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| SUD50N04-05L New Product Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES ID (A)c 115 102 rDS(on) (W) 0.0054 @ VGS = 10 V 0.0069 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive Such As: - High-Side Switch - Motor Drives - Valve Drives D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD50N04-05L--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 40 "20 115c 81c 100 50 125 136 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb J ti t A bi t Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit _C/W C/W Notes: a. Duty cycle v 1%. b. Surface mounted on 1" FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72786 S-40444--Rev. A, 15-Mar-04 www.vishay.com 1 SUD50N04-05L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 15 A 20 0.0055 80 50 0.0044 0.0054 0.0083 0.0130 0.0069 S W 40 1 3 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 20 V, RL = 0.4 W ID ] 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 20 V, VGS = 10 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 5600 590 365 90 19 19 1.6 15 20 65 11 25 30 100 20 ns W 135 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = 30 A, VGS = 0 V IF = 30 A, di/dt = 100 A/ms 0.90 30 50 100 1.50 45 A V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72786 S-40444--Rev. A, 15-Mar-04 SUD50N04-05L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10 thru 5 V 100 I D - Drain Current (A) 80 60 40 20 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 4V 100 I D - Drain Current (A) 80 60 40 20 0 0.0 120 Vishay Siliconix Transfer Characteristics TC = 125_C 25_C 3V -55_C 3.0 3.5 4.0 4.5 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C 25_C r DS(on) - On-Resistance ( ) 160 g fs - Transconductance (S) 0.008 0.010 On-Resistance vs. Drain Current 120 125_C 0.006 VGS = 4.5 V VGS = 10 V 80 0.004 40 0.002 0 0 10 20 30 40 50 60 VGS - Gate-to-Source Voltage (V) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 Crss 8 16 24 32 40 Coss Ciss V GS - Gate-to-Source Voltage (V) 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) 10 VDS = 20 V ID = 50 A Capacitance Gate Charge 8 C - Capacitance (pF) 6 4 2 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72786 S-40444--Rev. A, 15-Mar-04 www.vishay.com 3 SUD50N04-05L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.7 rDS(on) - On-Resiistance (Normalized) TJ = 150_C TJ = 25_C 10 1.4 1.1 0.8 0.5 -50 -25 0 25 50 75 100 125 150 175 1 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 125 Safe Operating Area 200 100 Limited by rDS(on) 10 ms 100 ms 100 I D - Drain Current (A) I D - Drain Current (A) 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 50 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) 75 10 50 Limited By Package 25 0 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 www.vishay.com 4 Document Number: 72786 S-40444--Rev. A, 15-Mar-04 |
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