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| (R) STPS61170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF(max) FEATURES AND BENEFITS 2 x 30 A 170 V 175 C 0.67 V A1 K A2 High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Low thermal resistance High frequency operation Avalanche specification A2 K A1 TO-247 DESCRIPTION Dual center tab Schottky rectifier suited for High Frequency Switch Mode Power Supply. Packaged in TO-247, this device is intended for use to enhance the reliability of the application. Table 2: Order Code Part Number STPS61170CW Marking STPS61170CW Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt RMS forward current Average forward current Tc = 150 C = 0.5 Per diode Per device tp = 10 ms sinusoidal tp = 1 s Tj = 25 C Parameter Repetitive peak reverse voltage Value 170 80 30 60 500 31800 -65 to + 175 175 10000 Unit V A A A W C C V/s Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage 1 dPtot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j - a ) dTj September 2005 REV. 1 1/5 STPS61170C Table 4: Thermal Parameters Symbol Rth(j-c) Junction to case Rth(c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Parameter Per diode Total Coupling Value 0.9 0.6 0.3 Unit C/W Table 5: Static Electrical Characteristics (per diode) Symbol IR * Tests conditions Tj = 25 C VR = VRRM Reverse leakage current Tj = 125 C Tj = 25 C IF = 30 A Tj = 125 C IF = 30 A Forward voltage drop Tj = 25 C IF = 60 A Tj = 125 C IF = 60 A * tp = 5 ms, < 2% ** tp = 380 s, < 2% Parameter Min. Typ 16 0.63 0.76 VF ** Max. 60 60 0.84 0.67 0.92 0.80 Unit A mA V Pulse test: To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.0043 IF (RMS) 2 Figure 1: Average forward power dissipation versus average forward current (per diode) PF(AV)(W) 30 d=0.05 d=0.1 d=0.2 d=0.5 d=1 Figure 2: Average forward current versus ambient temperature ( = 0.5, per diode) IF(AV)(A) 35 Rth(j-a)=Rth(j-c) 25 30 25 20 20 15 15 Rth(j-a)=15C/W 10 T 10 T 5 IF(AV)(A) 0 0 5 10 15 20 25 30 35 40 5 d=tp/T tp d=tp/T 0 0 25 tp Tamb (C) 50 75 100 125 150 175 Figure 3: Normalized avalanche derating versus pulse duration PARM (t p ) PARM (1s) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM (t p ) PARM (25C) power 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 t p (s) 10 100 1000 Tj (C) 0 25 50 75 100 125 150 2/5 STPS61170C Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) 400 350 300 250 TC=50C Figure 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 d=0.5 0.6 0.5 200 150 100 IM TC=75C 0.4 0.3 0.2 d=0.2 d=0.1 TC=125C T t d =0.5 50 0 1.E-03 0.1 1.E-02 t(s) 1.E-01 1.E+00 Single pulse tP(s) 1.E-02 1.E-01 d=tp/T tp 0.0 1.E-03 1.E+00 Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(A) 1.E+05 Tj=150C Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25C 1.E+04 Tj=125C 1.E+03 Tj=100C 1.E+02 Tj=75C 1000 Tj=50C 1.E+01 Tj=25C 1.E+00 VR(V) 1.E-01 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 VR(V) 100 1 10 100 1000 Figure 9: Forward voltage drop versus forward current (per diode, low level) 30 Figure 10: Forward voltage drop versus forward current (per diode, high level) IFM(A) 1000 IFM(A) Tj=125C (Maximum values) 25 Tj=125C (Maximum values) 20 Tj=125C (Typical values) 100 Tj=125C (Typical values) 15 Tj=25C (Maximum values) Tj=25C (Maximum values) 10 10 5 VFM(V) 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 VFM(V) 3/5 STPS61170C Figure 11: TO-247 Package Mechanical Data DIMENSIONS REF. V Millimeters Min. Typ. Max. Min. 4.85 2.20 0.40 1.00 3.00 2.00 2.00 3.00 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2.00 5 60 3.55 3.65 0.139 3.00 0.078 14.80 0.559 15.75 0.608 20.15 0.781 4.30 0.145 2.40 0.078 3.40 0.118 5.15 0.191 2.60 0.086 0.80 0.015 1.40 0.039 Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143 A D Dia V E F F1 H A F2 F3 F4 G H L5 L L2 L4 F1 V2 F(x3) M G E F2 F3 F4 L3 D L1 L L1 L2 L3 L4 L5 M V V2 Dia. In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 6: Ordering Information Ordering type STPS61170CW Marking STPS61170CW Package TO-247 Weight 4.40 g Base qty 30 Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm. Maximum torque value: 1.0 Nm. Table 7: Revision History Date 16-Sep-2005 Revision 1 First issue. 4/5 Description of Changes STPS61170C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 5/5 |
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