12 16 20 Input voltage VI (V) Input voltage VI (V) Clamping Diode Characteristics 250 Forward bisa current IF (mA) 200 150 Ta = 85C 100 Ta = 25C Ta = -40C 50 0 0 0.4 0.8 1.2 1.6 2.0 Forward bias voltage VF (V) Jan. 2000 |
Price & Availability of M63814FP
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |