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| MIG100Q6CMB1X MITSUBISHI SEMICONDUCTOR MIG100Q6CMB1X (1200V/100A 6in1) High Power Switching Applications Motor Control Applications * * * * * Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. The electrodes are isolated from case. VCE (sat) = 2.4 V (typ.) UL recognized File No. E87989 Weight: 385 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open V 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. U GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 2004-10-01 1/10 MIG100Q6CMB1X Package Dimensions Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 2/10 MIG100Q6CMB1X Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 3/10 MIG100Q6CMB1X Maximum Ratings (Tj = 25C) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature range Isolation voltage Screw torque (terminal/mounting) AC 1 minute M5 Tc = 25C, DC Tc = 25C, DC Tc = 25C VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current Condition P-N power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Tc Tstg VISO Ratings 900 1200 100 100 960 150 20 20 20 14 -20~+100 -40~+125 2500 3 Unit V V A A W C V V V mA C C V N*m Electrical Characteristics 1. Inverter Stage Characteristic Collector cut-off current Symbol ICEX Test Condition VCE = 1200 V VD = 15 V, IC = 100 A, VIN = 15 V 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min VCC = 600 V, IC = 100 A, VD = 15 V, VIN = 15 V 0 V, Tj = 25C, Inductive load (Note 1) Typ. 2.4 2.2 3.0 0.35 0.3 1.5 0.3 Max 1 10 2.8 V 3.2 2.6 4.0 2.5 s V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) IF = 100 A, Tj = 25C Switching time trr toff tc (off) Note 1: Switching time test circuit and timing chart. 2004-10-01 4/10 MIG100Q6CMB1X 2. Control Stage (Tj = 25C) Characteristic Control circuit current Input-on signal voltage Input-off signal voltage Protection Fault output current Normal Over current protection trip level Short-circuit current protection trip level Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT OTr UV UVr tFO VD = 15 V VD = 15 V VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature Test Condition Min 1.4 2.2 160 160 110 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 51 1.8 2.8 12 mA 0.1 125 12.5 13.0 3 ms A A s C V V Unit mA V 3. Thermal Resistance (Tc = 25C) Characteristic Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FWD Compound is applied Test Condition Min Typ. 0.013 Max 0.130 0.190 C/W Unit C/W 2004-10-01 5/10 MIG100Q6CMB1X Switching Time Test Circuit Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 47 F GND VS P GND U (V, W) VCC VD IF = 16 mA PG 15 V 47 F GND 0.1 F 15 k OUT IN VS N GND Timing Chart Input Pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% 10% tc (off) 10% 10% tc (on) toff ton 2004-10-01 6/10 MIG100Q6CMB1X 4. Recommended conditions for application Characteristic Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (see page.6) (Note 2) Min 13.5 4 Typ. 600 15 Max 800 16.5 20 Unit V V kHz s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG100Q6CMB1X IC - VCE 200 200 IC - VCE IC (A) IC (A) 150 VD = 17 V VD = 15 V VD = 15 V VD = 13 V 150 VD = 17 V Collector current Collector current VD = 13 V 100 100 50 Common emitter Tj = 25C 0 0 1 2 3 4 5 50 Common emitter Tj = 125C 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 10 Switching time - IC ton ton (s) 1 tc (on) tc (off) 0.1 Tj = 25C VCC = 600 V VD = 15 V L-LOAD 0.01 0 20 40 60 80 100 120 (s) toff toff 1 tc (on) tc (off) Switching time Switching time 0.1 Tj = 125C VCC = 600 V VD = 15 V L-LOAD 0.01 0 20 40 60 80 100 120 Collector current IC (A) Collector current IC (A) IF - VF 200 100 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (x10 nS) 50 30 (A) 150 Forward current IF 100 10 trr Irr 5 3 Common cathode : Tj = 25C 1 0 : Tj = 125C 20 40 60 80 100 120 50 Common cathode : Tj = 25C : Tj = 125C 0 0 1 2 3 4 5 Forward voltage VF (V) Forward current IF (A) 2004-10-01 8/10 MIG100Q6CMB1X OC - Tc ID (H) (mA) 300 30 ID (H) - fc OC (A) 250 25 Over current protection trip level 200 High side control circuit current 20 150 15 100 10 50 VD = 15 V 0 0 25 50 75 100 125 150 5 VD = 15 V 0 0 5 10 15 20 25 Case temperature Tc (C) Carrier frequency fc (kHz) ID (L) - fc 100 200 Reverse bias SOA ID (L) (mA) OC Low side control circuit current IC (A) 80 160 60 120 Collector current 40 80 20 VD = 15 V 0 0 5 10 15 20 25 40 Tj < 125C = VD = 15V 0 0 200 400 600 800 1000 1200 1400 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw 10 Rth (t)/(C/W) TC = 25C 1 Transient thermal resistance Diode stage 0.1 Transistor stage 0.01 0.001 0.001 0.01 0.1 1 10 Pulse width tw (s) 2004-10-01 9/10 MIG100Q6CMB1X Turn on loss - IC 100 100 Turn off loss - IC 50 50 Eon (mJ) Turn on loss 5 3 VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 20 40 60 80 100 120 Turn off loss 10 Eoff (mJ) 30 30 10 5 3 VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 20 40 60 80 100 120 1 0 1 0 Collector current IC (A) Collector current IC (A) 2004-10-01 10/10 |
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